AP6950GYT-HF Halogen-Free Product Advanced Power Electronics Corp. Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 Simple Drive Requirement Easy for Synchronous Buck CH-1 G1 Converter Application RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description S2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The control MOSFET (CH-1) and synchronous MOSFET (CH-2) co-package for synchronous buck converters. BVDSS 30V RDS(ON) 18m ID BVDSS RDS(ON) ID 21A 30V 10.5m 39A G2 S2 S2 S2 G2 S2 S2 S2 S1/D2 D1 G1 D1 D1 D1 G1 D1 D1 D1 (R) PMPAK 3 x 3 Absolute Maximum Ratings Symbol Parameter Units Rating CH-1 CH-2 VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage +20 +12 V ID@TC=25 Continuous Drain Current (Chip Limited) ID@TA=25 ID@TA=70 IDM 21 39 A Continuous Drain Current 3 8.3 11.8 A Continuous Drain Current 3 6.6 9.5 A 40 40 A 1.9 2.2 W Pulsed Drain Current 1 3 PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rating Parameter CH-1 CH-2 Units Rthj-c Maximum Thermal Resistance, Junction-case 10 5 /W Rthj-a 3 Maximum Thermal Resistance, Junction-ambient 65 55 /W Rthj-a Maximum Thermal Resistance, Junction-ambient4 180 145 /W Data & specifications subject to change without notice 1 201204125 AP6950GYT-HF o CH-1 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=8A - 14 18 m VGS=4.5V, ID=5A - 23.2 30 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance VDS=10V, ID=8A - 14 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=8A - 4.2 6.7 nC Qgs Gate-Source Charge VDS=15V - 1.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC td(on) Turn-on Delay Time VDS=15V - 6.5 - ns tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3 - 15 - ns tf Fall Time VGS=10V - 3 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=15V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Min. Typ. IS=8A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=8A, VGS=0V, - 13 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 6 - nC 2 AP6950GYT-HF o CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=11A - 8 10.5 m VGS=4.5V, ID=7A - 13.3 16.5 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V gfs Forward Transconductance VDS=10V, ID=11A - 20 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=11A - 7.5 12 nC Qgs Gate-Source Charge VDS=15V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC td(on) Turn-on Delay Time VDS=15V - 9 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3 - 20 - ns tf Fall Time VGS=10V - 4 - ns Ciss Input Capacitance VGS=0V - 970 1550 pF Coss Output Capacitance VDS=15V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Min. Typ. IS=11A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=11A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec. 4.Surface mounted on min. copper pad of FR4 board, on steady-state THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP6950GYT-HF Channel-1 40 40 10V 7.0V 6.0V 5.0V V G = 4.0V 30 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C ID , Drain Current (A) ID , Drain Current (A) T A =25 o C 20 10 30 20 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 30 I D =8A V G =10V I D =5A T A =25 o C Normalized RDS(ON) RDS(ON) (m) 26 22 18 1.6 1.2 0.8 14 0.4 10 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 I D =250uA 1.6 Normalized VGS(th) IS(A) 6 T j =25 o C T j =150 o C 4 1.2 0.8 2 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP6950GYT-HF Channel-1 10 500 8 C iss 400 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 600 I D =8A V DS =15V 6 300 4 200 2 100 C oss C rss 0 0 0 2 4 6 1 8 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Duty factor = 0.5 Normalized Thermal Response (Rthja) Operation in this area limited by RDS(ON) 10 ID (A) 100us 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=180 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 ID , Drain Current (A) V DS =5V VG 30 QG 4.5V 20 QGS QGD 10 T j =150 o C o T j =25 C Charge o T j =-40 C Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP6950GYT-HF Channel-2 60 60 10V 7.0V 6.0V 5.0V V G =4.0V ID , Drain Current (A) 50 40 10V 7.0V 6.0V 5.0V V G =4.0V o T A =150 C 50 ID , Drain Current (A) T A =25 o C 30 20 10 40 30 20 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 18 I D =11A V G =10V I D =7A T A =25 o C Normalized RDS(ON) RDS(ON) (m) 16 14 12 1.6 1.2 0.8 10 0.4 8 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 12 I D =250uA 10 Normalized VGS(th) 1.6 IS(A) 8 T j =25 o C T j =150 o C 6 4 1.2 0.8 0.4 2 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP6950GYT-HF Channel-2 10 1000 8 C iss 800 6 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 1200 I D =11A V DS =15V 600 4 400 2 200 C oss C rss 0 0 0 4 8 12 1 16 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor = 0.5 Operation in this area limited by RDS(ON) 10 ID (A) 100us 1ms 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x R thja + T a Rthja=145 oC/W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 VG V DS =5V ID , Drain Current (A) 50 QG 40 4.5V 30 QGS QGD 20 T j =150 o C 10 T j =25 o C Charge o T j =-40 C 0 0 1 2 3 4 5 Q 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7