2N6027 2N6028 2N6116 2N6117 XN y 2N6118 @ Bnew ENGLAND SEMICONDUCTOR es . ; Programmable Programmable Unijunction Transistors (PUTs) are complementary Unijunction Silicon Controlled Rectifiers (SCRs) with a PNPN structure. Transistors SCR PUT | anode | anode Gate P P Gate TO-18 N N P P 4.209 " sao) PT [ama | cathode vet r a 218 ova G g Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors .. designed to enable the engineer to program unijunction characteristics such as R,,, 1), |, and |, by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Sup- plied in TO-18 package or in chip form. Programmable -- R,,, n, ly and |, Low On-State Voltage -- 1.5 volts Maximum @ |, = 50 mA Low Gate to Anode Leakage Current -- 10 nA Maximum High Peak Output Voltage -- 11 Volts Typical Low Offset Voltage -- 0.35 Volt Typical (R, = 10 k ohms) 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-332 REV: NEW ENGLAND SEMICONDUCTOR CHIP SPECIFICATION fos CAT f , ~~. 4 , ANODE | ho BACES ICE: = HODE y i t ve i a aa GRIME GEOHETRY DIE SIZE Z2OX26HIL5 ANODE 4X4 MILD CATHODE 3X3 HILS HETALLIZATION TOP Al BACK Ail Programmable Unijunction Transistors PUT PEAK POINT Similar to UJTs, except . that l\y, Ip and intrinsic s standoff voltage are Vak VALLEY POINT programmable (adjust- VF yah abla) by means of external Vy ] voltage divider. This stabi- lizes circuil performance laao A Pp WwW if for variations in device (0,0) lA parameters. General operating frequency range is from 0.01 Hz to 10 kHz, making them suitable for long-duration timer circuits. PROGRAMMABLE UNIJUNCTION TRANSISTORS B? < A a . R2 gRr Ro Reg = Al+ R2 a G S n= Ri 1 j Al+ A? R R : cc = F ; K Kk 61 i : Equivalent Circuit . : Circuit Symbol with External Program? Typical Application Resistors Al and AZ? Maximum Ratings Device P, LF Lsw Voxs Vawr Vian Vaan Vue Tara Top types T, = +25C Peak 2/ a 1 WwW mAi(nms) | Ade Vde | Vde Vide Vde | Vide "C C 2N6116 300 300 5 40 5 40 40 40 65 -55 2N6117 300 300 5 40 5 40 40 40 to to 2N6118 300 300 5 40 5 40 40 40 #150 | +125 2N6137 200 300 5 40 5 40 40 40 2N602T 300 150 5 40 5 40 40 40 2N6028 200 150 5 40 5 40 40 40 1/ Derate linearly 2.5 mW/C for T, above +25C 2/ 10 ys, square wave, 1 percent duty cycle 3/ Anode shorted to gate NEW ENGLAND SEMICONDUCTOR 6 Lake Street Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0303 T4-4.8-860-332 REV: --