BAS40-07W 3 Silicon Schottky Diode 4 General-purpose diode for high-speed switching Circuit protection Voltage clamping 2 High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 - Package - SOT343 Maximum Ratings Parameter Symbol Diode reverse voltage VR 40 Forward current IF 120 Surge forward current, t 10 ms IFSM 200 Total power dissipation Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Value Unit V mA TS 118C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 125 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-23-2001 BAS40-07W Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 40 - - DC Characteristics Breakdown voltage V(BR) V I(BR) = 10 A Reverse current IR A VR = 30 V - - 1 VR = 40 V - - 10 Forward voltage mV VF IF = 1 mA 250 310 380 IF = 10 mA 350 450 500 IF = 40 mA 600 720 1000 CT - 3 5 pF RF - 10 - rr - - 100 AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time ps IF = 25 mA 2 Aug-23-2001 BAS40-07W Diode capacitance CT = (VR ) Differential forward resistance rf = (IF) f = 1MHz f = 10 kHz 5 CT BAS 40... EHB00040 10 3 rf pF BAS 40... EHB00041 4 10 2 3 2 10 1 1 0 10 0 20 V 10 3 0.1 30 1 10 F VR Reverse current IR = (VR) TA = Parameter 10 3 Forward current IF = (TS ) BAS 40... EHB00039 140 mA A 120 TA = 150 C 10 2 110 100 IF R mA 100 10 1 90 80 70 85 C 60 10 0 50 40 10 -1 30 20 25 C 10 10 -2 0 10 20 30 V 0 0 40 15 30 45 60 75 90 105 120 C 150 TS VR 3 Aug-23-2001 BAS40-07W Forward current IF = (VF) TA = 25 C 10 2 F BAS 40... EHB00038 mA 10 1 TA = -40 C 25 C 85 C 150 C 10 0 10 -1 10-2 0.0 0.5 1.0 V 1.5 VF 4 Aug-23-2001