BYY57 / BYY58
35A Silicon Power Rectifier Diode
Part no.
Issue 4 – September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
Description
The BYY57/58 are hermetically sealed 35A-
diodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
Forward current 35A
Reverse voltage 75V – 1500V
Hermetic press-fit package
Available in different modifications of the
package
Applications
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
BYY57: 1 – cathode; 2 - anode
BYY58: 1 – anode; 2 - cathode
Typical application circuit
Six pulse
bridge
connection
~ ~ ~
3 x BYY57-1200
3 x BYY58-1200
+
-
Ordering information
Device
Quantity per box
BYY57-75; …; BYY57-1500
500
BYY58-75; …; BYY58-1500
500
Device marking
Devices are identified by type. Colour of marking: BYY57- black, BYY58 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57………………………………... diode type
400………………………………….. repetitive peak reverse voltage VRRM (in V) 400
1
2
BYY57 / BYY58
Issue 4 – September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
Repetitive
peak
reverse
voltage
BYY57-75
BYY58-75
VRRM
75
V
Tc = 150°C
BYY57-100
BYY58-100
100
BYY57-150
BYY58-150
150
BYY57-200
BYY58-200
200
BYY57-300
BYY58-300
300
BYY57-400
BYY58-400
400
BYY57-500
BYY58-500
500
BYY57-600
BYY58-600
600
BYY57-700
BYY58-700
700
BYY57-800
BYY58-800
800
BYY57-900
BYY58-900
900
BYY57-1000
BYY58-1000
1000
BYY57-1100
BYY58-1100
1100
BYY57-1200
BYY58-1200
1200
BYY57-1300
BYY58-1300
1300
BYY57-1400
BYY58-1400
1400
BYY57-1500
BYY58-1500
1500
Forward current, arithmetic value
IFAV
35
A
Surge forward current
IFSM
600
A
half-sine wave,
10 ms
500
TJ = 175°C half-sine
wave, 10 ms
Maximum rated value
i²dt
1800
A²s
half-sine wave,
10 ms
1250
TJ = 175°C half-sine
wave, 10 ms
Repetitive peak forward current
IFRM=*IFAV
110
A
f = >15 Hz
Effective forward current
IFRMS
55
A
Junction temperature
TJmax
200
°C
Storage temperature range
Tstg
- 50 to + 175
°C
BYY57 / BYY58
Issue 4 – September 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to case
RθJC
1.0
°C/W
Thermal characteristics
Forward current derating diagram
200°C
168°C
0
5
10
15
20
25
30
35
40
-50 0 50 100 150 200 250
TC (°C)
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Forward voltage characteristic
0
5
10
15
20
25
30
35
40
0,75 0,8 0,85 0,9 0,95 1 1,05
VF (V)
IF (A)
BYY57 / BYY58
Issue 4 – September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test contitions
Forward
voltage
BYY57-75...1200
BYY58-75...1200
VF
-
1.0
1.1
V
IF = 35 A,
measuring time
10ms (half-sine
wave)
BYY57-1300...1500
BYY58-1300...1500
-
1.03
1.15
Forward
voltage
(information
values)
BYY57-75...1200
BYY58-75...1200
VF
-
0.82
-
V
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°C
BYY57-1300...1500
BYY58-1300...1500
-
0.85
-
BYY57-75...1200
BYY58-75...1200
VF
-
-
1.2
V
IF = 50 A
BYY57-1300...1500
BYY58-1300...1500
-
-
1.25
Reverse
current
BYY57-75...150
BYY58-75...150
IRRM
-
-
3
mA
TJ = 150°C, at
VRRM
BYY57-200...1500
BYY58-200...1500
-
-
1.5
BYY57-75...400
BYY58-75...400
IRRM
-
-
0.25
mA
at VRRM
BYY57-500...1500
BYY58-500...1500
-
-
0.1
Threshold voltage (information
value)
V(FO)
-
0.66
-
V
TJ = 175°C
Slope resistance (information
value)
rF
-
5.75
-
mΩ
TJ = 175°C
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test contitions
1
Forward voltage
difference in one
category of forward
voltage
ΔVF
-
-
0.05
V
IF = 35 A, measuring
time 10ms (half-sine
wave)
2
Reverse current in one
category of forward
voltage (only for
BYY57-300…1500 and
BYY58-300…1500)
IR
-
-
0.01
mA
at VRRM
BYY57 / BYY58
Issue 4 – September 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
Millimeters
Inches
MIN
TYP
MAX
MIN
TYP
MAX
A
15,00
15,50
16,00
0,591
0,610
0,630
A1
5,90
6,10
6,30
0,232
0,240
0,248
A2
2,10
2,30
2,50
0,083
0,091
0,098
b
3,10
3,40
3,70
0,122
0,134
0,146
D
15,50
15,70
15,90
0,610
0,618
0,626
D1
12,75
12,80
12,85
0,502
0,504
0,506
D2
12,30
12,50
12,70
0,484
0,492
0,500
L
3,00
3,50
4,00
0,118
0,138
0,157
Europe
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USA
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Zetex Semiconductors plc
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United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
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