© 2006 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0623
DSS 60-0045B
IFAV =60A
VRRM =45V
VF= 0.57 V
Symbol Conditions Maximum Ratings
IFRMS 70 A
IFAV TC = 100°C; rectangular, d = 0.5 60 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 600 A
EAS IAS = 20 A; L = 180 µH; TVJ = 25°C; non repetitive 57 mJ
IAR VA =1.5·VRRM typ.; f = 10 kHz; repetitive 2 A
(dv/dt)cr 1000 V/µs
TVJ -55...+150 °C
TVJM 150 °C
Tstg -55...+150 °C
Ptot TC = 25°C 155 W
Mdmounting torque 0.8...1.2 Nm
Weight typical 6 g
VRSM VRRM Type
V V
45 45 DSS 60-0045B
Symbol Conditions Characteristic Values
typ. max.
IR VR= VRRM;T
VJ = 25°C 10 mA
VR= VRRM;T
VJ = 100°C 250 mA
VFIF = 60 A; TVJ = 125°C 0.57 V
IF = 60 A; TVJ = 25°C 0.60 V
IF = 120 A; TVJ = 125°C 0.87 V
RthJC 0.8 K/W
RthCH 0.25 K/W
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see Outlines.pdf
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
Power Schottky Rectifier
AC
TO-247 AD
A = Anode, C = Cathode , TAB = Cathode
C
AC (TAB)
© 2006 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0623
DSS 60-0045B
0.00.20.40.6
1
10
100
0 1020304050
0.1
1
10
100
1000
10000
10 30 500 204060
0
5
10
15
20
25
30
35
40
45
0.001 0.01 0.1 1 10
0.1
1
0 40 80 120 160
0
10
20
30
40
50
60
70
80
IF(AV)
TC
°C
IF(AV)
t
s
K/W
10 100 1000 10000
100
1000
10000
IFSM
tP
A
0 10203040
100
1000
10000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
Single Pulse
0.05 DSS 60-0045B
A
µs
TVJ=150°C
125°C
100°C
75°C
25°C
TVJ =
150°C
125°C
25°C
TVJ= 25°C
d=0.5 d =
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.25
0.17
DC
50°C
0.33
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode
