== 7 SAMSUNG SEMICONOUCTOR INC 14E 0 Mf zaeuaua ooozera a GENERAL PURPOSE TRANSISTOR. rt. | aX - \A | . . SOT-23 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol - Rating Unit Collector-Base Voltage Vrao 32 v Collector-Emitter Voltage Voeo 32 Vv : Emitter-Base Voltage a " 50 V ] ff . Collector Current I 100 mA --L Collector Dissipation Po : 350 mw Storage Temperature ~ stg =, 150 C | Refer to MMBT5086 for graphs 1. Base 2. Emitter 3, Collector ELECTRICAL CHARACTERISTICS (T, =25C) - T Characteristic Symbo! + Test Condition . Min Max Unit Collector-Emitter Breakdown Voltage | BV ceo lc=2mA, ig=0 32 Vv Emitter-Base Breakdown Voltage BVeso le=1pA, k=O 5 Vv Collector Cutoff Current lees Vce=32V, Vae=O 20 nd DC Current Gain Dre Vce=5V, le=10nA 20 Vee =5V, Ic=2mA 140 310 . Vee=1V, ic=50mA 80 Collector-Emitter Saturation Voltage Vee (Sat) | lc=10mA, Is=0.25mA 0,25 Vv Ic=50mA, la=1.25mA . 0.65 Vv Base-Emitter Saturation Voltage Vee (sat} | lk=10mA, lp=0.25mA 0.6 0.85 v . kk=50mA, ls=1.25mA 0.68 1,05 Vv Base-Emitter On Voltage Voe (on) b=2mA, Ver =5V _ 0.6 0.75 Vv Output Capacitance Cob Vea= 10V, t=O 6 pF : f=1MHz Nolse Figure NF lo=0.2MA, Vce=5V 8 dB Rs=2KN, f=1KHz . , Turn On Time ton +} c= 10mA, Ip: =1mA . 150 ns Turn Off Time , toff fpo=1MA, Ves=3.6V 800 ns RL=9900 | Marking Fy - BB - | a oy 8 ce SAMSUNG SEMICONDUCTOR 483