Rugged Power MOSFETs 2N6804 Avalanche-Energy-Rated P-Channel Power MOSFETs -11A, -100V Toston) = 0.300 Features: @ Single pulse avalanche energy rated SOA is power-dissipation limited = Nanosecond switching speeds = Linear transfer characteristics High input impedance The 2N6804 is an advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This is a p-channet enhancement-mode silicon-gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. This type can be operated directly from integrated circuits The 2N6804 is supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings File Number 2217 TERMINAL DIAGRAM 92CS-43262 P~ CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION DRAIN SOURCE (FLANGE) OF 6 GATE 92CS-37801 JEDEC TO-204AA Parameter 2N6804 Units Vos Drain-Source Voltage 100 v Voa Drain-Gate Voltage (Rag = 20k) -100* v Ip @ Te = 26C Continuous Drain Current -11" A Ip @ Te = 100C Continuous Drain Current -7.0 A om Pulsed Drain Current -50 A Ves Gate-Source Voltage +20 Vv Pp @ Te = 26C Max. Power Dissipation 75" w (See Fig. 14) Linear Derating Factor 0.6" wre {See Fig. 14) Eas Single Pulse Avalanche Energy @ 500 md Ty Operating Junction and -55* to 150 ec Tstg Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-320Electrical Characteristics @ tc = 25C (Uniess Otherwise Specified) 2N6804 Parameter Min. Typ. Max. Units Test Conditions 8Vpss Drain-Source Breakdown Voltage ~ 100 - = v Ves = OV, Ip = 1.0mA Vestn) Gate Threshold Voltage -2.0 - -4.0 v Vos = Ves. lp = ~0.25mA less Gate-Source Leakage Forward - - - 100 nA Vag = -20V less Gate-Source Leakage Reverse _ - 100 nA Ves = 20V loss Zero Gate Voltage Drain Current - _ 0.25* pA Vps = Max. Rating, Vgg = OV - 1000 yA Vps = Max. Rating x 0.8, Vgg = OV, To = 125C Vos(on) _n-State Drain Current -11 _ - A Vos > 'pjon) * Rosion) max., YG = ~10V Apsion) _Static Drain-Source On-State- - _ 0.30 Q Veg = -10V, Ip = -6.5A : Resistance Sts Forward Transconductance 2.0 3.7 - sw) Vos > 'pion) * Apsion) Max. lp = -6.5A Cigs Input Capacitance 400 500 _ pF Vas = OV. Vos = -25V, f = 1.0 MHz Coss Output Capacitance 100 300 _ pF See Fig. 10 Crss Reverse Transfer Capacitance 50 100 - pF ta(on) Turn-On Delay Time _ 30 60 ns Vop = -35V. Ip = -7.0A, Zy = 502 ty Rise Time _ 70 140 ns See Fig. 17 tarot Turn-Off Delay Time - 70 140 ns {MOSFET switching times are essentially - indep of operating temperature.) 17 Falt Time - 70 140 ns Qg Total Gate Charge _ 25 45 nc Vas = 15V, Ip = 15A, Vpg = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially i if i @. Qgs Gate-Source Charge = 13 23 ne P oF operating temp ) Qqa Gate-Drain (Miller) Charge - 12 22 nc Lo internal Drain Inductance _ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbot showing the header that is closer to| internal device . source and gate pins inductances. and center of die. tp ls internal Source Inductance - 12.5 _ nH Measured from the bE source pin, 6 mm coe {0.25 in.) from header ls! and source bonding { pad. 3 Thermal Resistance Rgsc Junction-to-Case - - 1.67 C/W Rgcs Case-to-Sink - 0.1 _ C/W Mounting surface flat, smooth, and greased. Roa Junction-to-Ambient _ - 30 C/W Typical socket mount Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions e Is Continuous Source Current - - 1" A Modified MOSFET symbot _ (Body Diode) showing the integral be reverse P-N junction rectifier. & E Isms Pulse Source Current (Body Diode) - - -50 A Vgp Diode Forward Voltage _ 15 Vv To = 25C, ig = 11A, Vgg = OV s tyr Reverse Recovery Time _ _ 250 ns Ty = 25C, ip = -11A, dig/dt = -100 Ajus QraR Reverse Recovered Charge _ 18 - uc Ty = 25C, ip = -11A, dig/dt = -100 Aus ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controtied by Lg + Lp. "JEDEC Registered Value @ Pulse Test: Pulse width < 300ys, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature, See Transient Thermai impedance Curve (Fig. 5). @ Voo = 25V, Starting Ts = 25C, L = 6.2 mH, Hy = 259, Peak I, = 11 A, (See Fig. 15 and 16). Rugged Power MOSFETs 6-321Rugged Power MOSFETs 2N6804 80 S PULSE Vos > !pion) * Rps(on} max. Ty = 125 a a w w c w ws a a = = < < k b z z we w 4 4 4 x > 2 o a z Zz < < 4 4 a a 8 8 ~ -6 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vag. GATE-TO-SOURCE VOLTAGE (VOLTS) 9208-43288 92CS-43289 -10 Fig. 1 - Typical Output Characteristics Fig. 2- Typical Transfer Characteristics Te = 25 Ty = 180C Reuc = 1.67 C/W SINGLE a ws 4 w a = < bt z Ww ec ec > o z < gc a 6 Ip, DRAIN CURRENT (AMPERES) 464 2 4 68 2 468 71 -2 -3 ~4 -5 -0.1 -10 100 -1000 Vpg. ORAIN-TO-SOURCE VOLTAGE {VOLTS) Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) 92CS-43290 9208-43301 Fig. 3 - Typical saturation characteristic. Fig. 4 - Maximum safe operating area. ay IMPEDANCE (PER UNIT) . DUTY FACTOR, D = ty/t2 . PER UNIT BASE = Rgic PULSE (TRANSIENT = 1.67 DEG. C/W. THERMAL IMPEDANCE) - Tam - To e G2 ug az =< za of zu -2 SS Su ei Nw 19-3 10-2 19-1 1.0 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) 10-5 10-4 92CM- 43302 Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 6-322Rugged Power MOSFETs Yps > Iban) * Ros{on) max. 80 a 2 w = uw a w 9 z < & gy 3 4 z o 9 a z < F 2 Da _ 12 1 Ip, ORAIN CURRENT (AMPERES) 9208-43293 Fig. 6 - Typical transconductance vs. drain current. 2 a BVpgs, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) -40 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) 9208-43294 Fig. 8 - Breakdown voltage vs. temperature. Ves =0 f=1MHz Ciss = Cgs + Cg. Cds SHORTED Crss = Cag Cgs as gd Coss = Cas + Oss ds Goa + Cga Rt Cas + C, CAPACITANCE (pF) -10 -20 -30 ~40 -50 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9208-43298 Fig. 10 - Typical capacitance vs. drain-to-source voltage. 2N6804 z < = a w-t a ra wi > in S 0.4 -06 -08 -1.0 -1.2 -1.4 1.6 -1.8 Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) 9208-43270 Fig. 7 - Typical source-drain diode forward voltage. nN iy _ o NU 1.4 ma 1.0 = | Veg = -10V 0.6 Baa Rosen), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) ev 40 80 120 40 o Ty, JUNCTION TEMPERATURE (C) 92C:8-43303 Fig. 9 - Normalized on-resistance vs. temperature. a Ip =-15A a FOR TEST CIRCUIT 3} N SEE FIGURE 18 2 -s Ww g < 5 $ -10 \. i =p Vos = -80V @ ' 3 Vps = -S0V 6% Vos 2-20 e DS 2 < @ -20 a 8 > =25 16 24 32 40 Qg, TOTAL GATE CHARGE (nC) 9208-43297 Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-323Rugged Power MOSFETs 2N6804 Vas = -10V % 9 2 RDSjon). DRAIN-TO-SOURCE ON RESISTANCE (OHMS) ios =e 0.28 Rpscon) MEASURED WITH CURRENT PULSE OF 2.045 DURATION. INITIAL Ty = 25 C (HEATING EFFECT OF 2.0uS PULSE IS MINIMAL) 1. 1 1 . 1 L -10 -20 30 tp, DRAIN CURRENT (AMPERES) 50 92C$-43298 Fig. 12 - Typical on-resistance vs. drain current. a E < = z 2 a a oO a 6 wi = 2 6 a Fig. VGs (ON) + ov to INPUT VGs (OFF) OV Vos (OFF) ouTPuT Vos (ON) 6-324 20 40 60 80 100 120 140 160 180 Tc, CASE TEMPERATURE (C) 190 92C$-43305 14 - Power vs. temperature derating curve. lh WIDTH 10% INPUT PULSE RISE TIME INPUT PULSE FALL TIME ta ton) tr ta loft) ty 10 % 90 % 20% 10 % 9208-43906 Fig. 17 - Switching time tast circuit. z wi re = < e z uw x 3 3 z a 25 so 75 100 128 150 Tc, CASE TEMPERATURE (C) 9205-43304 Fig. 13 - Maximum drain current vs. case temperature. Vos OUT Rg TIT {ov Vag =-10V VARY tp TO OBTAIN REQUIRED PEAK I, 9208-43278 Fig. 15 - Unclamped inductive test circuit. . Yoo tp BVpss 9208-43279 Fig. 16 - Unclamped inductive wavetorms. -Vps -O ISOLATED CURRENT SUPPLY REGULATOR { ad 13 J COMPLEMENT 5 OF DUT BATTERY J e }DUT s v FT ow 0+ DS CURRENT SAMPLING RESISTOR CURRENT SAMPLING RESISTOR 92CS-43307 Fig. 18 - Gate charge test circuit.