Advanced Power Dual N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement CH-1 BVDSS 30V
▼ Easy for Synchronous Buck RDS(ON) 18mΩ
Converter Application ID21A
▼ RoHS Compliant & Halogen-Free CH-2 BVDSS 30V
RDS(ON) 10.5mΩ
Description ID39A
Absolute Maximum Ratings
Symbol Parameter Units
CH-2
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +12 V
ID@TC=25℃Continuous Drain Current (Chip Limited) 39 A
ID@TA=25℃Continuous Drain Current311.8 A
ID@TA=70℃Continuous Drain Current39.5 A
IDM Pulsed Drain Current140 A
PD@TA=25℃Total Power Dissipation32.2 W
TSTG Storage Temperature Range ℃
TJOperating Junction Temperature Range ℃
CH-2
Rthj-c 5 ℃/W
Rthj-a 55 ℃/W
Rthj-a 145 ℃/W
Data & specifications subject to change without notice
-55 to 150
1.9
40
30
Maximum Thermal Resistance, Junction-ambient3
10
65
180
Thermal Data
201204125
Symbol CH-1
Rating UnitsParameter
1
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient4
-55 to 150
+20
AP6950GYT-HF
21
8.3
6.6
Rating
CH-1
Halogen-Free Product
A
dvanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G1
G2
D1
D2/S1
S2
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
G2S2S2
S2
G1
D1
D1
D1 PMPAK® 3 x 3
G2 S2 S2 S2
G1 D1 D1 D1
D1
S1/D2
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - 14 18 mΩ
VGS=4.5V, ID=5A - 23.2 30 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V
gfs Forward Transconductance VDS=10V, ID=8A - 14 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=8A - 4.2 6.7 nC
Qgs Gate-Source Charge VDS=15V - 1.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 - nC
td(on) Turn-on Delay Time VDS=15V - 6.5 - ns
trRise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω-15-ns
tfFall Time VGS=10V - 3 - ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=15V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
RgGate Resistance f=1.0MHz - 1.2 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=8A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=8A, VGS=0V, - 13 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC
2
AP6950GYT-HF
AP6950GYT-HF
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=11A - 8 10.5 mΩ
VGS=4.5V, ID=7A - 13.3 16.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V
gfs Forward Transconductance VDS=10V, ID=11A - 20 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=11A - 7.5 12 nC
Qgs Gate-Source Charge VDS=15V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC
td(on) Turn-on Delay Time VDS=15V - 9 - ns
trRise Time ID=1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω-20-ns
tfFall Time VGS=10V - 4 - ns
Ciss Input Capacitance VGS=0V - 970 1550 pF
Coss Output Capacitance VDS=15V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF
RgGate Resistance f=1.0MHz - 1.2 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=11A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=11A, VGS=0V, - 16 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec.
4.Surface mounted on min. copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
A
P6950GYT-HF
Channel-1
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
4
0
10
20
30
40
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
10
20
30
40
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
10
14
18
22
26
30
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=5A
TA=25oC
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
ID=250uA
AP6950GYT-HF
Channel-1
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
5
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TA=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=180oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
02468
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=8A
VDS =15V
0
100
200
300
400
500
600
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
Operation in this
area limited by
RDS(ON)
0
10
20
30
40
0123456
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oC
Tj=25oC
VDS =5V
Tj=-40oC
A
P6950GYT-HF
Channel-2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
6
0
10
20
30
40
50
60
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
6.0V
5.0V
VG=4.0V
0
10
20
30
40
50
60
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
6.0V
5.0V
VG=4.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=11A
VG=10V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
8
10
12
14
16
18
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=7A
TA=25oC
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
ID=250uA
AP6950GYT-HF
Channel-2
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
7
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TA=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=145oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
0481216
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=11A
VDS =15V
0
200
400
600
800
1000
1200
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
Operation in this area
limited by RDS(ON)
0
10
20
30
40
50
60
0123456
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oC
Tj=25oC
VDS =5V
Tj=-40oC
