Aug-23-2001
1
BAS40-07W
VPS05605
4
2
1
3
Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detection and mixing
32
EHA07008
14
Type Marking Pin Configuration Package
BAS40-07W 47s 1=C1 2=C2 3=A2 4=A1 - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR40 V
Forward current IF120 mA
Surge forward current, t
10 ms IFSM 200
Total power dissipation
TS
118°C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tstg -55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS
125 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
Aug-23-2001
2
BAS40-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10
AV(BR) 40 - - V
Reverse current
VR = 30 V
VR = 40 V
IR
-
-
-
-
1
10
µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 40 mA
VF
250
350
600
310
450
720
380
500
1000
mV
AC Characteristics
Diode capacitance-
VR = 0 V, f = 1 MHz CT- 3 5 pF
Differential forward resistance
IF = 10 mA, f = 10 kHz RF- 10 -
Charge carrier life time
IF = 25 mA
rr - - 100 ps
Aug-23-2001
3
BAS40-07W
Diode capacitance CT =
(VR)
f = 1MHz
0
0
EHB00040BAS 40...
C
V
R
T
1
2
3
4
pF
5
10 20 V 30
Differential forward resistance rf =
(IF)
f = 10 kHz
0.1
EHB00041BAS 40...
r
Ι
f
1 10 mA 100
F
Ω
2
10
1
10
10
3
10
3
Reverse current IR =
(VR)
TA = Parameter
0
EHB00039BAS 40...
Ι
V
R
R
10
0
-2
10
1
10
2
10
3
10
A
10
-1
10 20 30 V 40
T
A
= 150 C
85 C
25 C
µ
Forward current IF =
(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
110
120
mA
140
I
F
Aug-23-2001
4
BAS40-07W
Forward current IF =
(VF)
TA = 25 °C
0.0
EHB00038BAS 40...
Ι
V
F
F
0.5 1.0 V 1.5
T
A
= -40 ˚C
25 ˚C
85 ˚C
150 ˚C
-2
10
-1
10
mA
0
10
10
1
2
10
