G E SOLID STATE 01 De Bsa7sos, oor7yan a 3875081 GE SOLID STATE | General-Purpose Power Transistors RCA9166A, RCA9166B, MJ15022, MJ15024 Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged Devices, Broadly Applicable For Industrial and Commercial Use Features; High dissipation capability Maximum safe-area-of-operation curves 8 High voltage High gain at high current Applications: High-fidelity amplifiers Series and shunt regulators 6 Linear/power ampliliers The RCA9166A*, RCA9166B*, MJ15022, and MJ15024 are ballasted multiple-epitaxial silicon n-p-n transistors fea- turing high gain at high current and high voltage. They differ from each other in voltage ratings, safe-operating- area (SOA) ratings, and the currents at which the parameters are controlled, All these types are supplied in the JEDEG TO-204AA steel hermetic package. Formerly RCA Dev. Type Nos. TA9166A and TA9166B, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: Voposeaee Cree berereceerees Vcen(sus) Ree = 100 0 Vceo(SUus)} ..+6 . Derate linearly At distance = 1/32 in. (0.8 mm) from seating plane for 10s max. 490 17486 Dd T-331S5 File Number 1293 TERMINAL DESIGNATIONS c (FLANGE) EN 97058-27516 JEDEC TO-204AA RCA9166A RCA9IG66B MJ15024 MJ15022 - - 400 350 v 275 225 275 225 v 250 200 260 200 Vv v 16 A 30 _ A 5 _____ A 250 WwW 1.43 WO ~65 to 200 C 230 C G E SOLID STATE O1 DE J za7soa1 go174a? 3 i 3875081 G E SOLID STATE ote i74a7, 0 T73S3-1S venerar-rurpose rower Transistors RCAS166A, RCA9166B, MJ15022, MJ15024 ELECTRICAL CHARACTERISTICS, at Case Temperature (TC)=25C Unless Otherwise Specified TEST CONDITION LIMITS CUR- . CHARAC- VOLTAGE| RENT |RCAS166A/ACA9166B| MJ15024 | MJ15022 UNITS TERISTIC V de Adc VoelVBE| Ic | Min.) Max. Min. | Max, |MIn.} Max. |Min.} Max. loBo 4008 /|-|/-~|f--J-[| 14-7) - 3508 -j-|-ft-y}r-f-t-]1 IcEO 200 -|}1/-]]-Jos]{- 150 -}-|-]1[_~} -7}fos 400 |-1.5 -|-fffrpos;,os] ma IcEX 250 |-1.5 fohomlo~m |] myo; ] 200 j-1.5 --[L-|-|[-]-j -|- |025 ICER ReaE=100 Q, | 200 -|4f-]J-]y~-] 4]7-d]- To=150C 150 ~|-j--|]4/|-]-]4 4 ge 30 ~ | 30} Jom] r-l-jt- hee 4 g 20; | 2; -7-fri-j- 4 ge -}--|] ] 715} 60 | 15 | 60 4 16 732}; }32/-]5}, |, 5] VcEo(sus) 0.1 | 250; | 200] 250] |200] Voer(sus)b Rige=100 0 0.1 | 275) | 225| fa7s| feast VEBO lte=1 mA 5 _ 5 -!l-|J-ijn-t lE=0.5mAl -|/-}-j-/[5);-]5] 4 3e _ 2 _- 2 -J}rlrtis VBE 4 ec |~| ~|]]lo2}]oe2} Voe(sat) Ip=0.3 A 3 j){10/ ]10;/] f-] ip=0.8A | so | ~| ~}||}J] 44] j 164 1p=3.2 A we |] -~} ]|]J]] 4 ]] 4 IS/p tp=0.5 5 50 3//3/j2];/]J2]- A nonrep, 50 -!|!-}-|I- 5 - 5 _ Intel f=t MHz 10 1 4 20 4 20 4 20 4 20 fr 10 1 4 20 4 20 4 20 4 20 | MHz Cob 0a |500| |500 | | 500 |] |500| pF Resc 10 10 [O07 , 10.7 7- |] 0.7 | | 07 | C *VcB- bCAUTION: Sustaining voltages VcER(sus) and VCEQ(sus) MUST NOT be measured onacurve tracer. CPulsed; pulse duration=300 ys, duty factor=1.8%. . 491 E SOLID STATE 01 de Pss7sos, corzyaa s 3875081 GE SOLID STATE , 01E 17488 oT 3S75 General-Purpose Power Iransistors RCA9166A, RCA9166B, MJ15022, MJ15024 | CASE TEMPERATURE Te }= 25C (CURVES MUST 8E DERATED S| LINEARLY WITH INCREASE 0 COLLECTOR CURRENT (I }A Voeg ( MAX.) = 200 V ( RCASIE6B, MJ15022 Ili Voeo ( MAX.) * 250 V(RCASIG6A,MUI5 024) a TECHS a 1 2 4 8 810 2 4 6 AQ 2 4 6 Bi900 COLLECTOR-TO-EMITTER VOLTAGE (VcE)V 92CM-33704 Fig. 1 - Maximum operating areas for all types. oo ' Cy) 22LS~1469AI COLLECTOR CURRENT (I)~A 9205-33705 Fig. 2 - Current derating curve for all types. Fig. 3 - Typical de beta characteristics as a function of collector current for all types. VOLTAGE Weel = tov 210 TEMPERATURE (To) + 25C 2 = 4 = Zz 8 3 3 z 3 4 "0 COLLECTOR CURRENT (Tol-A COLLECTOR CURRENT (10)-A oo. a, te 9265-33709 Fig. 4 - Typlieal gain-bandwidth produet for all Fig. 5 - Typical saturation voltage character- types. istics for all types. G E SOLID STATE 01 pe Bsersoar coisas? f 3875081 GE SOLID STATE O1E 17489 uacnerarrunvse rower Transistors BASE CURRENT (191-4 Fig. IMON-BASE INPUT CAPACITANCE (Cibl=pF OR COMMON-BASE OUTPUT CAPACITANCE (Co,)-aF Fig. > Fssis at RCA9166A, RCA9166B, MJ15022, MJ15024 MITTER VOLTAGE (Voce) 2 a 4 a] 22 2.6 3 BASE~TO-EMITTER VOLTAGE (Veeh- 34 36 9209-33706 6 - Typical Input characteristics for alt types. BASE - YO-COLLECTOR VOLTAGE (Vgc) -Vv OA BASE-TO-EMITTER VOLTAGE (Vor}-V 9205-35708 8 - Typical common-base input or output capacitance characteristics as a function af reverse voltages for alf types. COLLEGTOR~T0-EMITIER VOLTAGE t 2 a z g t x S 5 a 3 2 3 yay BASE-TO-EMITTER VOLTAGE Wael -v S2C5-33710 Fig. 7 - Typical transfer characteristics. COLLECTOR CURRENT (Iga COLLECTOR-T0-EMI HOTE The soatasteg Velteges cxceplatle when the teoce fellate Voeo (sush Tg Veer (sus) OR Veex (sue) { Ve CE ITTER VOLTAGE (Voe}-V Ceol), YoeRtws) or, Vceytavs) we sgt ond above point "A. (For values of cutrest ond salrage. see Elecincat Cheractariaticn. 92e5-159724R1 Fig. 9 - Oscilloscope display for maasurament of sustaining voltages. (Test circuit shown in Fig. 10). CLARE MERCURY RELAY MODEL NO. HGP-1045 OR EQUIVALENT 270,2W WY 6 SERIES-CONNECTED v.W MILLER NO. 288), OR EQUIVALENT loa, Voer(eus) Preexon OSCILLOSCOPE (INPUT HORIZ. (INVERT) GND + oO 0 T0 SOV {500 mA) Veeo (sus) o L2imH FOR Vceg(sus) ANDO Voer (sus) L* 7mH FOR Voey (sua) R100a 9208-33703 Fig. 10 - Circuit used io measure sustaining voltages Vogeo(sus), VoerR(sus), and Voex(sus) for all types. 493