PG-DSO-14-35
Enhanced Power
Data Sheet 1 2007-09-12
Triple Half Bridges TLE 6208-3 G
1Overview
1.1 Features
Three Half-Bridges
Optimized for DC motor management applications
Delivers up to 0.6 A continuous, 1.2 A peak current
RDS ON; typ. 0.8 , @ 25 °C per switch
Output: short circuit protected and diagnosis
Overtemperature-Protection with hysteresis
and diagnosis
Standard SPI-Interface/Daisy chain capable
Very low current consumption in stand-by (Inhibit) mode (typ. 10 µA for power and
2µA for logic supply, @ 25 °C)
Over- and Undervoltage-Lockout
CMOS/TTL compatible inputs with hysteresis
No crossover current
Internal clamp diodes
Enhanced power P-DSO-Package
Programming compatibility to the TLE 5208-6
Green Product (RoHS compliant)
AEC Qualified
Functional Description
The TLE 6208-3 G is a fully protected Triple-Half-Bridge-Driver designed specifically for
automotive and industrial motion control applications. The part is based on the Siemens
power technology SPT® which allows bipolar and CMOS control circuitry in accordance
with DMOS power devices existing on the same monolithic circuitry.
In motion control up to 2 actuators (DC-Motors) can be connected to the 3 halfbridge-
outputs (cascade configuration). Operation modes forward (cw), reverse (ccw), brake
and high impedance are controlled from a standard SPI-Interface. The possibility to
control the outputs via software from a central logic, allows limiting the power dissipation.
So the standard P-DSO-14-package meets the application requirements and saves
PCB-Board-space and cost. Furthermore the build-in features like Over- and
Undervoltage-Lockout, Over-Temperature-Protection and the very low quiescent current
in stand-by mode opens a wide range of automotive- and industrial-applications.
Type Package
TLE 6208-3 G PG-DSO-14-35
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TLE 6208-3 G
Data Sheet 2 2007-09-12
1.2 Pin Configuration (top view)
Figure 1
Leadframe
8
9
10
11
12
13
14
7
6
5
4
2
3
1
Chip
GND
DO
INH
OUT 2
OUT 1
GND
GND
CLK
DI
OUT 3
V
CC
S
V
P-DSO-14-9
AEP02438
GND
CSN
PG-DSO-14-35
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TLE 6208-3 G
Data Sheet 3 2007-09-12
1.3 Pin Definitions and Functions
Pin No. Symbol Function
1GNDGround; Reference potential; internal connection to pin 7, 8 and 14;
cooling tab; to reduce thermal resistance place cooling areas on PCB
close to these pins.
2OUT3Halfbridge-Output 3;
Internally contected to Highside-Switch 3 and Lowside-Switch 3. The
HS-Switch is a Power-MOS open drain with internal reverse diode;
The LS-Switch is a Power-MOS open source with internal reverse
diode; no internal clamp diode or active zenering;
short circuit protected and open load controlled.
3VSPower Supply;
needs a blocking capacitor as close as possible to GND Value: 22 µF
electrolytic in parallel to 220 nF ceramic.
5DISerial Data Input; receives serial data from the control device; serial
data transmitted to DI is an 16bit control word with the Least
Significant Bit (LSB) being transferred first: the input has an active
pull down and requires CMOS logic level inputs;
DI will accept data on the falling edge of CLK-signal;
see Table Input Data Protocol.
4CSNChip-Select-Not Input; CSN is an active low input; serial
communication is enabled by pulling the CSN terminal low; CSN
input should only be transitioned when CLK is low; CSN has an
internal active pull up and requires CMOS logic level inputs.
6CLKSerial Clock Input; clocks the shiftregister; CLK has an internal
active pull down and requires CMOS logic level inputs.
7, 8, 14 GND Ground; see pin 1.
9DOSerial-Data-Output; this 3-state output transfers diagnosis data to
the control device; the output will remain 3-stated unless the device
is selected by a low on Chip-Select-Not (CSN);
see Table Diagnosis Data Protocol.
10 INH Inhibit Input; has an internal pull down;
device is switched in standby condition by pulling the INH terminal
low.
11 VCC Logic Supply Voltage;
needs a blocking capacitor as close as possible to GND;
Value: 10 µF electrolytic in parallel to 220 nF ceramic.
12 OUT2 Halfbridge-Output 2; see pin 2.
13 OUT1 Halfbridge-Output 1; see pin 2.
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TLE 6208-3 G
Data Sheet 4 2007-09-12
1.4 Functional Block Diagram
Figure 2 Block Diagram
Bias
Inhibit
Charge
Pump
Detect
Fault-
SPI
16 Bit
Logic
and
Latch
OV
UV
TSD
>1
11 3
1,7,8,14
2
12
13
10
4
5
6
9
GND
OUT 2
OUT 1
OUT 3
DO
CLK
DI
CSN
INH
VCC S
V
AEB02439
DRV1
DRV2
DRV3
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TLE 6208-3 G
Data Sheet 5 2007-09-12
1.5 Circuit Description
Figure 2 shows a block schematic diagram of the module. There are 3 halfbridge drivers
on the right-hand side. An HS driver and an LS driver are combined to form a halfbridge
driver in each case. The drivers communicate via the internal data bus with the logic and
the other control and monitoring functions: undervoltage (UV), overvoltage (OV),
overtemperature (TSD), charge pump and fault detect.
Two connection interfaces are provided for supply to the module: All power drivers are
connected to the supply voltage VS. These are monitored by overvoltage and
undervoltage comparators with hysteresis, so that the correct function can be checked
in the application at any time.
The logic is supplied by the VCC voltage, typ. with 5 V. The VCC voltage uses an internally
generated Power-On Reset (POR) to initialize the module at power-on. The advantage
of this system is that information stored in the logic remains intact in the event of short-
term failures in the supply voltage VS. The system can therefore continue to operate
following VS undervoltage, without having to be reprogrammed. The “undervoltage”
information is stored, and can be read out via the interface. The same logically applies
for overvoltage. “Interference spikes” on VS are therefore effectively suppressed.
The situation is different in the case of undervoltage on the VCC connection pin. If this
occurs, then the internally stored data is deleted, and the output levels are switched to
high-impedance status (tristate). The module is initialized by VCC following restart
(Power-On Reset = POR).
The 16-bit wide programming word or control word (see Table Input Data Protocol) is
read in via the DI data input, and this is synchronized with the clock input CLK. The status
word appears synchronously at the DO data output (see Table Diagnosis Data
Protocol). It is also possible to connect two TLE 6208-3 G in a daisy chain configuration.
The DO data output of one device is connected with the DI data input of the second
device. In this configuration these two devices are controlled with a single CSN chip
select and using a 32-bit wide control word.
The transmission cycle begins when the chip is selected with the CSN input (H to L). If
the CSN input changes from L to H then the word which has been read in becomes the
control word. The DO output switches to tristate status at this point, thereby releasing the
DO bus circuit for other uses.
The INH inhibit input can be used to cut off the complete module. This reduces the
current consumption to just a few µA, and results in the loss of any data stored. The
output levels are switched to tristate status. The module is reinitialized with the internally
generated POR (Power-On Reset) at restart.
This feature allows the use of this module in battery-operated applications (vehicle body
control applications).
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TLE 6208-3 G
Data Sheet 6 2007-09-12
Every driver block from DRV 1 to 3 contains a low-side driver and a high-side driver. Both
drivers are connected internally to form a half-bridge at the output. This reduction of
output pins was necessary to meet the small P-DSO-14 package.
When commutating inductive loads, the dissipated power peak can be significantly
reduced by activating the transistor located parallel to the internal freewheeling diode. A
special, integrated “timer” for power ON/OFF times ensures that there is no crossover
current.
Input Data Protocol Diagnosis Data Protocol
BIT BIT
15 OVLO on/off 15 Power supply fail
14 not used 14 Underload
13 Overcurrent SD on/off 13 Overload
12 not used 12 not used
11 not used 11 not used
10 not used 10 not used
9 not used 9 not used
8 not used 8 not used
7 not used 7 not used
6 HS-Switch 3 6 Status HS-Switch 3
5 LS-Switch 3 5 Status LS-Switch 3
4 HS-Switch 2 4 Status HS-Switch 2
3 LS-Switch 2 3 Status LS-Switch 2
2 HS-Switch 1 2 Status HS-Switch 1
1 LS-Switch 1 1 Status LS-Switch 1
0 Status Register Reset 0 Temp. Prewarning
H=ON
L=OFF
H=ON
L=OFF
Fault Result Table
Fault Diag.-Bit Result
Overcurrent (load) 13 Only the failed output is switched OFF. Function
can be deactivated by bit No. 13.
Short circuit to GND
(high-side-switch)
13 Only the failed output is switched OFF. Function
can be deactivated by bit No. 13.
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TLE 6208-3 G
Data Sheet 7 2007-09-12
Short circuit to VS
(low-side-switch)
13 Only the failed output is switched OFF. Function
can be deactivated by bit No. 13.
Temperature warning 0 Reaction of control device needed.
Temperature shut
down (SD)
All outputs OFF.
Temperature warning is set before.
Underload/Openload 14 Reaction of control device needed.
Undervoltage lockout
(UVLO)
15 All outputs OFF.
Overvoltage lockout
(OVLO)
15 All outputs OFF.
Function can be deactivated by bit No. 15.
H = failure;
L = no failure.
2 Electrical Characteristics
2.1 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VS– 0.3 40 V
Supply voltage VS– 1 V t < 0.5 s; IS > – 2 A
Logic supply voltage VCC – 0.3 5.5 V 0 V < VS < 40 V
Logic input voltages
(DI, CLK, CSN, INH)
VI– 0.3 5.5 V 0 V < VS < 40 V
0 V < VCC < 5.5 V
Logic output voltage
(DO)
VDO – 0.3 5.5 V 0 V < VS < 40 V
0 V < VCC < 5.5 V
Output voltage
(OUT 1-3)
VOUT – 0.3 40 V 0 V < VS < 40 V
Output current (cont.) IOUT1-3 A internal limited
Output current (peak) IOUT1-3 A internal limited
Note: Current limits are mentioned in the overcurrent section of electrical charateristics
Junction temperature Tj– 40 150 °C–
Storage temperature Tstg – 50 150 °C–
Fault Result Table
Fault Diag.-Bit Result
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TLE 6208-3 G
Data Sheet 8 2007-09-12
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
ESD voltage, human body
model, according to:
MIL STD 883D,
ANSI EOS\ESD S5.1
JEDEC JESD22-A114
VESD-HBM 4kV all pins
VESD-HBM-
OUT
8kV only pins 2, 12 and
13 (outputs)
ESD voltage, mashine model,
according to:
ANSI EOS\ESD S5.2
JEDEC JESD22-A115
VESD-MM 300V all pins
2.2 Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage VSVUV OFF 40 V After VS rising
above VUV ON
Supply voltage slew rate dVS /dt–10V/µs–
Logic supply voltage VCC 4.75 5.50 V
Supply voltage increasing VS– 0.3 VUV ON V Outputs in tristate
Supply voltage decreasing VS– 0.3 VUV OFF V Outputs in tristate
Logic input voltage (DI, CLK,
CSN, INH)
VI– 0.3 VCC V–
SPI clock frequency fCLK –1MHz
Junction temperature Tj– 40 150 °C–
Thermal Resistances
2 Electrical Characteristics
2.1 Absolute Maximum Ratings (cont’d)
Parameter Symbol Limit Values Unit Remarks
min. max.
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TLE 6208-3 G
Data Sheet 9 2007-09-12
Note: In the operating range, the functions given in the circuit description are fulfilled.
Junction pin Rthj-pin 30 K/W measured to
pin 1, 7, 8, 14
Junction ambient RthjA –65K/W
2.3 Electrical Characteristics
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption
Quiescent current IS–820µA INH = Low;
VS = 13.2 V
Tj = 25 °C
Quiescent current IS––30µA INH = Low;
VS = 13.2 V;
Logic-Supply current ICC –210µA INH = Low
Logic-Supply current ICC –12mASPI not active
Supply current IS–25mA
Over- and Under-Voltage Lockout
UV-Switch-ON voltage VUV ON –6.57VVS increasing
UV-Switch-OFF voltage VUV OFF 5.6 6.1 6.6 V VS decreasing
UV-ON/OFF-Hysteresis VUV HY –0.4–VVUV ONVUV OFF
OV-Switch-OFF voltage VOV OFF 34 37 40 V VS increasing
OV-Switch-ON voltage VOV ON 30 33 36 V VS decreasing
OV-ON/OFF-Hysteresis VOV HY –4–VVOV OFFVOV ON
2.2 Operating Range (cont’d)
Parameter Symbol Limit Values Unit Remarks
min. max.
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TLE 6208-3 G
Data Sheet 10 2007-09-12
Outputs OUT1-3
Static Drain-Source-On Resistance
Source (High-Side)
IOUT = – 0.5 A
RDS ON H 0.8 0.95 8V < VS < 40 V
Tj = 25 °C
–1.68V < VS < 40 V
1–VSOFF
< VS 8V
Tj = 25 °C
–2VSOFF
< VS 8V
Sink (Low-Side)
IOUT = 0.5 A
RDS ON L 0.75 0.9 8V < VS < 40 V
Tj = 25 °C
–1.58V < VS < 40 V
1–VSOFF
< VS 8V
Tj = 25 °C
–2VSOFF
< VS 8V
Leakage Current
Source-Output-Stage 1 to 3 IQLH –5 –1 µAVOUT1-3 = 0 V
Sink-Output-Stage 1 to 3 IQLL –150300µAVOUT1-3 = VS
Overcurrent
Source shutdown threshold ISDU –2 –1.3 –1 A
Sink shutdown threshold ISDL 11.22A
Current limit IOCL 2.4 4 A sink and source
Shutdown delay time tdSD 10 28 40 µs sink and source
Open Circuit/Underload Detection
Detection current IOCD 15 30 45 mA
2.3 Electrical Characteristics (cont’d)
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
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TLE 6208-3 G
Data Sheet 11 2007-09-12
Delay time tdOC 200 370 600 µs–
Output Delay Times; VS = 13.2 V; RLoad = 25 (device not in stand-by for t > 1 ms)
Source ON tdONH –820µs–
Source OFF tdOFFH –420µs–
Sink ON tdONL –720µs–
Sink OFF tdOFFL –320µs–
Dead time tDHL 13–µs tdONL tdOFFH
Dead time tDLH 15–µs tdONH tdOFFL
Output Switching Times; VS = 13.2 V; RLoad = 25 (device not in stand-by for t > 1 ms)
Source ON tON H –520µs–
Source OFF tOFF H –25µs–
Sink ON tON L –2.010µs–
Sink OFF tOFF L –1.55µs–
Clamp Diodes Forward Voltage
Upper VFU –0.91.3VIF = 0.5 A
Lower VFL –0.91.3VIF = 0.5 A
Inhibit Input
H-input voltage threshold VIH –0.520.7VCC
L-input voltage threshold VIL 0.2 0.48 VCC
Hysteresis of input voltage VIHY 50 200 500 mV
Pull down current II525100µAVI = 0.2 × VCC
Input capacitance CI–1015pF0V < VCC <
5.25 V
2.3 Electrical Characteristics (cont’d)
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
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TLE 6208-3 G
Data Sheet 12 2007-09-12
Note: Capacitances are guaranteed by design.
SPI-Interface
Delay Time from Stand-by to Data In/Power on Reset
Setup time tset ––100µs–
Logic Inputs DI, CLK and CSN
H-input voltage threshold VIH 0.52 0.7 VCC
L-input voltage threshold VIL 0.2 0.48 VCC
Hysteresis of input voltage VIHY 50 200 500 mV
Pull up current at pin CSN IICSN –50 –25 –10 µAVCSN = 0.7 × VCC
Pull down current at pin DI IIDI 10 25 50 µAVDI = 0.2 × VCC
Pull down current at pin CLK IICLK 10 25 50 µAVCLK = 0.2 × VCC
Input capacitance
at pin CSN, DI or CLK
CI 1015pF0V < VCC <
5.25 V
Note: Capacitances are guaranteed by design.
Logic Output DO
H-output voltage level VDOH VCC
– 1.0
VCC
– 0.7
–VIDOH =1 mA
L-output voltage level VDOL –0.20.4VIDOL = 1.6 mA
Tri-state leakage current IDOLK – 10 0 10 µAVCSN = VCC
0V < VDO < VCC
Tri-state input capacitance CDO 1015pFVCSN =VCC
0V < VCC <
5.25 V
Note: Capacitances are guaranteed by design.
2.3 Electrical Characteristics (cont’d)
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
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TLE 6208-3 G
Data Sheet 13 2007-09-12
Data Input Timing
Clock period tpCLK 1000 – –ns
Clock high time tCLKH 500 – –ns
Clock low time tCLKL 500 – –ns
Clock low before CSN low tbef 500 – –ns
CSN setup time tlead 500 – –ns
CLK setup time tlag 500 – –ns
Clock low after CSN high tbeh 500 – –ns
DI setup time tDISU 250 – –ns
DI hold time tDIHO 250 – –ns
Input signal rise time
at pin DI, CLK and CSN
trIN – –200ns
Input signal fall time
at pin DI, CLK and CSN
tfIN – –200ns
Data Output Timing
DO rise time trDO –50100nsCL = 100 pF
DO fall time tfDO –50100nsCL = 100 pF
DO enable time tENDO 250 ns low impedance
DO disable time tDISDO 250 ns high impedance
DO valid time tVADO 100 250 ns VDO < 0.2 VCC;
VDO > 0.7 VCC;
CL = 100 pF
Thermal Prewarning and Shutdown
Thermal prewarning junction
temperature
TjPW 120 145 170 °C–
2.3 Electrical Characteristics (cont’d)
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
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TLE 6208-3 G
Data Sheet 14 2007-09-12
Temperature prewarning
hysteresis
T –30 K
Thermal shutdown junction
temperature
TjSD 150 175 200 °C–
Thermal switch-on junction
temperature
TjSO 120 170 °C–
Temperature shutdown
hysteresis
T–30–K
Ratio of SD to PW
temperature
TjSD/TjPW 1.05 1.20
Note: Temperatures are guaranteed by design.
The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
2.3 Electrical Characteristics (cont’d)
8V<VS< 40 V; 4.75 V < VCC < 5.25 V; INH = High; all outputs open; – 40 °C<Tj< 150 °C;
unless otherwise specified
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
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TLE 6208-3 G
Data Sheet 15 2007-09-12
3 Timing Diagrams
Figure 3 Data Transfer Timing
AET02177
012345678910
11 12 13 14 15 01
++
CSN
CLK
DI
DO
HS1
e.g. Old Data Actual Data
time
New Data
Actual Status
CSN High to Low & rising edge of CLK: DO is enabled. Status information is transferred to Output Shift Register
CSN Low to High: Data from Shift-Register is transferred to Output Power Switches
Actual Data
Previous Status
DI: Data will be accepted on the falling edge of CLK-Signal
DO: State will change on the rising edge of CLK-Signal
time
time
time
time
15
14
13
1211
1098
7
6
5
4
3
21
0---------------- 01
4
012356789
12
10 11 13 14 15
01
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TLE 6208-3 G
Data Sheet 16 2007-09-12
Figure 4 Timing for Temperature Prewarning only
Figure 5 SPI-Input Timing
AET02620
CSN
CLK
DI
DO
time
CSN High to Low & CLK Stays Low: Status information of Data Bit 0 (temperature prewarning) is transfered to DO
DI: Data is not accepted
DO: Status information of Data Bit 0 (temperature prewarning) will stay as long as CSN is low
time
time
time
0
-
AET02178
DI Valid Don’t
Care
ValidDon’t Care Don’t Care
CC
V0.7
0.2 V
CC
bef
t
t
lead
CLKH
t
t
CLKL
beh
t
lag
t
t
DIHO
t
DISU
CLK
CSN
CC
V0.2
0.7 V
CC
CC
V0.2
0.7 V
CC
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TLE 6208-3 G
Data Sheet 17 2007-09-12
Figure 6 Turn OFF/ON Time
Figure 7 DO Valid Data Delay Time and Valid Time
AET02179
CSN
dON
t
20%
70%
t
rIN fIN
t
OFF
t
dOFF
t
OFF State
ON State OFF State
ON State
ON
t
Case 1
Case 2
Ι
OUT
OUT
Ι
50%
50%
70%
20%
20%
70%
50%
AET02180
CLK
t
rIN fIN
t
(low to high)
rDO
t
DO
DO (high to low)
fDO
t
t
VADO
10 ns
50%
CC
V0.7
0.2 V
CC
CC
V0.7
V
CC
0.2
CC
V0.7
V
CC
0.2
_
<
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TLE 6208-3 G
Data Sheet 18 2007-09-12
Figure 8 DO Enable and Disable Time
AET02181
CSN
t
fIN rIN
t
DO
DO
10 ns
t
ENDO
ENDO
t
DISDO
t
t
DISDO
V
CC
to
Pullup
Pulldown
to GND
10 k
50%
50%
50%
0.7 V
CC
CC
V0.2
_
<
10 k
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TLE 6208-3 G
Data Sheet 19 2007-09-12
Figure 9 Application Circuit
Bias
Inhibit
Charge
Pump
Detect
Fault-
SPI
16 Bit
Logic
and
Latch
OV
UV
TSD
>1
11 3
1,7,8,14
2
12
13
10
4
5
6
9
GND
OUT 2
OUT 1
OUT 3
DO
CLK
DI
CSN
V
CC S
V
AEB02441
DRV1
DRV2
DRV3
INH
P
µ
GND
CC
V
RWD
Q
Reset
Watchdog
D
TLE 4278G Ι
D01
1N4001
D02
Z39
S
C
10 F
µ
47 nF
C
D
µ
22 F
C
Q
V
S
= 12V
M
M
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TLE 6208-3 G
Data Sheet 20 2007-09-12
4 Package Outlines
Figure 10 PG-DSO-14-35 (Plastic Dual Small Outline)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).
GPS09222
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
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TLE 6208-3 G
Data Sheet 21 2007-09-12
Revision History
Version Date Changes
Rev. 1.1 2007-09-12 RoHS-compliant version of the TLE 6208-3 G
All pages: Infineon logo updated
Page 1:
“added AEC qualified” and “RoHS” logo, “Green Product
(RoHS compliant)” and “AEC qualified” statement added to
feature list, package name changed to RoHS compliant
versions, package picture updated, ordering code
removed
Page 20:
Package name changed to RoHS compliant versions,
“Green Product” description added
Page 21-22:
added Revision History and Legal Disclaimer
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TLE 6208-3 G
Data Sheet 22 2007-09-12
Edition 2007-08-20
Published by
Infineon Technologies AG
81726 Munich, Germany
©
9/14/07 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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