DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ ..*. s Beta Match as tight as 0.9 to 1 6-LEAD TO-5 6-LEAD TO-18 o as low as 3.0 db max at f = 1 kc 2;::;2 2;:; 2N2979 2N2920 oo 04 ,.,&i \~ \ ABSOLUTE MMIMUM RATINGS :+ otherwise noted) ~ `*,,,,<, \, .. ,. ,... 2N2919-20 2N2978-79 2N2972-77 Collector-Base Voltage Collector-Emitter Voltage Unit 6 45 60 Vdc 45 60 Vdc 6 %20 10 Pin Connections, All Leads `5 +0 % 10 $,j\, ~&291 3-]8 % 3 20 % J,+ `~z~~%$ .x> , ` Rating Characteristics 04 05 .t7<,\\\ (TAeq~~{f@\eSS ;3 Electrically Bottom View Isolated From Case .+. Emitter-Base Voltige w':) .>"t:~p$,~~ --- ~,~:r.. DC Collector Curre~.. `$, .!1. `I'\$ >&., ~f'i...,i$,, Jmction Temp~fa@)e/,* \..,,., ,,,,,.. ,,(~:,\!..., Storage Te#per~&Te \,J, ,... ?V`!$.`"<*? 8-' ,...~ .&::-.. . `*Ji\,. . ~..l:~$ ~nge s,.<}. To/$f~yYce Dissipation @ TA= 25 C >\,, ... TO?$ Case Derate above 25 C 6 Vdc 30 mAdc +200 `c -65 to +200 "c VEBO lC `J T Stg ONE SIDE BOTH SIDES PD 300 600 1.7 3.4 250 1.43 1.72 mW mW/O C TO-5 Case Derate above 25 C 750 4.3 1500 8.6 mW mW/O C TO-18 Case Derate above 25 C 500 2.85 750 4.3 mW mW~ C TO-18 Case Derate above 25 C Total Device Dissipation @ Tc= 250 C mPatents 300 mW mW/O C PD TO-5 TYPE TO-18 TYPE 2N2972-79 2N2913-20 pending A @ SUBSIDIARY OF MOTOROLA INC. ELECTRICAL CHARACTERISTICS (At T.= 25 C unless otherwise noted) Breakdown IE = O) Collector-Emitter (IC = 10 mAdc, Volhge Voltige 2N2913, 2N2919, = 45 Vdc, Cutoff ~ = O) = 1 mAdc, 00tput VCE = 5 Vdc, TA = -55C) VCE = 5 Vdc) Current &in VCE = 5 V, f =20 kput hpedance (Ic=l.OmA, VcB=5V, f=lkc) @tput Atiithnce (Ic=l. OmA, VcB=5V, f=lkc) Noise mc) _ 0.002 -- -- 0.35 _ _ 0,7 60 150 -- -- 240 600 15 30 -- -- -- -- "~, `?6, 78 75,' 77, 79 100 225 -- -- -- -- 74, 75, 150 300 -- -- -- -- -- 4 6 3.0 -- -- .!, ,i!t~ ~.,::.: :? ~ ,. .;>,~<)~r.,. ~$~tih>' to 1.0 2N2913, 2N2914, 16, 16, 17, 19, 2N2972, 7~\,~,~# 18, 20, 2N297%$~,&<:$J/ ~g 2N2913, 2N2914, 15, 17, 16, 18, 76, 77, `FE 7e 79 c -- pf obo -- Ihfel hib ohms 25 28 32 -- -- 1.0 @mhos ob db 16, 15, 18, 20, 17, 19, 73, 72, 75, 74, 77, 76, 79 78 -- -- 2 3 3 4 BW = 10 kc 2N2914, 2N2913, 16, 15, 18, 20, 17, 19, 73, 72, 75,'77, 74, 76, 79 76 -- -- 2 3 3 4 2N2917, 2N2915, 18, 16, 76, 77 19, 20, 75, 78, 79 0.8 0.9 -- .-- 1,0 1,0 -- 74, mA, 2N2917, 2N2915, 18, 16, 76, 19, 77 20, 75, 78, 79 -- -- _ -- 10 5 mVdc 74, 2N2917, 2N2915, 18, 16, 76, 19, 77 20, 74, 75, 78, 79, -- -- _ _ 5 3 2N2917, 2N2915, 18, 16, 76, 77 19, 20, _ -- 74, 75, 78, 79 -- _ 1.6 0.8 2N2917, 2N2915j 18, 16, 76, 77 19, 20, -- _ 75, 78, 79 -- _ 2.0 74, VCE = 5 Vdc) VCE = 5 Vdc, 300 &se., 10west `FE reading du~ TA = 25 to 125" C) cycle bFEl /h FE2 ** [VBE1-VBE21 A(VBE1-VBE2) mVdc 1.0 s 2% is taken as hFE1 for this ratio Semiconduc~or MOTOROLA @ 17, 18, 2N2914, 2N2913, 200 CPS VCE = 5 Vdc) = 100pAdc, **The Vdc NF `ty. Tests PAdc RG = l~~w~'"~ Base Voltige Differential Change (Ic = 100 #Adc, VCE = 5 Vdc, TA = -55 to +25C) * Pulse Vdc CH~~~)&RISTICS t~~~ ~OO@Adc, ,t,. (Ic 15, 16, Types DC Current @~@~~~~ (Ic = 100 @, "~&E = 5 Vdc) . . ?!, `a.: .. s+,+?,,.'..-\> '..' Base, ,ro~? &lfferential (Ic 19, 2N2972, 20, 2N2973, .F~\\/itL 74, 7&?9~~ 75, ~~, `~, "$~: 2N2913, 2N2914, h "$ ?<*`?kc, f = 10 cqt v'ka~ >+:>*.' *!, `,, ,,, ,.:..,;.., . .., ?:j>;,,:$: VBE(ON) ~$$. *, ,.,,, *i.Jea`* \\,'`~ t, Alit$ypes ~NtG+ .:,,;: ,,,: ,,$~$,,M$All ,* *:<:tx `:..,' f = 1 kc$~~~= .. *,<::';.> IATCHING * -- J::,* t,.. ,,.?>.,. ,:: = 10 MA, VCE = 5 V, ,;,,:*" ,N~ *$! ,+4 `~?('~' . .C.c$: p,;k ,g" _ ,.,,\i~*i:f!i. b "v .* .: ,. $?,!+>{ ,l,X' ..0.010 0,002 19, 2N2972, 20, 2N297~ .J:s 2N2913, 15, 17, l~$:$N29?2, 2N2914, 16, 18{+S~~!&Z973, }\. . ,:.ir$$t$?;>~)::k ?Q>t *, All TyPeS$? ~,.** ~,;, \-*: ,. ,::,W<:,. ~i,.,::< ,,,,:",' Al&tT&<,\ . Fi@re (Ic ~~:&*:3t. ,.~ `~+\ ` fi$,q ~,:,,,,?~dc , *>=W$ t.i~j,., VCE = 5 Vdc) High Frequency (Ic = 500 PA, -- --,:: Vdc Capacitance = 5 Vdc, IE = O, f = 140 kc) (vcB , pAdc ='vdc) VCE = 5 Vdc) (Ic -,,, 10 All Types = 100 &Adc, I Init .,,@& ... ~.~' : *8.$.>:,:;,,, 0.002 ~,ON,~ Volhge (Ic & 70 I ,.,"- PAdc All Types =10 uAdc, -- All ~pes Collector -Emitter Saturation Voltxge (Ic = 1 mAd., ~ = 0.1 mAdc) (Ic 45 60 I Ma. Current All Types D!C:::I:;*VCE (Ic = 10 yAdc, .Jr -- 90 6 lCBO I r." 45 60 BVEBO 2N2913 thru 18, 2N2972 thru 77 2N2919, 2N2920, 2N2978, 2N2979 All ~es Emitter-Base Cutoff Current (vEB = 5 Vdc, Ic = O) Base-Emitter BVCEO(SUS) tkru 2N2918, 2N2972 thru 2N2977 2N2920, 2N2978, 2N2979 All ~es IE = O, TA = 150"C) Collector-Emitter (VCE = 5 Vdc, ...... M. Vol&ge Collector-Base Cutoff Current (vcB = 45 Vdc, IE = O) (VCB I BVCBO 2N2913 thru 2N2918, 2N2972 tiru 2N2977 2N2919, 2N2920, 2N2978, 2N2979 Wstaining ~ = O) Emitter-Base Breakdown (IE = 10 pAdc, Ic = O) Svmhnl _,...--, I Characteristics Collector -Base (IC = 10 pAdc, BOx ,,, ,.,.,.. ,. .s. ,., ,.,,.,., ,,,". ,,,, 955 . PHOENIX, ARIZONA 8500! Products A SUBSIDIARY OF MOTOROLA Inc. INC. DS 4522 ~