© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9 1Publication Order Number:
MBR1535CT/D
MBR1535CTG,
MBR1545CTG
Switch-mode
Power Rectifier
Features and Benefits
•Center−Tap Configuration
•Low Forward Voltage
•Low Power Loss / High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•15 A Total (7.5 A Per Diode Leg)
•These Devices are Pb−Free and are RoHS Compliant*
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94, V−0 @ 0.125 in
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ESD Rating: Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
35 and 45 VOLTS
1
3
2, 4
2
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 3 or 4
G = Pb−Free Package
AKA = Diode Polarity
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
AYWW
MBR15x5CTG
AKA
MBR1535CTG, MBR1545CTG
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1535CT
MBR1545CT
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(TC = 163°C) Per Diode
Per Device
IF(AV) 7.5
15
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 161°C) Per Diode IFRM 15 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS PER DIODE
Characteristic Symcbol Value Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad) RqJC 3.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad) RqJA 60 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
vF−
−
−
0.47
0.63
0.66
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR−
−10
0.025 15
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%
ORDERING INFORMATION
Device Package Shipping
MBR1535CTG TO−220
(Pb−Free) 50 Units / Rail
MBR1545CTG TO−220
(Pb−Free) 50 Units / Rail
MBR1535CTG, MBR1545CTG
www.onsemi.com
3
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
TA, AMBIENT TEMPERATURE (°C)
05025 75
2.0
4.0
6.0
8.0
10
TC, CASE TEMPERATURE (C°)
135
14
4.0
0
dc
SQUARE WAVE
145 155 160
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
2.0
12
16
6.0
8.0
10
12
14
16
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 150°C
100
10
1.0 1.2
75°C
VR, REVERSE VOLTAGE (VOLTS)
02010 30 40
0.001
0.01
0.1
100
I , REVERSE CURRENT (mA)
R
Figure 2. Maximum Forward Voltage
50
10
1.0 75°C
TJ = 150°C
125°C
25°C
Figure 3. Typical Reverse Current
140 150
100°C
Figure 4. Maximum Reverse Current
0100 125 150 175
SQUARE WAVE
RATED VOLTAGE APPLIED
RqJA = 16° C/W
dc
Figure 5. Current Derating, Case Per Leg
RqJA = 60° C/W
(NO HEATSINK)
Figure 6. Current Derating, Ambient Per Leg
VR, REVERSE VOLTAGE (VOLTS)
02010 30 40
0.001
0.01
0.1
100
I , REVERSE CURRENT (mA)
R
50
10
1.0
75°C
TJ = 150°C
125°C
25°C
100°C
0.1 0.3 0.5 0.7 0.9 1.10.0 1.3
125°C
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.4
1.0
0.6 0.8
0.1
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
25°C
TJ = 150°C
100
10
1.0 1.2
75°C
0.1 0.3 0.5 0.7 0.9 1.10.0 1.3
125°C
170 175
165
dc
MBR1535CTG, MBR1545CTG
www.onsemi.com
4
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F (AV)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
04 12816
24
16
0
8
4
12
SQUARE WAVE
Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance
20 24 28 30
20
28
dc
VR, REVERSE VOLTAGE (VOLTS)
500
300
0
050
700
C, CAPACITANCE (pF)
10 20 30
200
40
TJ = 25°C
f = 1 MHz
100
600
400
800
900
26
18
2
10
6
14
22
30
210614182226
TJ = 175°C
MBR1535CTG, MBR1545CTG
www.onsemi.com
5
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR1535CT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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