PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements. Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs. Please feel free to contact our sales office. Features Applications l High sensitivity l Uniform element sensitivity l Low cross-talk l Low noise l CD, DVD, MO (Magneto-Optical disc) signal pickups l Laser beam alignment l Various position detection applications General ratings / Absolute maximum ratings Type No. S2721-02 S3096-02 S4204 S8703 Dimensional outline Active area Element gap (mm) 1 x 3 / 2 elements 1.2 x 3 / 2 elements (m) 5 30 1 x 2 / 2 elements Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) 20 -25 to +85 -40 to +100 20 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted, per 1 element) Type No. S2721-02 S3096-02 S4204 S8703 Spectral response range Peak sensitivity wavelength p (nm) 320 to 1060 (nm) 900 320 to 1100 960 Photo sensitivity =p Dark current ID VR=10 V all elements (A/W) 0.56 0.58 Typ. (nA) 0.1 0.05 Max. (nA) 2.0 0.5 0.65 0.1 1.0 Temp. coefficient of ID TCID (times/C) 1.15 Cut-off frequency fc VR=10 V RL=50 =780 nm -3 dB Terminal capacitance Ct VR=10 V f=1 MHz (MHz) 50 25 (pF) 30 3 5 NEP VR=10 V (W/Hz1/2) 6.4 x 10-15 7.2 x 10-15 8.7 x 10-15 1 S2721-02, S3096-02, S4204, S8703 Si PIN photodiode Spectral response Photo sensitivity temperature characteristics (Typ. Ta=25 C) 0.7 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 0.6 0.5 S4204, S8703 S2721-02 0.4 0.3 0.2 0.1 0 200 400 600 800 (Typ.) +1.5 S3096-02 +1.0 S2721-02 +0.5 0 S3096-02, S4204 S8703 -0.5 200 1000 WAVELENGTH (nm) 400 600 800 1000 WAVELENGTH (nm) KMPDB0134EB Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 C) 1 nA 100 pA S3096-02 S2721-02 10 pA 0.1 1 10 100 S2721-02 10 pF S3096-02 S4204, S8703 1 pF 0.1 1 10 100 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KMPDB0136EB 2 (Typ. Ta=25 C, f=1 MHz) 100 pF TERMINAL CAPACITANCE DARK CURRENT S4204, S8703 1 pA 0.01 KMPDB0135EC KMPDB0137EB S2721-02, S3096-02, S4204, S8703 Si PIN photodiode Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1) S2721-02 S3096-02 3 2.54 0.8 0.25 5.2 0.2 a b 1.8 PHOTOSENSITIVE SURFACE 10 3.0 14.5 0.3 PHOTOSENSITIVE SURFACE 0.5 1.0 5 0.005 1.0 DETAILS OF PHOTODIODE 3 ANODE a CATHODE COMMON ANODE b CATHODE COMMON 4.5 0.3 a 2.0 0.25 0.7 5 4.8 * 0.6 0.5 5 5.0 0.2 (INCLUDING BURR) 5.5 * 5.4 * 4.0 * (0.8) 5.0 0.4 3.0 4.5 * ACTIVE AREA 0.03 (1.0) (1.0) (0.8) 5.0 0.4 10 2.54 5.6 0.2 (INCLUDING BURR) 0.7 0.5 4.1 0.2 (INCLUDING BURR) 4.7 * ACTIVE AREA 10 4.6 0.2 (INCLUDING BURR) b 1.2 7.5 5 DETAILS OF PHOTODIODE Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 ANODE a CATHODE COMMON ANODE b CATHODE COMMON KMPDA0118EA Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 KMPDA0119EA S4204 S8703 5 4.0 * (1.25) 4.2 0.2 (INCLUDING BURR) 10 4.8 * 2.0 0.4 2.0 DEPTH 0.15 MAX. 0.5 b 0.8 1.8 1.27 5 ANODE a CATHODE COMMON ANODE b CATHODE COMMON 1.27 0.8 0.25 1.0 DETAILS OF PHOTODIODE 5.0 MAX. (INCLUDING BURR) Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 4.7 * 10 PHOTOSENSITIVE SURFACE a b 1.0 0.5 13.8 0.3 PHOTOSENSITIVE SURFACE 10 0.5 (0.8) a 0.25 5 4.9 0.4 0.02 4.0 * 10 (0.8) (1.25) (1.25) 1.8 4.7 * ACTIVE AREA 4.7 * 2.54 5.0 0.2 (INCLUDING BURR) 0.6 0.5 (0.8) 4.9 0.4 5.0 MAX. (INCLUDING BURR) ACTIVE AREA 4.9 0.25 4.1 0.2 (INCLUDING BURR) 0.02 KMPDA0120EA 2.0 5 4.8 * ANODE a CATHODE COMMON ANODE b DETAILS OF PHOTODIODE Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2 2 KMPDA0181EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1039E03 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Dec. 2003 DN 3