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DRS-232 Bus-Pin ESD Protection Exceeds
±15 kV Using Human-Body Model (HBM)
DMeets or Exceeds the Requirements of
TIA/EIA-232-F and ITU v.28 Standards
DOperates at 5-V VCC Supply
DFour Drivers and Five Receivers
DOperates Up To 120 kbit/s
DLow Supply Current in Shutdown
Mode ...1 µA Typical
DExternal Capacitors ...4 × 0.1 µF
DLatch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
DApplications
− Battery-Powered Systems, PDAs,
Notebooks, Laptops, Palmtop PCs, and
Hand-Held Equipment
description/ordering information
The MAX211 device consists of four line drivers, five line receivers, and a dual charge-pump circuit with
±15-kV ESD protection pin to pin (serial-port connection pins, including GND). The device meets the
requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication
controller and the serial-port connector. The charge pump and four small external capacitors allow operation
from a single 5-V supply. The devices operate at data signaling rates up to 120 kbit/s and a maximum of 30-V/µs
driver output slew rate.
The MAX211 has both shutdown (SHDN) and enable control (EN). In shutdown mode, the charge pumps are
turned off, V+ is pulled down to VCC, V− is pulled to GND, and the transmitter outputs are disabled. This
reduces supply current typically to 1 µA. EN is used to put the receiver outputs into the high-impedance state
to allow wired-OR connection of two RS-232 ports. It has no effect on the RS-232 drivers or the charge pumps.
ORDERING INFORMATION
TAPACKAGE†ORDERABLE
PART NUMBER TOP-SIDE
MARKING
SOIC (DW)
Tube of 20 MAX211CDW
MAX211C
0°C to 70°C
SOIC (DW) Reel of 1000 MAX211CDWR MAX211C
0°C to 70°C
SSOP (DB)
Tube of 50 MAX211CDB
MAX211C
SSOP (DB) Reel of 2000 MAX211CDBR MAX211C
SOIC (DW)
Tube of 20 MAX211IDW
MAX211I
−40°C to 85°C
SOIC (DW) Reel of 1000 MAX211IDWR MAX211I
−40°C to 85°C
SSOP (DB)
Tube of 50 MAX211IDB
MAX211I
SSOP (DB)
Reel of 2000 MAX211IDBR
MAX211I
†Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are
available at www.ti.com/sc/package.
Copyright 2004, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DB OR DW PACKAGE
(TOP VIEW)
DOUT3
DOUT1
DOUT2
RIN2
ROUT2
DIN2
DIN1
ROUT1
RIN1
GND
VCC
C1+
V+
C1−
DOUT4
RIN3
ROUT3
SHDN
EN
RIN4
ROUT4
DIN4
DIN3
ROUT5
RIN5
V−
C2−
C2+
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
!" # $%&" !# '%()$!" *!"&+
*%$"# $ " #'&$$!"# '& ",& "&# &-!# #"%&"#
#"!*!* .!!"/+ *%$" '$&##0 *&# " &$&##!)/ $)%*&
"&#"0 !)) '!!&"&#+
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Function Tables
INPUTS
DRIVER
RECEIVER
DEVICE STATUS
SHDN EN
DRIVER
RECEIVER
DEVICE STATUS
L L All active All active Normal operation
LH All active ZNormal operation
H X Z Z Shutdown
X = don’t care, Z = high impedance
EACH DRIVER
INPUTS
OUTPUT
DRIVER STATUS
DIN SHDN
OUTPUT
DOUT
DRIVER STATUS
L L H
Normal operation
HLLNormal operation
X H Z Powered off
X = don’t care, Z = high impedance
EACH RECEIVER
INPUTS
OUTPUT
RECEIVER STATUS
RIN EN
OUTPUT
ROUT
RECEIVER STATUS
L L H
Normal operation
HLLNormal operation
X H Z Powered off
X = don’t care, Z = high impedance
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logic diagram (positive logic)
DIN1 DOUT1
RIN2ROUT2
DIN2 DOUT2
RIN3ROUT3
7
6
5
26
2
3
4
27
RIN1ROUT1 89
DIN3 DOUT3
DIN4 DOUT4
1
28
RS-232
Outputs
TTL/CMOS
Inputs
RS-232
Inputs
TTL/CMOS
Outputs
21
20
SHDN
25
RIN4ROUT4
RIN5ROUT5
22
19
23
18
EN 24
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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range, VCC (see Note 1) −0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Positive charge pump voltage range, V+ (see Note 1) VCC − 0.3 V to 14 V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Negative charge pump voltage range, V− (see Note 1) 0.3 V to −14 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI: Drivers −0.3 V to V+ + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receivers ±30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range, VO: Drivers V− − 0.3 V to V+ + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Receivers −0.3 V to VCC + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit duration: DOUT Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance, θJA (see Notes 2 and 3): DB package 62°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
DW package 46°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature, TJ 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg −65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltages are with respect to network GND.
2. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable
ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
3. The package thermal impedance is calculated in accordance with JESD 51-7.
recommended operating conditions (see Note 4 and Figure 4)
MIN NOM MAX UNIT
Supply voltage 4.5 5 5.5 V
VIH
Driver high-level input voltage DIN 2
V
VIH Control high-level input voltage EN, SHDN 2.4 V
VIL Driver and control low-level input voltage DIN, EN, SHDN 0.8 V
VI
Driver and control input voltage DIN, EN, SHDN 0 5.5
V
VIReceiver input voltage −30 30 V
TA
Operating free-air temperature
MAX211C 0 70
°C
T
A
Operating free-air temperature
MAX211I −40 85 °
C
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 5 V ±0.5 V.
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4)
PARAMETER TEST CONDITIONS MIN TYP‡MAX UNIT
ICC Supply current No load, See Figure 6 14 20 mA
Shutdown supply current TA = 25°C, See Figure 1 1 10 µA
‡All typical values are at VCC = 5 V, and TA = 25°C.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 5 V ±0.5 V.
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DRIVER SECTION
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 4)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND 5 9 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND −5 −9 V
IIH
Driver high-level input current DIN = VCC 15 200
A
IIH Control high-level input current EN, SHDN = VCC 3 10 µA
IIL
Driver low-level input current DIN = 0 V −15 −200
A
IIL Control low-level input current EN, SHDN = 0 V −3 −10 µA
IOS‡Short-circuit output current VCC = 5.5 V, VO = 0 V ±10 ±60 mA
roOutput resistance VCC, V+, and V− = 0 V, VO = ±2 V 300 W
†All typical values are at VCC = 5 V, and TA = 25°C.
‡Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output
should be shorted at a time.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 5 V ±0.5 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
Maximum data rate CL = 50 pF to 1000 pF,
One DOUT switching, RL = 3 kΩ to 7 kΩ,
See Figure 2 120 kbit/s
tPLH (D) Propagation delay time,
low- to high-level output CL = 2500 pF,
All drivers loaded, RL = 3 kΩ,
See Figure 2 2µs
tPHL (D) Propagation delay time,
high- to low-level output CL = 2500 pF,
All drivers loaded, RL = 3 kΩ,
See Figure 2 2µs
tsk(p) Pulse skew§CL = 150 pF to 2500 pF, RL = 3 kΩ to 7 kΩ,
See Figure 3 300 ns
SR(tr) Slew rate, transition region
(see Figure 2) CL = 50 pF to 1000 pF,
VCC = 5 V RL = 3 kΩ to 7 kΩ,3 6 30 V/µs
†All typical values are at VCC = 5 V, and TA = 25°C.
§Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 5 V ±0.5 V.
ESD protection
PIN TEST CONDITIONS TYP UNIT
DOUT, RIN Human-Body Model ±15 kV
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RECEIVER SECTION
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4 and Figure 6)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
VOH High-level output voltage IOH = −1 mA 3.5 VCC−0.4 V V
VOL Low-level output voltage IOL = 1.6 mA 0.4 V
VIT+ Positive-going input threshold voltage VCC = 5 V, TA = 25°C 1.7 2.4 V
VIT− Negative-going input threshold voltage VCC = 5 V, TA = 25°C 0.8 1.2 V
Vhys Input hysteresis (VIT+ − VIT−) 0.2 0.5 1 V
riInput resistance VCC = 5 V, TA = 25°C 3 5 7 kW
Output leakage current EN = VCC,0 ≤ROUT ≤VCC ±0.05 ±10 µA
†All typical values are at VCC = 5 V, and TA = 25°C.
NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 5 V ±0.5 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (see Note 4)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
tPLH (R) Propagation delay time, low- to high-level output CL= 150 pF, See Figure 4 0.5 10 µs
tPHL (R) Propagation delay time, high- to low-level output CL= 150 pF, See Figure 4 0.5 10 µs
ten Output enable time CL= 150 pF,
See Figure 5 RL = 1 kΩ,600 ns
tdis Output disable time CL= 150 pF,
See Figure 5 RL = 1 kΩ,200 ns
tsk(p) Pulse skew‡See Figure 3 300 ns
†All typical values are at VCC = 5 V, and TA = 25°C.
‡Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
NOTE 4: Test conditions are C1−C4 = 0.1 µF, at VCC = 5 V ±0.5 V.
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PARAMETER MEASUREMENT INFORMATION
5 kΩ
+5.5 V
+
0.1 µF
5.5 V
EN
V−
+
−
0.1 µF
C1+
C1−
+
−
0.1 µF
C2+
C2−
400 kΩ
VCC
DIN DOUT
3 kΩ
ROUT RIN
D1 to D4
R1 to R5
GND
SHDN
5.5 V
0-V or 5.5-V Drive
+
−
0.1 µF
5.5 V
ISHDN
VCC
+
0.1 µF
V+
−
−
Figure 1. Shutdown Current Test Circuit
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PARAMETER MEASUREMENT INFORMATION
50 Ω
TEST CIRCUIT VOLTAGE WAVEFORMS
0 V
3 V
Output
Input
VOL
VOH
tPLH (D)
Generator
(see Note B) RL
RS-232
Output
tPHL (D)
CL
(see Note A)
SR(tr) +6V
tPHL (D) or tPLH (D)
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 120 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤10 ns, tf ≤ 10 ns.
1.5 V 1.5 V
3 V
−3 V
3 V
−3 V
0 V
SHDN
Figure 2. Driver Slew Rate and Propagation Delay Times
TEST CIRCUIT VOLTAGE WAVEFORMS
0 V
3 V
Output
Input
VOL
VOH
tPLH (D)
tPHL (D)
50% 50%
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: PRR = 120 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
1.5 V 1.5 V
50 Ω
Generator
(see Note B) RL
RS-232
Output
CL
(see Note A)
0 V
SHDN
Figure 3. Driver Pulse Skew
TEST CIRCUIT VOLTAGE WAVEFORMS
50 Ω
50%
50%
−3 V
3 V
1.5 V
1.5 V
Output
Input
VOL
VOH
tPHL (R)
Generator
(see Note B) tPLH (R)
Output
CL
(see Note A)
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
0 V
SHDN
0 V
EN
Figure 4. Receiver Propagation Delay Times
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PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
50 Ω
Generator
(see Note B)
3 V or 0 V
0 V
SHDN
EN
NOTES: A. CL includes probe and jig capacitance.
B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns.
C. tPLZ and tPHZ are the same as tdis.
D. tPZL and tPZH are the same as ten.
RL
S1
VCC GND
CL
(see Note A)
Output
VOLTAGE WAVEFORMS
VOH − 0.1 V
VOL
VOH
tPZH
(S1 at GND)
3 V
0 V
VOL + 0.1 V
Input 1.5 V 1.5 V
tPHZ
(S1 at GND)
tPLZ
(S1 at VCC)
0.8 V
tPZL
(S1 at VCC)
3.5 V
Output
Output
Figure 5. Receiver Enable and Disable Times
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APPLICATION INFORMATION
DOUT3 1
+
−
20 DIN3
400 kΩ
5 V
21
5 kΩ
27
ROUT3
26
RIN3
28 DOUT4
5 kΩ
18
ROUT5
19
RIN5
17 +−
16
15
+
−
C2−
C2+
DOUT1 2
400 kΩ
5 V
DIN1 7
400 kΩ
5 V
DIN2 6
DOUT2 3
RIN2 4
5 kΩ
ROUT2 5
14
13 V+
12
+
−
11 VCC
+
−
GND 10
DIN4
C1+
C1−
V−
RIN1 9
5 kΩ
ROUT1 8
24 EN
25 SHDN
5 kΩ
23
ROUT4
22
RIN4
400 kΩ
5 V
VCC
†C3 can be connected to VCC or GND.
NOTES: A. Resistor values shown are nominal.
B. Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should be
connected as shown.
CBYPASS
= 0.1µF
=
0.1 µF
6.3 V
C3†
C1 =
0.1 µF
6.3 V
C2 =
0.1 µF
16 V
C4 =
0.1 µF
16 V
Figure 6. Typical Operating Circuit and Capacitor Values
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APPLICATION INFORMATION
capacitor selection
The capacitor type used for C1−C4 is not critical for proper operation. The MAX211 requires 0.1-µF capacitors,
although capacitors up to 10 µF can be used without harm. Ceramic dielectrics are suggested for the 0.1-µF
capacitors. When using the minimum recommended capacitor values, make sure the capacitance value does
not degrade excessively as the operating temperature varies. If in doubt, use capacitors with a larger (e.g., 2×)
nominal value. The capacitors’ effective series resistance (ESR), which usually rises at low temperatures,
influences the amount of ripple on V+ and V−.
Use larger capacitors (up to 10 µF) to reduce the output impedance at V+ and V−.
Bypass VCC to ground with at least 0.1 µF. In applications sensitive to power-supply noise generated by the
charge pumps, decouple VCC to ground with a capacitor the same size as (or larger than) the charge-pump
capacitors (C1−C4).
electrostatic discharge (ESD) protection
Texas Instruments MAX211 devices have standard ESD protection structures incorporated on the pins to
protect against electrostatic discharges encountered during assembly and handling. In addition, the RS232 bus
pins (driver outputs and receiver inputs) of these devices have an extra level of ESD protection. Advanced ESD
structures were designed to successfully protect these bus pins against ESD discharge of ±15 kV when powered
down.
ESD test conditions
ESD testing is stringently performed by TI, based on various conditions and procedures. Please contact TI for
a reliability report that documents test setup, methodology, and results.
Human-Body Model
The Human-Body Model (HBM) of ESD testing is shown in Figure 7. Figure 8 shows the current waveform that
is generated during a discharge into a low impedance. The model consists of a 100-pF capacitor charged to
the ESD voltage of concern and subsequently discharged into the DUT through a 1.5-kΩ resistor.
−
+DUT
RD
1.5 kΩ
VHBM 100 pF
CS
Figure 7. HBM ESD Test Circuit
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APPLICATION INFORMATION
100 150 20050
0
1.5
1.0
0.5
0.0
Time − ns
IDUT − A
VHBM = 2 kV
DUT = 10 V, 1-Ω Zener Diode
Figure 8. Typical HBM Current Waveform
Machine Model
The Machine Model (MM) ESD test applies to all pins, using a 200-pF capacitor with no discharge resistance.
The purpose of the MM test is to simulate possible ESD conditions that can occur during the handling and
assembly processes of manufacturing. In this case, ESD protection is required for all pins, not just RS-232 pins.
However, after PC board assembly, the MM test no longer is as pertinent to the RS-232 pins.
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
MAX211CDB ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDBE4 ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDBG4 ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDBR ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDBRE4 ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDBRG4 ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDW ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDWE4 ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDWG4 ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDWR ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDWRE4 ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211CDWRG4 ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDB ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDBE4 ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDBG4 ACTIVE SSOP DB 28 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDBR ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDBRE4 ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDBRG4 ACTIVE SSOP DB 28 2000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDW ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDWE4 ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDWG4 ACTIVE SOIC DW 28 20 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDWR ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDWRE4 ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
MAX211IDWRG4 ACTIVE SOIC DW 28 1000 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
PACKAGE OPTION ADDENDUM
www.ti.com 28-May-2007
Addendum-Page 1
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 28-May-2007
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
MAX211CDBR SSOP DB 28 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1
MAX211CDWR SOIC DW 28 1000 330.0 32.4 11.35 18.67 3.1 16.0 32.0 Q1
MAX211IDBR SSOP DB 28 2000 330.0 16.4 8.2 10.5 2.5 12.0 16.0 Q1
MAX211IDWR SOIC DW 28 1000 330.0 32.4 11.35 18.67 3.1 16.0 32.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
MAX211CDBR SSOP DB 28 2000 367.0 367.0 38.0
MAX211CDWR SOIC DW 28 1000 367.0 367.0 55.0
MAX211IDBR SSOP DB 28 2000 367.0 367.0 38.0
MAX211IDWR SOIC DW 28 1000 367.0 367.0 55.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
MECHANICAL DATA
MSSO002E – JANUARY 1995 – REVISED DECEMBER 2001
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DB (R-PDSO-G**) PLASTIC SMALL-OUTLINE
4040065 /E 12/01
28 PINS SHOWN
Gage Plane
8,20
7,40
0,55
0,95
0,25
38
12,90
12,30
28
10,50
24
8,50
Seating Plane
9,907,90
30
10,50
9,90
0,38
5,60
5,00
15
0,22
14
A
28
1
2016
6,50
6,50
14
0,05 MIN
5,905,90
DIM
A MAX
A MIN
PINS **
2,00 MAX
6,90
7,50
0,65 M
0,15
0°–ā8°
0,10
0,09
0,25
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-150
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