Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Ease of Paralleling BVDSS 500V
▼ Fast Switching Characteristic RDS(ON) 0.85Ω
▼ Simple Drive Requirement ID8A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 1.0 ℃/W
Rthj-a Maixmum Thermal Resistance, Junction-ambient 40 ℃/W
Data & specifications subject to change without notice
8
32
125
8
5.1
320
-55 to 150
1
IRF840S
+20
Rating
500
RoHS-compliant Product
200904141
Parameter
Parameter
Storage Temperature Range -55 to 150
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G
D
S
A
PEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost. GDSTO-263(S)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 500 - - V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.8A - - 0.85 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4.8A - 4.2 - S
IDSS Drain-Source Leakage Current VDS=500V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=400V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=8A - 45 72 nC
Qgs Gate-Source Charge VDS=400V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 25 - nC
td(on) Turn-on Delay Time3VDD=250V - 12 - ns
trRise Time ID=8A - 31 - ns
td(off) Turn-off Delay Time RG=9.1Ω,VGS=10V - 48 - ns
tfFall Time RD=31Ω-33-ns
Ciss Input Capacitance VGS=0V - 1250 2000 pF
Coss Output Capacitance VDS=25V - 270 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3Tj=25℃, IS=8A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=8A, VGS=0V, - 515 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
IRF840S
IRF840S
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
4
8
12
16
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=4.8A
VG=10V
0
2
4
6
8
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
IRF840S
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0
2
4
6
8
10
12
0 102030405060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=8A
VDS =100V
V DS =250V
V DS =400V
0
400
800
1200
1600
2000
2400
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
