VDABA1608 - A-Data Technology - Datasheet.Directory

V-Data VDABA1608

PC-133/CL2 SDRAM Unbuffered DIMM

16Mx64bits SDRAM DIMM based on 16Mx8, 4Bank, 4K Refresh, 3.3V SDRAM

General Description

The VDABA1608 is 16Mx64 bits Synchronous DRAM

Modules, The modules are composed of eight 16Mx8

bits CMOS Synchronous DRAMs in TSOP-II 400mil

54pin package and one 2Kbit EEPROM in 8pin

TSSOP(TSOP) package on a 168pin glass–epoxy

printed circuit board.

The V-Data is a Dual In-line Memory Module and is

intended for mounting onto 168-pins edge connector

sockets. Fully synchronous operation referenced to

the positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock.

The data paths are internally pipelined to achieve very

high bandwidth.

Features

•PC-133/CL2 support

•Auto refresh and self refresh

•4096 refresh cycles / 64ms

•Single 3.3±0.3V power supply

•All device pins are compatible with LVTTL

interface

•Data mask function by DQM

•Serial Presence Detect with EEPROM

•Module bank :one physical bank

•PCB : B6986RAB,Height (28.00mm),single

sided component, Four layers

Ordering Information.

Part No. Frequency Bank Ref. Package

VDABA1608 133Mhz/CL2 4 Banks 4K TSOP II

Pin Assignment

FRONT SIDE BACK SIDE

PIN NAME PIN NAME PIN NAME PIN NAME PIN NAME PIN NAME PIN NAME PIN NAME

1 VSS 22 NC 43 VSS 64 VSS 85 VSS 106 NC 127 VSS 148 VSS

2 DQ0 23 VSS 44 NC 65 DQ21 86 DQ32 107 VSS 128 CKE0 149 DQ53

3 DQ1 24 NC 45 /CS2 66 DQ22 87 DQ33 108 NC 129 NC 150 DQ54

4 DQ2 25 NC 46 DQM2 67 DQ23 88 DQ34 109 NC 130 DQM6 151 DQ55

5 DQ3 26 VCC 47 DQM3 68 VCC 89 DQ35 110 VCC 131 DQM7 152 VCC

6 VCC 27 /WE 48 NC 69 DQ24 90 VCC 111 /CAS 132 NC 153 DQ56

7 DQ4 28 DQM0 49 VCC 70 DQ25 91 DQ36 112 DQM4 133 VCC 154 DQ57

8 DQ5 29 DQM1 50 NC 71 DQ26 92 DQ37 113 DQM5 134 NC 155 DQ58

9 DQ6 30 /CS0 51 NC 72 DQ27 93 DQ38 114 NC 135 NC 156 DQ59

10 DQ7 31 NC 52 NC 73 VCC 94 DQ39 115 /RAS 136 NC 157 VCC

11 DQ8 32 VSS 53 NC 74 DQ28 95 DQ40 116 VSS 137 NC 158 DQ60

12 VSS 33 A0 54 VSS 75 DQ29 96 VSS 117 A1 138 VSS 159 DQ61

13 DQ9 34 A2 55 DQ16 76 DQ30 97 DQ41 118 A3 139 DQ48 160 DQ62

14 DQ10 35 A4 56 DQ17 77 DQ31 98 DQ42 119 A5 140 DQ49 161 DQ63

15 DQ11 36 A6 57 DQ18 78 VSS 99 DQ43 120 A7 141 DQ50 162 VSS

16 DQ12 37 A8 58 DQ19 79 CK2 100 DQ44 121 A9 142 DQ51 163 CK3

17 DQ13 38 A10/AP 59 VCC 80 NC 101 DQ45 122 BA0 143 VSS 164 NC

18 VCC 39 BA1 60 DQ20 81 WP 102 VCC 123 A11 144 DQ52 165 SA0

19 DQ14 40 VCC 61 NC 82 SDA 103 DQ46 124 VCC 145 NC 166 SA1

20 DQ15 41 VCC 62 NC 83 SCL 104 DQ47 125 CK1 146 NC 167 SA2

21 NC 42 CK0 63 NC 84 VCC 105 NC 126 NC 147 NC 168 VCC

Rev 1 April, 2001 1

V-Data VDABA1608

Pin Description

PIN NAME FUNCTION

CK0~3 System Clock Active on the positive edge to sample all inputs.

CKE0 Clock Enable Masks system clock to freeze operation from the next clock cycle. CKE

should be enabled at least on cycle prior new command. Disable input

buffers for power down in standby

/CS0~2 Chip Select Disables or Enables device operation by masking or enabling all input

except CK, CKE and L(U)DQM

A0~A11 Address Row / Column address are multiplexed on the same pins.

BA0~BA1 Banks Select Selects bank to be activated during row address latch time.

Selects bank for read / write during column address latch time.

DQ0~DQ63 Data Data inputs / outputs are multiplexed on the same pins.

DQM0~7 Data Mask Makes data output Hi-Z,

/RAS Row Address Strobe Latches row addresses on the positive edge of the CLK with /RAS low

/CAS Column Address Strobe Latches Column addresses on the positive edge of the CLK with /CAS low

/WE Write Enable Enables write operation and row recharge.

VDD/VSS Power Supply/Ground Power and Ground for the input buffers and the core logic.

SDA Serial data I/O EEPROM serial data I/O

SCL Serial clock EEPROM clock input

SA0~2 Address in EEPROM EEPROM address input

WP Write Protect for EEPROM Write Protect for Serial Presence Detect on DIMM

NC No Connection This pin is recommended to be left No Connection on the device.

Rev 1 April, 2001 2

V-Data VDABA1608

Block Diagram

DQ40

DQ41

DQ42

DQ43

DQ44

DQ45

DQ46

DQ47

DQ8

DQ9

DQ10

DQ11

DQ12

DQ13

DQ14

DQ15

DQ16

DQ17

DQ18

DQ19

DQ20

DQ21

DQ22

DQ23

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ24

DQ25

DQ26

DQ27

DQ28

DQ29

DQ30

DQ31

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ48

DQ49

DQ50

DQ51

DQ52

DQ53

DQ54

DQ55

DQ56

DQ57

DQ58

DQ59

DQ60

DQ61

DQ62

DQ63

DQ32

DQ33

DQ34

DQ35

DQ36

DQ37

DQ38

DQ39

D4

D6

D7 D3

D2

D1

D0

D5

DQM

/CS

/CS2

/CS0

/CS

DQM

DQM DQM0

DQM1

DQM2

DQM3DQM7

DQM6

DQM5

DQM4

/RAS

VSS

SCL

SPD

47K Ohms SA0 SA1 SA2

A0 A1 A2

SDA

WP

VCC

/WE

/CAS

/RAS : D0 ~D7

/WE : D0 ~D7

/CAS : D0 ~D7

A0~A11

BA0/BA1:D0~D7

BA0/BA1

A0~A11:D0~D7

D0~D7

CK : 2 SDRAMs

CKE : D0~D7

CKE0

CK2

CK1

CK3

CK0

3.3 pF

10 Ohm

Rev 1 April, 2001 3

V-Data VDABA1608

Absolute Maximum Ratings

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, Vout -1.0 ~ 4.6 V

Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V

Storage temperature TSTG -55 ~ +150 ℃

Power dissipation PD 8 W

Short circuit current IOS 50 mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC Operating Condition

Voltage referenced to Vss = 0V, TA = 0 to 70 ℃

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD, VDDQ 3.0 3.3 3.6 V

Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1

Input logic low voltage VIL -0.3 0 0.8 V 2

Output logic high voltage VOH 2.4 - - V IOH=-2mA

Output logic low voltage VOL - - 0.4 V IOL=2mA

Input leakage current IIL -5 - 5 uA 3

Output leakage current IOL -5 - 5 uA 4

Note : 1. VIH (max)=4.6V AC for pulse width ≦ 10ns acceptable.

2.VIL(min)=-1.5V AC for pulse width ≦ 10ns acceptable.

3.Any input 0V ≦ V

IN ≦ VDD + 0.3V, all other pins are not under test = 0V.

4.Dout is disabled, 0V ≦ V

OUT ≦ VDD.

AC Operating Condition

Voltage referenced to Vss = 0V, TA = 0 to 70 ℃

Parameter Symbol Value Unit Note

AC input high / low level voltage VIH / VIL 2.4 / 0.4 V

Input timing measurement reference level voltage Vtrip 1.4 V

Input rise / fall time TR / tF 1 Ns

Output timing measurement reference level Voutfef 1.4 V

Output load capacitance for access time measurement CL 50 pF 2

Note: 1. 3.15V ≦ VDD ≦ 3.6V

2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,

refer to AC/DC output load circuit.

Rev 1 April, 2001 4

V-Data VDABA1608

Capacitance

TA=25℃, f-=1Mhz, VDD=3.3V

Parameter Pin Symbol Min Max Unit

CLK Cl1 25 40 pF Input capacitance

A0~A11,BA0,BA1,CKE,/CS,/RAS,

/CAS,/WE,DQM

Cl2 40 55 pF

Data input / output capacitance DQM CI/O 5 15 pF

Output load circuit

V

OH

(DC) = 2.4V,I

OH

= -2m

A

V

OL

(DC) = 0.4V,I

OL

= 2mA

3.3 V

1200 ohms

870 ohms50 pF

Output

DC Characteristics I

Parameter Symbol Min Max Unit Note

Input leakage current ILI -1 1 uA 1

Output leakage current ILO -1 1 uA 2

Output high voltage VOH 2.4 - V IOH = -4mA

Output low voltage VOL - 0.4 V IOL = 4mA

Note : 1.VIN = 0 TO 3.6V, All other pins are not tested under VIN = 0V.

2.DOUT is disabled, VOUT = 0 to 3.6.

Rev 1 April, 2001 5

V-Data VDABA1608

DC Characteristics II

Parameter Symbol Test condition Speed Unit Note

Operating Current IDD1

Burst length=1, One bank active

tRC≧tRC(min),IOL=0mA

700 mA 1

IDD2P CKE≦VIL(max), tCK=min 16

Precharge standby

current in power

down mode IDD2PS CKE≦VIL(max), tCK=∞ 16

mA

IDD2N

CKE≧VIH(min), /CS≧VIH(min),

tCK=min input signals are

changed one time during 2clks.

All other pins ≧VDD-0.2V or ≦

0.2V

160

Precharge standby

current in Non power

down mode

IDD2NS

CKE≧VIH(min), tCK=∞

Input signals are stable.

80

mA

IDD3P CKE≦VIL(max), tCK=min 60

Active standby

current in power

down mode

IDD3PS CKE≦VIL(max), tCK=∞ 60

mA

IDD3N

CKE≧VIH(min), /CS≧VIH(min),

tCK=min input signals are

changed one time during 2clks.

All other pins ≧VDD-0.2V or ≦

0.2V

320

Active standby

current in Non power

down mode

IDD3NS

CKE≧VIH(min), tCK=∞

Input signals are stable.

320

mA

Burst mode operating

current

IDD4

tCK≧tCK(min),IOL=0 mA

All banks active

800 mA 1

Auto refresh current IDD5

tRRC≧tRRC(min), All banks

active

1,920 mA 2

Self refresh current IDD6 CKE≦0.2V 16 mA

Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output

open.

2. Min. of tRRC is shown at AC characteristics.

Rev 1 April, 2001 6

V-Data VDABA1608

AC Characteristics

VDABA1608

Parameter Symbol

Min Max

Unit Note

/CAS Latency = 3 tCK3 7.5 System clock

Cycle time /CAS Latency = 2 tCK2 7.5

1000 ns

Clock high pulse width tCHW 2.5 ns 1

Clock low pulse width tCLW 2.5 ns 1

/CAS Latency = 3 tAC3 5.4 Access time form

clock /CAS Latency = 2 tAC2 6

ns 2

Operation tRC 65

/RAS cycle time

Auto Refresh tRRC 65

ns

/RAS to /CAS delay tRCD 20 ns

/RAS active time tRAS 45 100K ns

/RAS precharge time tRP 20 ns

/RAS to /RAS bank active delay tRRD 15 ns

/CAS to /CAS delay tCCD 1 CLK

Write command to data – in delay tWTL 0 CLK

Data – in to precharge command tDPL 2 CLK

Data – in active command tDAL 5 CLK

DQM to data – out Hi-Z tDQZ 2 CLK

DQM to data – in mask tDQM 0 CLK

Data – out hold time tOH 2.7 ns

Data – input setup time tDS 1.5 ns 1

Data – input hold time tDH 0.8 ns 1

Address setup time tAS 1.5 ns 1

Address hold time tAH 0.8 ns 1

CKE setup time tCKS 1.5 ns 1

CKE hold time tCKH 0.8 ns 1

Command setup time tCS 1.5 ns 1

Command hold time tCH 0.8 ns 1

CLK to data output in low Z-time tOLZ 1 ns

MRS to new command tMRD 2 CLK

Power down exit time tPDE 1 CLK

Self refresh exit time tSRE 1 CLK 3

Refresh time tREF 64 ms

Note : 1. Assume tR / tF (input rise and fall time) is 1 ns.

2. Access times to be measured with input signals of 1v / ns edge rate.

3.A new command can be given tRRC after self refresh exit.

Rev 1 April, 2001 7

V-Data VDABA1608

Command Truth-Table

Command CKEn-1 CKEn /CS /RAS /CAS /WE DQM ADDR A10/AP BA

Mode Register Set H X L L L L X OP code

H X X X

No Operation H X

L H H H

X X

Bank Active H X L L H H X RA V

Read L

Read with Auto Precharge

H X L H L H X CA

H

V

Write L

Write with Auto Precharge

H X L H L L X CA

H

V

Precharge All Bank H X

Precharge select Bank

H X L L H L X X

L V

Burst Stop H X L H H L X X

DQM H X V X

Auto Refresh H H L L L H X X

Entry H L L L L H X

H X X X

Self Refresh

Exit L H

L H H H

X

H X X X

Entry H L

L H H H

X

H X X X

Precharge

Power down

Exit L H

L H H H

X

H X X X

Entry H L

L V V V

X

Clock Suspend

Exit L H X X

X

Rev 1 April, 2001 8

V-Data VDABA1608

Package Information

0.100 Max

0.050 ± 0.0039

(1.270 ± 0.10)

0.250

(6.350)

Detail A

0.123 ± 0.005

(3.125 ± 0.125)

0.250

(6.350)

Detail B

0.123 ± 0.005

(3.125 ± 0.125)

0.079 ± 0.004

(2.000 ± 0.100)

0.079 ± 0.004

(2.000 ± 0.100)

0.200 Min

(5.08 Min)

(2.54 Max)

5.250

5.014

Units : Inches (Millimeters)

R 0.079

(R 2.000)

0.250

(6.350)

1.450

(36.830)

2.150

(54.61)

0.118

(3.000)

0.350

0.100 Min

(2.540 Min)

0.700

(17.780)

.118DIA ± 0.004

(3.000DIA ± 0.100)

(8.890)

A B C

0.250

(6.350)

.450

(11.430) 4.550

(115.57)

0.157 ± 0.004

(4.000 ± 0.100)

0.089

(2.26)

(127.350)

(133.350)

1.102

(28.000)

0.118

(3.000)

0.050

0.008 ± 0.006

(0.200 ± 0.150)

(1.270)

0.100 Min

(2.540 Min)

Detail C

0.039 ± 0.002

(1.000 ± 0.050)

Rev 1 April, 2001 9