SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
COMPLEMENTARY TYPE – BCX5316
PARTMARKING DETAIL – BL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage V(BR)CBO 100 V IC =100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 80 V IC =10mA
Emitter-Base Breakdown
Voltage V(BR)EBO 5V
IE =10µA
Collector Cut-Off Current ICBO 0.1
20 µA
µAVCB =30V
VCB =30V, Tamb
=150°C
Emitter Cut-Off Current IEBO 20 nA VEB =4V
Collector-Emitter
Saturation Voltage VCE(sat) 0.5 V IC =500mA, IB =50mA*
Base-Emitter Turn-On
Voltage VBE(on) 1.0 V IC =500mA, VCE =2V*
Static Forward Current
Transfer Ratio hFE 25
100
25 250 IC =5mA, VCE =2V*
IC =150mA, VCE =2V*
IC =500mA, VCE =2V*
Transition Frequency fT150 MHz IC =50mA, VCE =10V,
f=100MHz
Output Capacitance Cobo 15 pF VCB =10V, f=1MHz
*Measured under pulsed conditions.
BCX5616
C
C
B
E
SOT89
TBA
