MBR1535CTG, MBR1545CTG Switch-mode Power Rectifier Features and Benefits * * * * * * * www.onsemi.com Center-Tap Configuration Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175C Operating Junction Temperature 15 A Total (7.5 A Per Diode Leg) These Devices are Pb-Free and are RoHS Compliant* SCHOTTKY BARRIER RECTIFIERS 15 AMPERES 35 and 45 VOLTS 1 Applications * Power Supply - Output Rectification * Power Management * Instrumentation 2, 4 3 MARKING DIAGRAM Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94, V-0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 4 TO-220 CASE 221A STYLE 6 1 2 AYWW MBR15x5CTG AKA 3 A Y WW x G AKA = Assembly Location = Year = Work Week = 3 or 4 = Pb-Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2015 January, 2015 - Rev. 9 1 Publication Order Number: MBR1535CT/D MBR1535CTG, MBR1545CTG MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1535CT MBR1545CT VRRM VRWM VR Average Rectified Forward Current (TC = 163C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 161C) Value Unit V 35 45 A 7.5 15 IFRM 15 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg -65 to +175 C TJ -65 to +175 C dv/dt 1000 V/ms Per Diode Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS PER DIODE Characteristic Symcbol Value Unit Maximum Thermal Resistance, Junction-to-Case (Min. Pad) RqJC 3.0 C/W Maximum Thermal Resistance, Junction-to-Ambient (Min. Pad) RqJA 60 C/W ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 7.5 Amps, TJ = 125C) (iF = 15 Amps, TJ = 125C) (iF = 15 Amps, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125C) (Rated DC Voltage, TJ = 25C) iR Min Typ Max - - - 0.47 0.63 0.66 0.57 0.72 0.84 - - 10 0.025 15 0.1 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping MBR1535CTG TO-220 (Pb-Free) 50 Units / Rail MBR1545CTG TO-220 (Pb-Free) 50 Units / Rail www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F i , INSTANTANEOUS FORWARD CURRENT (AMPS) F MBR1535CTG, MBR1545CTG 100 10 TJ = 150C 125C 1.0 75C 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 100 10 TJ = 150C 125C 1.0 75C 25C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage Figure 1. Typical Forward Voltage 100 100 TJ = 150C 10 I , REVERSE CURRENT (mA) R I , REVERSE CURRENT (mA) R TJ = 150C 125C 100C 1.0 75C 0.1 25C 0.01 0.001 0 10 20 125C 10 100C 1.0 75C 0.1 25C 0.01 30 0.001 50 40 0 10 VR, REVERSE VOLTAGE (VOLTS) , AVERAGE FORWARD CURRENT (AMPS) dc 10 SQUARE WAVE 8.0 6.0 4.0 F (AV) 2.0 145 150 155 160 165 170 I , AVERAGE FORWARD CURRENT (AMPS) F (AV) I 14 140 50 40 Figure 4. Maximum Reverse Current 16 0 135 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 12 20 175 16 RATED VOLTAGE APPLIED 14 RqJA = 16 C/W RqJA = 60 C/W (NO HEATSINK) dc 12 10 8.0 dc SQUARE WAVE 6.0 4.0 2.0 0 0 TC, CASE TEMPERATURE (C) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3 175 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 900 TJ = 175C TJ = 25C f = 1 MHz 800 SQUARE WAVE 700 C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) MBR1535CTG, MBR1545CTG dc 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Capacitance Figure 7. Forward Power Dissipation www.onsemi.com 4 50 MBR1535CTG, MBR1545CTG PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AH -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR1535CT/D