1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
16 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BSS 64 Switching Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BSS 64
Collector-Emitter-voltage B open VCE0 80 V
Collector-Base-voltage E open VCB0 120 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 250 mA
Peak Base current – Basis-Spitzenstrom IBM 100 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 90 V ICB0 – – 100 nA
IE = 0, VCB = 90 V, Tj = 150/CI
CB0 – – 50 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 – 1 nA 200 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 4 mA, IB = 0.4 mA VCEsat – – 150 mV
IC = 50 mA, IB = 15 mA VCEsat – – 200 mV
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
17
01.11.2003
Switching Transistors BSS 64
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 1 V, IC = 1 mA hFE –60–
VCE = 1 V, IC = 10 mA hFE 20 80 –
VCE = 1 V, IC = 20 mA hFE –55–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 25 mA, f = 100 MHz fT60 MHz 105 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 3 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BSS 63
Marking - Stempelung BSS 64 = AM
