2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation dV DS /dt dV/dt PD Operating and Storage Temperature range Tch Tstg EAR Equivalent circuit schematic Ratings 500 500 11 44 30 11 453.9 16.5 Unit V V A A V A mJ mJ VGS=-30V Gate(G) Note *1 Note *2 Note *1:Tch < = 150C,Repetitive and Non-repetitive Note *2:StartingTch=25C,IAS=4.4A,L=43mH, VCC=50V,RG=50 EAS limited by maximum channel temperature 20 5 165 2.02 +150 -55 to +150 Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *3 kV/s VDS< = 500V kV/s Note *4 Tc=25C W Ta=25C C C Electrical characteristics (Tc =25C unless otherwise specified) Turn-Off Time toff Drain(D) Remarks and Avalanche current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Thermal impedance' graph. < BVDSS,Tch= < 150C < -ID, -di/dt=50A/s,VCC= Note *4:IF = Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS =500V VGS=0V Tch=125C VDS =400V VGS=0V VGS=30V VDS=0V ID=5.5A VGS=10V ID=5.5A VDS=25V VDS =25V VGS=0V f=1MH VCC=300V ID=5.5A VGS=10V Min. Typ. 500 3.0 4.5 RGS=10 V CC=250V ID=11A VGS=10V IF=11A VGS=0V Tch=25C IF=11A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 250 100 0.70 10 0.57 9.0 950 1425 130 195 6.0 9.0 16 24 6.0 9.0 33 50 5.5 8.3 25 38 10 15 8.0 12 1.10 1.50 650 5.5 Units V V A A nA S pF ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.758 62 Units C/W C/W 1 2SK3931-01 FUJI POWER MOSFET Characteristics 200 Allowable Power Dissipation PD=f(Tc) 30 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 180 20V 25 160 140 20 ID [A] 120 PD [W] 10V 8.0V 100 7.0V 15 80 6.5V 10 60 40 VGS=6.0V 5 20 0 0 0 25 50 75 100 125 0 150 5 10 15 Tc [C] 100 20 25 30 35 40 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] 2.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6.0V 6.5V 1.8 2.0 7.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V 1.8 1.6 1.6 1.4 1.4 8.0V 10V 1.2 RDS(on) [ ] RDS(on) [ ] 100 ID [A] 20V 1.0 0.8 1.2 1.0 max. 0.8 0.6 0.6 0.4 0.4 0.2 0.2 typ. 0.0 0.0 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3931-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25C 6.5 6.0 12 Vcc= 100V 5.5 max. 250V 10 400V 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 0 150 10 20 Tch [C] 4 10 30 40 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 3 10 IF [A] C [pF] 10 Coss 2 10 1 1 10 Crss 0 0.1 0.00 10 -1 10 0 1 10 2 10 10 10 3 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 500 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V IAS=4.4A 450 400 10 350 2 EAV [mJ] t [ns] td(off) td(on) 10 IAS=6.6A 300 tf 250 200 IAS=11A 1 150 tr 100 50 10 0 10 0 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3931-01 10 2 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=50V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ http://store.iiic.cc/ 4