2011-07-28
1
BCR583
1
2
3
PNP Silicon Digital Transistor
• Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
EHA07183
3
21
C
EB
R
1
R
2
Type Marking Pin Configuration Package
BCR583 XMs 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 50
Input reverse voltage Vi(rev) 10
Collector current IC500 mA
Total power dissipation-
TS ≤ 79 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 215 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCR583
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector-base cutoff current
VCB = 50 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO - - 0.75 mA
DC current gain-
IC = 50 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 50 mA, IB = 2.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.6 - 1.5
Input on voltage
IC = 10 mA, VCE = 0.3 V
Vi(on) 1.1 - 2.5
Input resistor R17 10 13 kΩ
Resistor ratio R1/R20.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT- 150 - MHz
1Pulse test: t < 300µs; D < 2%
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BCR583
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1 10 0
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Collector-emitter saturation voltage
VCEsat = ƒ(IC), hFE = 20
10 -3 10 -2 10 -1 10 0
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
0.5
VCEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1 10 0
A
IC
-1
10
0
10
1
10
2
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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BCR583
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
4
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BCR583
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-07-28
6
BCR583
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
