SD103AWS - SD103CWS
SCHOTTKY BARRIER SWITCHING DIODE
Features
·Low Forward Voltage Drop
·Guard Ring Construction for
Transient Protection
·Negligible Reverse Recovery Time
·Low Reverse Capacitance
·Ultra-Small Surface Mount Package
·Case: SOD-323, Plastic
·Polarity: Cathode Band
·Leads: Solderable per MIL-STD-202,
Method 208
·SD103AWS Marking: S4
·SD103BWS Marking: S5 or S4
·SD103CWS Marking: S6 or S5 or S4
·Weight: 0.004 grams (approx.)
Mechanical Data
Maximum Ratings @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Test period <3000ms.
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol SD103AWS SD103BWS SD103CWS Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 30 20 V
RMS Reverse Voltage VR(RMS) 28 21 14 V
Forward Continuous Current (Note 1) IFM 350 mA
Non-Repetitive Peak Forward Surge Current @ t £1.0s IFSM 1.5 A
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +125 °C
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 2) SD103AWS
SD103BWS
SD103CWS
V(BR)R
40
30
20
¾¾ V
IR= 10mA
IR= 10mA
IR= 10mA
Forward Voltage Drop VFM ¾¾
0.37
0.60 VIF= 20mA
IF= 200mA
Peak Reverse Current SD103AWS
SD103BWS
SD103CWS
IRM ¾¾5.0 mA
VR= 30V
VR= 20V
VR= 10V
Junction Capacitance Cj¾50 ¾pF VR= 0V, f = 1.0MHz
Reverse Recovery Time trr ¾10 ¾ns IF= IR= 200mA,
Irr = 0.1 x IR,R
L= 100W
A B
C
DE
G
H
J
SOD-323
Dim Min Max
A2.30 2.70
B1.60 1.80
C1.20 1.40
D1.05 Typical
E0.25 0.35
G0.20 0.40
H0.10 0.15
J0.05 Typical
All Dimensions in mm
SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
• World Wid e We b Site - http: //www.se nsitro n.c om • E-Mail Address - sales@sensitr on. com •
Data Sheet 2922, Rev. -
1.0
10
100
1000
0.10
0.01
0 0.5 1.0
I,F
O
RWARD CURRENT (mA)
F
V , FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
R
Fi
g
.2 T
y
p. Junction Capacitance vs Reverse Volta
g
e
100
0.1
1.0
10
010203040
SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
• World Wid e We b Site - http: //www.se nsitro n.c om • E-Mail Address - sales@sensitr on. com •
SCHOTTKY BARRIER SWITCHING DIODE
SD103AWS - SD103CWS
Data Sheet 2922, Rev. -
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
