Key Benefits
} Competitive and customer-oriented product portfolio
} Experienced development team with deep understanding
on device physics
} Excellent application know-how and instant technical
support
} Well-controlled manufacturing and robust supply chain
The NXP BUJ and PHx series of high voltage power bipolar
transistors use planar technology that delivers
industry-leading cost-performance ratios. The high-voltage
(up to 1200 V) capability is suitable for push-pull
technologies. Fast switching times and low VCEsat ratings
combine to reduce switching and conduction losses.
The well-controlled hFE parameter reduces the need
for banding or selection, making design-in easier and
extending reliability. Versions with integrated diodes reduce
component count and simplify the design even further.
High voltage power bipolar
transistors for lighting
NXP high voltage power
bipolar transistors
BUJ & PHx series
Key Features
} Planar technology
- Market benchmark process technology
- Best cost-performance ratio of all technologies
} High voltage capability
- VCESM up to 1200 V
- Suitable for push-pull topologies
} Fast switching and low VCEsat
- Low fall time (tf) at turn-off reduces switching loss
- Low saturation voltage (VCEsat) reduces conduction loss
} Well-controlled hFE
- hFE distribution is well controlled by design and
production
- Tight parameter control reduces the need for banding or
selection
- Design-in to customers’ circuits is easy
- Design-in for life – extended reliability
} Integrated diode versions
- Reduced component count
- Simpler circuits
- Improved performance and reliability
Our high voltage power bipolar transistors are part of our industry-leading portfolio
for energy-efficient lighting. Designed to support electronic ballast and transformer
applications, they are available in versions from 700 to 1200 V and deliver very high
efficiency with exceptional reliability.
How to design the base drive
Figure 1 shows a typical CFL drive circuit. Minimum power loss
can be achieved by choosing the optimum base drive for the
high voltage transistors.
Figure 2 shows power loss as a function of base drive. Weak
base drive (too low a base current) causes too high a saturation
voltage (VCEsat), which results in higher than necessary
conduction loss. Strong base drive (too high a base current)
causes too much stored charge in the transistor when it’s in
the on-state. As long as the transistor is conducting, that’s not
a problem, but when the transistor has to be turned off, the
excess charge that needs to be removed from the base can
cause a longer fall time and higher switching losses. The base
drive is normally optimized for a ‘typical’ transistor – that is,
a transistor from normal production with a typical gain (hFE).
Figure 3 shows how turn-off Ib affects the switching loss.
All charge stored in the junction when the transistor is conducting
should be removed again at turn-off. Apply a negative base
current to ensure quick turn-off. The time needed to remove the
base collector charge is called the storage time and depends on
the amount of negative bias applied to the base during
turn-off. The storage time directly influences the circuit’s oscillating
frequency. That is, a longer storage time leads to a longer delay
and a lower frequency. As a result, transistor storage time plays
an integral role in final circuit optimization.
The influence of gain on power loss
The production spread of high voltage transistors causes
some variation in their gain hFE (this variation is already very
low for NXP transistors). As the gain has a direct effect on the
optimal base drive for an individual transistor, a deviation from
the typical gain value can cause the circuit to operate below
its optimal point. This can be resolved by adjusting the base
drive for every transistor in every individual TL ballast or CFL,
but in a production environment this is normally not a feasible
solution.
The following is a recommended strategy for optimizing base
drive for a given transistor. First, select typical transistors (that
is, with a typical hFE) and observe their operation.
} If the lamp goes off or flickers at minimum supply voltage
(e.g. 150 V for a 230 V circuit), the oscillator is probably
stalling. Increase the base drive.
} If, when mains power is removed, the lamp extinguishes but
tries to restart a few times, resulting in flickering, then the
oscillator is probably stalling prematurely, before the DC rail
voltage has reduced to zero. Increase the base drive.
} If, at minimum supply voltage, the transistor temperature rise
increases dramatically (possibly heading toward thermal
runaway), and is often accompanied by premature turn-on of
the transistors and very high turn-on losses, then the transistor
turn-off drive is probably too weak. Increase the base drive.
Once the base drive has been adjusted, recheck for acceptable
operation and temperature rise at maximum supply voltage.
Once operation at low voltage has been optimized, acceptable
operation at high voltage usually follows.
If high and low gain transistor samples are available, the above
tests can be repeated for further fine tuning of the base drive.
(Note that high and low gain limit samples are not possible
with NXP standard production, due to the tight process
control. These samples are only available at initial product
development, when high and low gain samples are “forced”
by artificial adjustment of the production process.) With typical
transistors, however, testing with high and low gain transistors
is not as critical as the initial optimization. Any further changes
to the base drive are usually minor, if needed at all. Once the
circuit has been optimized for an NXP transistor, any individual
transistor of the same type, with any hFE will operate without
problems in the application.
Complete portfolio
NXP supports all the leading applications for energy-efficient
lighting, including CFL, HID igniters, HF-TL, electronic
transformers for low-voltage lighting, and dimmers. We
specialize in best-in-class efficiency and low-power discrete
solutions. In addition to the high voltage transistors, we offer
best-in-class PFC diodes, SCRs, and triacs.
Customer focus
NXP offers a roadmap of continuous process development and
customer-driven innovation. Our experienced development
teams have a deep knowledge and experience of bipolar
technology, and we have specialists who proactively discuss
technical details with customers.
We offer complete testing capabilities at our application labs,
located in Europe and China. Furthermore, our well-controlled
manufacturing processes and robust supply chain make us a
trusted partner for quality, support and lead time.
High Voltage Power Bipolar Transistors for lighting,
SMPS and industrial applications
* Integrated diode
Types in bold red represent new products
Package drawings are not to scale
VCESM
(V)
IC(DC) (max)
(A)
25 oC
ind. tf (typ)
(ns)
@ IC
(A)
hFE (typ) @ IC
(A)
SOT54
(TO92)
SOT78
(TO220AB)
SOT186A
(isolated
TO220AB)
SOT404
(D2PAK)
SOT428
(DPAK)
700
180 17.5 0.8 BUJ100LR
180 17.5 0.8 PHE13003A
150 114 0.75 BUJ100
1.5 100 0.5 9 1 PHE13003C
1.5 100 0.5 9 1 PHD13003C*
430 212.5 3BUJ103A BUJ103AX BUJ103AD
430 212.5 3BUJD103AD*
4100 217 2PHE13005 PHE13005X
4100 217 2PHD13005* PHD13005D*
820 511 4BUJ105A BUJ105AB BUJ105AD
820 511 4BUJD105AD*
840 595 PHE13007
10 20 511 6BUJ106A
12 100 5 6min - 30max 8 PHE13009
1000 5145 2.5 12 3BUJ303A
1050 5200 2.5 10.5 3BUJ303B
1200 6170 2.5 15.5 3BUJ403A
BUJ series part numbering
BUJ series part numbering
BUJD103AD
Package Identifier:
- =TO220AB (SOT78)
X = SOT186A
B = D
2
PAK (SOT404)
D = DPAK (SOT428)
R = TO92 (SOT54) reverse pinning
Type Number
D = Transistor + internal diode
PHx series part numbering
PHx series part numbering
PHE13003C
Package Identifier:
A = 1 Amp series in TO92 (SOT54)
C = 1.5 Amp series in TO92 (SOT54)
X = SOT186A
- = TO220AB (SOT78)
Type Number
Etransistor
D = Transistor +
internal diode
Current Range:
3 = 1.0 – 2.0 Amp
5 = 4 Amp
7 = 8 Amp
9 =12 Amp
D = DPAK (SOT428)
Figure 1. Typical CFL drive circuit.
Figure 2. Power loss as a function of base drive.
Figure 4. Power loss as a function of gain
Figure 3. Effect of base drive on switching loss.
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©2009 NXP B.V.
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Date of release: November 2009
Document order number: 9397 750 16836
Printed in the Netherlands
