SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEo hee VcE(sat) fr C&yp @ 10V Ic Device Type @ 10mA Typical 1MHz Continuous @25C (Vv) Min. Max. @ Ic{mA) Voce (v) Max. @ le (mA) Ig (mA) (MHz) Typical (Pe) (mA) (mW) GES5819 40 150 GES5820 60 125 GES5821 60 125 MPSAO5 60 100 MPSA06E 80 100 MPSA12 20 50 MPSA13 30 50 MPSA14 _ 30 50 MPSA20 40 MPSA5S_ 60 4 100 MPSA56 : 80 100 MPSA65 | , 30 MPSA66 30 MPS3638 25 MPS3638A 25 MPS3702 | | 26 MPS3703 30 MPS3704 30 MPS3705 30 MPS3706 20 MPS5172 25 MPS6076 | 25 MPS6512 30 MPS6513 30 MPS6514 | 25 MPS6515 25 MPS6516 40 MPS6517 40 MPS6518 MPS6519 MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 MPS6565 MPS6566 D39C1-6 D38H1-6 0391-6 D38L1-6 D38S1-10 D38Y1-3 D38ws-11 105 > SILICON SIGNAL TRANSISTORS 4 COMPLEMENTARY PAIRS jy TO0-92 PACKAGE Mi DEVICE BVcEo hee VcE(SAT) NPN PNP (v) MIN.-MAX. @ Ico, Vee (V) (Vv) MAX. @ tc, I 50- 1001 100mA 1 COMPLEMENT 100mA MPS3703 50mA PS$3704 MPS3703 MPS6512 Me eeet 6 i 14 1 M 1 MPS6515 250-500 MPS6519 50-100 90-180 MPS6513 150-300 MPS6514 15 120 90-270 MPS6533 1 MPS6530 MPS6534 90-270 100-500 MPS60 76 76 1 1 60-500 D D38L1-3 D -3 D38L4-6 D39C4-6 108 Silicon Transistors The General Electric MPS3702 and MPS3703 are silicon, PNP planar, epitaxial, pas- sivated transistors, designed for general audio frequency applications and linear ampli- fiers. For complimentary NPN types see MPS3704, MPS3705 and MPS3706 specification. Voltage and current valves for PNP are negative, observe proper bias polarity. absolute maximum ratings: (T,4 =25C unless otherwise specified) Lt SEATINGPLANE | EMITTER 2. BASE Voltages MPS3702 MPS3703 TO-92 3. COLLECTOR oltag Collector to Emitter Vceo 25 30 Volts Collector to Base Vcro 40 50 Volts t Emitter to Base VEBO 5 5 Volts aeetoretorel 3 Current : Collector Ie 200 mA Dissipation Total Power Tyg S 25C Pr 350 Watts Total Power Tc = 25C Pr 1.0 Watts Derate Factor Tag > 25C _ 2.8 _ mW/C Derate Factor Te >25C _ 8 mW/C Temperature NOTES: . \. THREE LEADS storage and Pperanns ' Tera, Ty -55 to + 150 C 2. CONTOUR oF PACKAGE UNCONTROLLED OUTSIDE f 99 ~ o> cad O16 Seon rom T, +260 C 3.(THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. @b APPLIES BETWEEN Lo AND 12.70 MM (.500") FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED INL, AND BEYOND 12.70 MM (.500") FROM SEATING PLANE. electrical characteristics: (1, =25C unless otherwise specified) MPS3702 MPS3703 STATIC CHARACTERISTICS Symbol Min. Max. Min. Max. Units Collector-emitter breakdown voltage (Ic = 10mA, Ip = 0) V (BR)CEO* 25 30 Volts Collector-base breakdown voltage (c= 100uA, Ig = 0) V(BR)CBO 40 50 Volts Emitter-base breakdown voltage (Ie = 100uA, Ic = 0) V(BR)EBO 5 5 Volts Collector cutott current (Vcp = 20V, I~ = 0) IcBo 100 100 nA Emitter-base reverse current (VeEB = 3V, Ie = 0) TeBo 100 100 nA Forward current transfer ratio (Vce = 5V, Ic = 50mA) heres 60 300 30 150 Collector-emitter saturation voltage (Ic = 50mA, Ip = S5mA) V cesayy* 25 25 Volts Base-emitter voltage (Vce = SV, Ic = 50mA) V BE(on)* 6 I 6 1 Volts DYNAMIC CHARACTERISTICS Collector-base capacitance (Vcp = 10V, Ig = 0, f = IMHz) Cop 12 12 pf Current Gain-Bandwidth Product (Vce = 5V,I = 50mA, f = 20MHz) fey 100 100 MHz *Pulse Conditions: Pulse Width < 300 wS and duty cycle = 2% 360 = Ig-COLLECTOR CURRENT- mA MPS3702, 3 TYPICAL CHARACTERISTIC CURVES I Z Hy Ly > \ La 8 -Lo a 2 LL ee wy 3 eae MV s Tas-B5C eee] | iy 5 -a = oo Het Le eg 7 pt poo : ee | | tet oe rq25e ee iL 5 6 LadeetT | aT LT 2 oe prey] 3 uw | mannegernestnn} Tarl25C eer Ll 5 5 et a -4 er i f i ; 3 Leer tt | z olen z Ss -2 2 a : g oO > -.01 -4 I =10 =100 =1000 I COLLECTOR CURRENT -mA Te ~CCLLECTOR =m BASE-EMITTER SATURATION VOLTAGE BETA VS, COLLECTOR CURRENT VS, COLLECTOR CURRENT ee Te OTR ~ I 2018 A -20ph =1Opa cE (gary COLLECTOR-EMITTER SATURATION VOLTAGE -VOLTS 9 10 -20 ~30 7 Yor -COLLECTOR VOLTAGE-VOLTS COLLECTOR CHARACTERISTICS Te COLLECTOR CURRENT: 9A COLLECTOR-EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1361