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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FFP08S60SN 8 A, 600 V STEALTHTM II Diode Features Description * Stealth Recovery trr = 25 ns (@ IF = 8 A) The FFP08S60SN is a STEALTHTM II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. * Max Forward Voltage, VF = 3.4 V (@ TC = 25C) This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * 600 V Reverse Voltage and High Reliability * Improved dv/dt Capability * RoHS Compliant Applications * General Purpose * SMPS, Power Switching Circuits * Boost Diode in Continuous Mode Power Factor Corrections TO-220-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Rating 600 Unit V VRWM VR Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 IF(AV) Average Rectified Forward Current V 8 IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave A 60 A TJ, TSTG Operating and Storage Temperature Range @ TC = 89oC o -65 to +175 C Thermal Characteristics Symbol RJC Parameter Max. Maximum Thermal Resistance, Junction to Case 3.6 Unit o C/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFP08S60SNTU FFP08S60SN TO-220-2L Tube N/A N/A 50 (c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. C2 1 www.fairchildsemi.com FFP08S60SN -- STEALTHTM II Diode November 2014 Symbol Min. Typ. Max. Unit VFM1 IF = 8 A IF = 8 A Parameter TC = 25oC TC = 125oC - 2.7 2.1 3.4 - V IRM1 VR = 600 V VR = 600 V TC = 25oC TC = 125oC - - 100 500 A trr IF = 1 A, diF/dt = 100 A/s, VR = 30 V TC = 25oC - 13 - ns trr Irr S factor Qrr IF = 8 A, diF/dt = 200 A/s, VR = 390 V TC = 25oC - 15 2.5 0.4 19 25 - ns A - 32 3.8 0.7 62 - nC 10 - - mJ trr Irr S factor Qrr IF = 8 A, diF/dt = 200 A/s, VR = 390 V WAVL Avalanche Energy ( L = 40 mH) TC = 125oC nC ns A Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform (c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. C2 2 www.fairchildsemi.com FFP08S60SN -- STEALTHTM II Diode Electrical Characteristics TC = 25oC unless otherwise noted Figure 4. Typical Reverse Current vs. Reverse Voltage Figure 3. Typical Forward Voltage Drop vs. Forward Current 20 40 10 10 o TC = 125 C TC = 125 C Reverse Current , IR [A] Forward Current, IF [A] o o TC = 75 C 1 o TC = 25 C 0 1 2 3 4 Forward Voltage, VF [V] 5 Figure 5.Typical Junction Capacitance 50 0.1 Reverse Recovery Time, trr [ns] 30 20 10 1 10 Reverse Voltage, VR [V] 0.001 200 300 400 Reverse Voltage, VR [V] 500 600 IF = 8A o TC = 125 C o TC = 75 C 20 o TC = 25 C 200 300 400 diF/dt [A/s] 500 600 Figure 8. Forward Current Derating Curve 10 Average Forward Current, IF(AV) [A] 15 8 o TC = 125 C 4 o TC = 75 C o TC = 25 C 2 0 100 100 30 10 100 100 Figure 7. Typical Reverse Recovery Current vs. diF/dt 6 10 40 Typical Capacitance at 0V = 43 pF 0 0.1 o TC = 25 C Figure 6. Typical Reverse Recovery Time vs. diF/dt 40 Capacitances , Cj [pF] o TC = 75 C 0.01 0.1 Reverse Recovery Current, Irr [A] 1 IF = 8A 200 300 400 diF/dt [A/s] (c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. C2 500 10 5 0 25 600 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFP08S60SN -- STEALTHTM II Diode Typical Performance Characteristics FFP08S60SN -- STEALTHTM II Diode Mechanical Dimensions Figure 9. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2. (c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. C2 4 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 (c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. C2 5 www.fairchildsemi.com FFP08S60SN -- STEALTHTM II Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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