Features
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High sensitivity
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Uniform element sensitivity
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Low cross-talk
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Low noise
Applications
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CD, DVD, MO (Magneto-Optical disc) signal pickups
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Laser beam alignment
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Various position detection applications
PHOTODIODE
Si PIN photodiode
Dual-element, plastic package photodiode
S2721-02, S3096-02, S4204, S8703
S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low
noise, these photodiodes have very low cross-talk between the elements.
Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs.
Please feel free to contact our sales office.
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■ General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area Element
g
a
p
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No. Dimensional
outline
(mm) (µm) (V) (°C) (°C)
S2721-02 ➀1 × 3 / 2 elements 5
S3096-02 ➁1.2 × 3 / 2 elements 30
S4204 ➂
S8703 ➃1 × 2 / 2 elements 20
20 -25 to +85 -40 to +100
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)
Dark
current
ID
VR=10 V
all elements
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo
sensitivity
λ=λp
Temp.
coefficient
of
ID
TCID
Cut-off
frequency
fc
VR=10 V
RL=50 Ω
λ=780 nm
-3 dB
Terminal
capacitance
Ct
VR=10 V
f=1 MHz
NEP
VR=10 V
Type No.
(nm) (nm) (A/W)
Typ.
(nA)
Max.
(nA) (times/°C) (MHz) (pF) (W/Hz1/2)
S2721-02 320 to 1060 900 0.56 0.1 2.0 50 6.4 × 10-15
S3096-02 0.58 0.05 0.5 25 57.2 × 10-15
S4204
S8703
320 to 1100 960 0.65 0.1 1.0
1.15
30 3 8.7 × 10-15
Si PIN photodiode
S2721-02, S3096-02, S4204, S8703
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
1 pF
10 pF
0.1 1 10 100
S2721-02
S3096-02
S4204, S8703
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 ˚C)
100 pA
1 nA
10 pA
1 pA
0.01 0.1 1 10 100
S2721-02 S3096-02
S4204, S8703
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200 400 600 800 1000
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 ˚C)
S4204, S8703 S2721-02
S3096-02
0
TEMPERATURE COEFFICIENT (%/˚C)
200 400 600 800 1000
WAVELENGTH (nm)
+1.0
+0.5
(Typ.)
+1.5
-0.5
S3096-02, S4204
S8703
S2721-02
■ Spectral response ■ Photo sensitivity temperature
characteristics
■ Dark current vs. reverse voltage ■ Terminal capacitance vs. rev erse voltage
KMPDB0137EB
KMPDB0134EB
KMPDB0136EB
KMPDB0135EC
2
Si PIN photodiode
S2721-02, S3096-02, S4204, S8703
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . How ever, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.
Cat. No. KMPD1039E03
Dec. 2003 DN
Shaded area indicates burr.
Chip position accuracy with respect
to the package dimensions marked *
X, Y≤±0.2
θ≤±2˚
1.8
0.5
10˚
5˚
ANODE a
CATHODE COMMON
ANODE b
5.0 MAX.
4.7 *
0.5
2.0
DEPTH 0.15 MAX.
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
5.0 MAX.
4.7 *
4.8 *
10˚
5˚
(INCLUDING BURR)
(INCLUDING BURR)
4.2 ± 0.2
(INCLUDING BURR)
(0.8) (1.25)
4.0 *4.9 ± 0.25
0.4
1.27 1.27 0.8 0.25
DETAILS OF
PHOTODIODE
0.02
2.0
1.0
ba
4.6 ± 0.2
(INCLUDING BURR)
ACTIVE AREA
Chip position accuracy with respect
to the package dimensions marked *
X, Y ≤ ±0.2
θ ≤ ±2 ˚
0.7
0.5
2.54
(0.8) (1.0)
5.0 ± 0.4 4.5 *
(1.0) (0.8)
5.0 ± 0.4
14.5 ± 0.3
PHOTOSENSITIVE
SURFACE
5˚
0.25
3˚
0.7
1.0
2.0
5.6 ± 0.2
(INCLUDING BURR)
5.4 *
3˚
10˚
DETAILS OF
PHOTODIODE
3.0
0.005
1.0
5.5 *
ab
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
4.1 ± 0.2
(INCLUDING BURR)
0.02
2.0
2.54
(0.8)
(1.25)
4.9 ± 0.4 4.0 *
(1.25)
(0.8)
13.8 ± 0.3
4.9 ± 0.4
5˚
0.25
10˚
0.5
0.8
1.8
5.0 ± 0.2
(INCLUDING BURR)
4.7
*
4.8
*
5˚
10˚
DETAILS OF
PHOTODIODE
1.0
0.6
0.5
PHOTOSENSITIVE
SURFACE
a
b
Chip position accuracy with respect
to the package dimensions marked *
X, Y ≤ ±0.2
θ ≤ ±2 ˚
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
4.1 ± 0.2
(INCLUDING BURR)
0.5
2.54
5.2 ± 0.2
4.0 * 0.8
0.25
4.5 ± 0.3
PHOTOSENSITIVE
SURFACE
5˚
10˚
5.0 ± 0.2
(INCLUDING BURR)
4.8 *
4.7 *
DETAILS OF
PHOTODIODE
3.0
1.2
0.03
7.5˚ ± 5˚
1.8
0.6
0.5
a
b
10˚
5˚
Chip position accuracy with respect
to the package dimensions marked *
X, Y ≤ ±0.2
θ ≤ ±2 ˚
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
KMPDA0118EA
■ Dimensional outlines (unit: mm, tolerance unless
otherwise noted: ±0.1)
KMPDA0119EA
KMPDA0120EA
➀ S2721-02
➂ S4204
➁ S3096-02
KMPDA0181EA
➃ S8703
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