NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer applications, they are available in versions from 700 to 1200 V and deliver very high efficiency with exceptional reliability. Key Features } Planar technology - Market benchmark process technology - Best cost-performance ratio of all technologies } High voltage capability - VCESM up to 1200 V - Suitable for push-pull topologies } Fast switching and low VCEsat - Low fall time (t f) at turn-off reduces switching loss - Low saturation voltage (VCEsat) reduces conduction loss } Well-controlled hFE - hFE distribution is well controlled by design and production - Tight parameter control reduces the need for banding or selection - Design-in to customers' circuits is easy - Design-in for life - extended reliability } Integrated diode versions - Reduced component count - Simpler circuits - Improved performance and reliability Key Benefits } Competitive and customer-oriented product portfolio } Experienced development team with deep understanding on device physics } Excellent application know-how and instant technical support } Well-controlled manufacturing and robust supply chain The NXP BUJ and PHx series of high voltage power bipolar transistors use planar technology that delivers industry-leading cost-performance ratios. The high-voltage (up to 1200 V) capability is suitable for push-pull technologies. Fast switching times and low VCEsat ratings combine to reduce switching and conduction losses. The well-controlled hFE parameter reduces the need for banding or selection, making design-in easier and extending reliability. Versions with integrated diodes reduce component count and simplify the design even further. How to design the base drive Figure 1 shows a typical CFL drive circuit. Minimum power loss can be achieved by choosing the optimum base drive for the high voltage transistors. Figure 2 shows power loss as a function of base drive. Weak base drive (too low a base current) causes too high a saturation voltage (VCEsat), which results in higher than necessary conduction loss. Strong base drive (too high a base current) causes too much stored charge in the transistor when it's in the on-state. As long as the transistor is conducting, that's not a problem, but when the transistor has to be turned off, the excess charge that needs to be removed from the base can cause a longer fall time and higher switching losses. The base drive is normally optimized for a `typical' transistor - that is, a transistor from normal production with a typical gain (hFE). Figure 3 shows how turn-off Ib affects the switching loss. All charge stored in the junction when the transistor is conducting should be removed again at turn-off. Apply a negative base current to ensure quick turn-off. The time needed to remove the base collector charge is called the storage time and depends on the amount of negative bias applied to the base during turn-off. The storage time directly influences the circuit's oscillating frequency. That is, a longer storage time leads to a longer delay and a lower frequency. As a result, transistor storage time plays an integral role in final circuit optimization. } If, when mains power is removed, the lamp extinguishes but tries to restart a few times, resulting in flickering, then the oscillator is probably stalling prematurely, before the DC rail voltage has reduced to zero. Increase the base drive. Once the base drive has been adjusted, recheck for acceptable operation and temperature rise at maximum supply voltage. Once operation at low voltage has been optimized, acceptable operation at high voltage usually follows. The influence of gain on power loss The production spread of high voltage transistors causes some variation in their gain hFE (this variation is already very low for NXP transistors). As the gain has a direct effect on the optimal base drive for an individual transistor, a deviation from the typical gain value can cause the circuit to operate below its optimal point. This can be resolved by adjusting the base drive for every transistor in every individual TL ballast or CFL, but in a production environment this is normally not a feasible solution. Figure 4. Power loss as a function of gain The following is a recommended strategy for optimizing base drive for a given transistor. First, select typical transistors (that is, with a typical hFE) and observe their operation. Customer focus NXP offers a roadmap of continuous process development and customer-driven innovation. Our experienced development teams have a deep knowledge and experience of bipolar technology, and we have specialists who proactively discuss technical details with customers. We offer complete testing capabilities at our application labs, located in Europe and China. Furthermore, our well-controlled manufacturing processes and robust supply chain make us a trusted partner for quality, support and lead time. If high and low gain transistor samples are available, the above tests can be repeated for further fine tuning of the base drive. (Note that high and low gain limit samples are not possible with NXP standard production, due to the tight process control. These samples are only available at initial product development, when high and low gain samples are "forced" High Voltage Power Bipolar Transistors for lighting, SMPS and industrial applications VCESM (V) IC(DC) (max) (A) 25 oC ind. tf (typ) (ns) 1 80 1 80 700 Figure 2. Power loss as a function of base drive. Complete portfolio NXP supports all the leading applications for energy-efficient lighting, including CFL, HID igniters, HF-TL, electronic transformers for low-voltage lighting, and dimmers. We specialize in best-in-class efficiency and low-power discrete solutions. In addition to the high voltage transistors, we offer best-in-class PFC diodes, SCRs, and triacs. } If, at minimum supply voltage, the transistor temperature rise increases dramatically (possibly heading toward thermal runaway), and is often accompanied by premature turn-on of the transistors and very high turn-on losses, then the transistor turn-off drive is probably too weak. Increase the base drive. Figure 3. Effect of base drive on switching loss. Figure 1. Typical CFL drive circuit. by artificial adjustment of the production process.) With typical transistors, however, testing with high and low gain transistors is not as critical as the initial optimization. Any further changes to the base drive are usually minor, if needed at all. Once the circuit has been optimized for an NXP transistor, any individual transistor of the same type, with any hFE will operate without problems in the application. } If the lamp goes off or flickers at minimum supply voltage (e.g. 150 V for a 230 V circuit), the oscillator is probably stalling. Increase the base drive. @ IC (A) hFE (typ) @ IC (A) SOT54 (TO92) 1 7.5 0.8 BUJ100LR 1 7.5 0.8 PHE13003A SOT78 (TO220AB) SOT186A (isolated TO220AB) BUJ103A BUJ103AX 1 50 1 14 0.75 BUJ100 1.5 100 0.5 9 1 PHE13003C 1.5 100 0.5 9 1 PHD13003C* 4 30 2 12.5 3 4 30 2 12.5 3 4 100 2 17 2 PHE13005 4 100 2 17 2 PHD13005* 8 20 5 11 4 BUJ105A 8 20 5 11 4 BUJ103AD PHE13005X PHD13005D* BUJ105AB BUJ105AD BUJD105AD* 8 40 5 9 5 20 5 11 6 BUJ106A 12 100 5 6min - 30max 8 PHE13009 PHE13007 BUJ303A 1000 5 145 2.5 12 3 1050 5 200 2.5 10.5 3 BUJ303B 1200 6 170 2.5 15.5 3 BUJ403A Types in bold red represent new products Package drawings are not to scale SOT428 (DPAK) BUJD103AD* 10 * Integrated diode SOT404 (D2PAK) BUJ series part numbering BUJ series part numbering Type Number PHx series part numbering PHx series part numbering Type Number BUJD103AD D = Transistor + internal diode Package Identifier: X B D R =TO220AB (SOT78) = SOT186A = D2PAK (SOT404) = DPAK (SOT428) = TO92 (SOT54) reverse pinning PHE13003C transistor E D = Transistor + internal diode Current Range: 3 5 7 9 = 1.0 - 2.0 Amp = 4 Amp = 8 Amp =12 Amp Package Identifier: A = 1 Amp series in TO92 (SOT54) C = 1.5 Amp series in TO92 (SOT54) X = SOT186A - = TO220AB (SOT78) D = DPAK (SOT428) www.nxp.com (c)2009 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: November 2009 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number: 9397 750 16836 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.