SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103 Silicon Transistor a GG 2N5225 The General Electric 2N5225 is a Silicon NPN Planar Epi- taxial Passivated Transistor designed for general purpose amp- lifier applications. absolute maximum ratings: (Ta = 25C unless otherwise specified) Voltages Collector to Emitter Vero 25 Collector to Base Vcespo 25 Emitter to Base VeEBO 4 Current Collector Ic 200 Dissipation Total Power Ty <25C Pr 350 Derating Factor Ta > 25C Py 2.8 Total Power Te < 25C Py 1.0 Derating Factor Tc > 25C Py 8.0 Temperature Operating Ty Storage Tstg -55 to +150 Lead (1/16 + 1/32 from case for 10 sec.) TL -55 to +150 260 3. COLLECTOR 2. BASE Volts TO-92 |.EMITTER Volts Volts 407| 482[016/019/ 3 mA mW mW/C Watt mWw/C NOTES: 1. THREE LEADS C 2.CONTOUR oF PACKAGE UNCONTROLLED OUTSIDE THIS . c 3. (THREE LEADS) $b2 APPLIES BETWEEN Ly AND Lo. @b APPLIES BETWEEN Lo AND 12.70 MM (.500") Cc FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED IN L, AND BEYOND 12.70MM(.500") FROM SEATING PLANE. electrical characteristics: (T, = 25C unless otherwise specified) Static Characteristics Collector-Emitter Breakdown Voltage (Ic = 10 mA, Ip = 0) Collector-Base Breakdown Voltage (Ic = 100 uA, Ig = 0) Emitter-Base Breakdown Voltage (lg = 100 nA, Ic = 0) Collector Cutoff Current (Vcr = 15V, Ig 5 0) Emitter Cutoff Current (Ver = 4.0V, Ic = 0) DC Current Gain (Ic = 10 mA, VcE = 10V) (ic = 50 mA, Vcr = 10V) Collector-Emitter Saturation Voltage (Ic = 100mA, Ip = 10 mA) Base-Emitter Saturation Voltage (Ic = 100 mA, Ip = 10 mA) Dynamic Characteristics Current-Gain Bandwidth Product (Ic = 20 mA, Vor = 10V, f = 20 MHz) Collector-Base Capacitance (Vcg = 5.0V, Ig = 0, f = 1.0 MHz) Small Signal Current Gain (ic = 50mA, Veg = 10V, f = 1.0 kHz) +Pulse Test: Pulse width = 300us, duty cycle = 2%. SYMBOL MIN. MAX. UNITS TV (BR)CEO 25 _ Volts VBR)CBO 25 _ Volts V@prR)EBO 4.0 - Volts IcBo - 300 nA TeBo 500 nA Thre 25 _ thre 30 600 TVcE(sat) = 0.8 Volts TVpE(sat) _ 1.0 Volts fr SO MHz Cob - 20 pF le 30 1800 471 *Indicates JEDEC Registered Data.