BDX53BFP
S ILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
■GE NER AL PU RPOSE SW ITC HING AND
AMPLI FI ER
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medi um power
linear and switching applications.
INT E R NAL SCH E M ATI C DIAG RA M
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IE = 0) 80 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Peak Current (repetitive) 12 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC29 W
Visol Insulation Withstand Voltage (R MS) from All
Three Leads to External Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
T0-220FP
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 4.3
70
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 80 V 0.2 mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 40 V 0.5 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V
2mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA 80 V
VCE(sat)∗Collector-emitter
Saturation Voltage IC = 3 A IB =12 mA 2 V
VBE(sat)∗Base-emitter
Saturation Voltage IC = 3 A IB =12 mA 2.5 V
hFE∗DC Current Ga in IC = 3 A VCE = 3 V 750
VF∗Parallel Diode Forward
Voltage IF = 3 A
IF = 8 A 1.8
2.5 2.5 V
V
∗ P ulsed: Pulse durat ion = 300 µs, duty cy cle 1.5 %
Safe O perat ing Area
BDX53BFP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BDX53BFP
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich ma y resul t from i ts use. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplied. STMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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BDX53BFP
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