VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES * Low profile, axial leaded outline * High frequency operation Cathode Anode * Very low forward voltage drop * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY * Designed and qualified for commercial level Package DO-204AL (DO-41) IF(AV) 1A VR 20 V VF at IF See Electrical table IRM max. 10 mA at 125 C TJ max. 150 C Diode variation Single die EAS See Electrical table * Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-1N5817... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 1.0 A 20 V IFSM tp = 5 s sine 240 A VF 1 Apk, TJ = 25 C 0.45 V TJ Range - 65 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL VR Maximum DC reverse voltage VS-1N5817 VS-1N5817-M3 UNITS 20 20 V VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current at TJ = 25 C IFSM Revision: 21-Sep-11 TEST CONDITIONS VALUES 50 % duty cycle at TL = 138 C, rectangular waveform 1.0 5 s sine or 3 s rect. pulse 240 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied UNITS A 40 Document Number: 93255 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum reverse leakage current IRM (1) Typical junction capacitance Typical series inductance Maximum voltage rate of change TEST CONDITIONS 1A TJ = 25 C 3A TJ = 25 C VR = Rated VR TJ = 100 C TYP. MAX. 0.42 0.45 0.50 0.75 0.012 1.0 2.0 10 - UNITS V mA CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 110 LS Measured lead to lead 5 mm from package body 8.0 - nH - 10 000 V/s dV/dt Rated VR pF Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ (1), TStg Maximum thermal resistance, junction to lead RthJL DC operation Lead length = 1/8" 32 Maximum thermal resistance, junction to ambient RthJA DC operation Without cooling fin 100 UNITS - 65 to 150 C C/W 0.33 Approximate weight Marking device VALUES g 0.012 Case style DO-204AL (DO-41) oz. 1N5817 Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 21-Sep-11 Document Number: 93255 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5817, VS-1N5817-M3 Vishay Semiconductors 100 Allowable Lead Temperature (C) IF - Instantaneous Forward Current (A) www.vishay.com 10 1 T = 150 C T = 125 C T = 25 C 0.1 145 0.2 0.4 0.6 0.8 Square wave (D = 0.5) 135 see note (1) 0 1 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0.4 0.8 1.2 1.6 IF(AV) - Average Forward Current (A) 93255_04 Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 100 0.5 Average Power Loss (W) TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C TJ = 75 C 0.1 TJ = 50 C 0.01 TJ = 25 C 0.001 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.4 0.3 RMS Limit 0.2 DC 0.1 0.0001 0 0 5 10 15 0 20 VR - Reverse Voltage (V) 93255_02 100 10 10 15 20 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 93255_03 IFSM - Non-Repetitive Surge Current (A) TJ = 25 C 5 0.8 1.2 1.6 Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current 1000 0 0.4 Average Forward Current - IF(AV) (A) 93255_05 Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) DC 140 130 0 93255_01 IR - Reverse Current (mA) 150 1000 At Any Rated Load Condition And With rated VRRM Applied Following Surge 100 TJ = 25 C 10 10 93255_06 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D) (2) Revision: 21-Sep-11 Document Number: 93255 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 1N5817 TR -M3 1 2 3 4 1 - Vishay Semiconductors product 2 - Part number: 1 A, 20 V 3 - TR = Tape and reel package None = Box package 4 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-1N5817 1000 1000 PACKAGING DESCRIPTION Bulk VS-1N8517TR 5000 5000 Tape and reel VS-1N5817-M3 1000 1000 Bulk VS-1N5817TR-M3 5000 5000 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93255 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000