FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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300V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT223
Features
BVCEO > -300V
I
C = -1A high Continuous Collector Current
I
CM = -2A Peak Pulse Current
Low Saturation Voltage VCE(sat) < -240mV @ -1A
h
FE specified up to -2A for a high gain hold up
Complementary NPN Type: FZT857
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT957TA AEC-Q101 FZT957 7 12 1,000
FZT957TC AEC-Q101 FZT957 13 12 4,000
FZT957QTA Automotive FZT957 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT957 = Product Type Marking Code
SOT223
Top View Device S
y
mbol Top View
Pin-Out
Green
C
E
B
FZT
951
FZT
957
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -330 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current IC -1 A
Peak Pulse Current ICM -2 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
(Note 6)
PD
3.0
24 W
mW /°C
(Note 7) 1.6
12.8
Thermal Resistance, Junction to Ambient (Note 6) R
θ
JA 42
°C/W
(Note 7) R
θ
JA 78
Thermal Resistance Junction to Lead (Note 8) R
θ
JL 8.84
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm with 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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Thermal Characteristics and Derating Information
100m 1 10 100
10m
100m
1
10
Single Pulse. Tamb=2C
52mmX52mm
single sided 2oz Cu
VCE(sat)
Limit
10s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25mmX25mm
single sided 1oz Cu
52mmX52mm
single sided 2oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40 52mmX52mm
single sided 2oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. Tamb=25°C
52mmX52mm
single sided 2oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -330 -440 - V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 10) BVCER -330 -440 - V
IC = -1µA, RB 1k
Collector-Emitter Breakdown Voltage (Note 10) BVCEO -300 -400 - V
IC = -1mA
Emitter-Base Breakdown Voltage BVEBO -7 -8 - V
IE = -100µA
Collector Cutoff Current ICBO -
-
<1
-
-50
-1
nA
µA
VCB = -300V
VCB = -300V, TA = +100°C
Collector Cutoff Current ICER
R 1k
-
-
<1
-
-50
-1
nA
µA
VCB = -300V
VCB = -300V, TA = +100°C
Emitter Cutoff Current IEBO - <1 -10 nA
VEB = -6V
DC current transfer Static ratio (Note 10) hFE
100 200 -
-
IC = -10mA, VCE = -10V
100 200 300 IC = -0.5A, VCE = -10V
90 170 - IC = -1A, VCE = -10V
- 10 - IC = -2A, VCE = -10V
Collector-Emitter Saturation Voltage (Note 10) VCE(sat)
- -60 -100
mV
IC = -100mA, IB = -10mA
- -110 -165 IC = -500mA, IB = -100mA
- -170 -240 IC = -1A, IB = -300mA
Base-Emitter Saturation Voltage (Note 10) VBE
(
sat
)
- -910 -1150 mV
IC = -1A, IB = -300mA
Base-Emitter Turn-on Voltage (Note 10) VBE
(
on
)
- -750 -1020 mV
IC = -1A, VCE = -10V
Transitional Frequency (Note 10) fT - 85 - MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output capacitance Cobo - 23 - pF
VCB = -20V, f = 1MHz
Switching Time tON - 108 - ns VCC = -100V, IC = -500mA,
IB1 = -IB2 = -50mA
tOFF - 2500 -
Note: 10. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e4.60
e12.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
A1
A
X2
C1
C2
X1
Y2
Y1
FZT957
Datasheet Number: DS33191 Rev. 4 - 2
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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