CY7C1024AV33
ADVANCE INFORMATION
5
Switchi n g C h ar acteris t i cs[5] Over the Operating Range
7C1024AV33-9 7C1024AV33-10 7C1024AV33-12 7C1024AV33-15
Parameter Description[3] Min. Max. Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC Read Cycle Time 9 10 12 15 ns
tAA Address to Data Valid 9 10 12 15 ns
tOHA Data Hold from Address Change 3 3 3 3 ns
tACE CE active to Data Valid 9 10 12 15 ns
tDOE OE LOW to D a ta Valid 4 5 6 7 ns
tLZOE OE LOW to Low Z 0 0 0 0 ns
tHZOE OE HIGH to High Z[6, 7] 4566ns
tLZCE CE active to Low Z[7] 3333ns
tHZCE CE inactive to High Z[6, 7] 5566ns
tPU CE active to Power-Up 0 0 0 0 ns
tPD CE inactive to Power-Down 9 10 12 15 ns
WRITE CYCLE[8, 9]
tWC Write Cycle Time 9 10 12 15 ns
tSCE CE active to Write End 8 8 9 9 ns
tAW Address Set-Up to Write End 7 7 8 8 ns
tHA Address Hold from Write End 0 0 0 0 ns
tSA Address Set-Up to Write Start 0 0 0 0 ns
tPWE WE Pulse Width 7 7 8 8 ns
tSD Data Se t-U p to W r ite En d 5 5 6 6 ns
tHD Data Hold from Write End 0 0 0 0 ns
tLZWE WE HIGH to Low Z[7] 3333ns
tHZWE WE LOW to High Z[6, 7] 5566ns
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30- pF lo ad capaci tance .
6. tHZOE, tHZCE, and tHZWE are specified with a l oad capaci tance of 5 p F as in part (b) of A C Test Loads. Transition is measured ±500 mV from s teady- state vol tage .
7. At any given temperature and voltage condition, tHZCE is l ess than t LZCE, tHZOE is less than tLZOE, and tHZWE is les s tha n tLZWE f or an y given d e vice .
8. The internal write time of the memory is defined by the overlap of CE LO W and WE LOW . CE and WE mus t be LO W t o ini tiate a write , and the tr ansi tion of any o f these
signals can t erminate t he write. The input dat a s et-up and hold ti ming shoul d be ref erenc ed t o the leading edg e of t he si gnal tha t terminat es the w rite.
9. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.