BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications * Suitable for automatic insertion in thick and thin-film circuits * Low Noise: BC859, BC860 * Complement to BC846 ... BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BC856 : BC857/860 : BC858/859 -80 -50 -30 V V V : BC856 : BC857/860 : BC858/859 -65 -45 -30 V V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -30V, IE=0 Min. 110 Typ. Max. -15 -300 -650 hFE DC Current Gain VCE= -5V, IC= -2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz NF Noise Figure (c)2001 Fairchild Semiconductor Corporation : BC856/857/858 : BC859/860 : BC859 : BC860 VCE= -5V, IC= -200A f=1KHz, RG=2K VCE= -5V, IC= -200A RG=2K, f=30~15000Hz -600 Units nA 800 -660 mV mV -750 -800 150 2 1 1.2 1.2 mV mV mV mV MHz 6 pF 10 4 4 2 dB dB dB dB Rev. A1, June 2001 Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 Marking Code Type 856A 856B 856C 857A 857B 857C 858A 858B 858C Mark 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC Type 859A 859B 859C 860A 860B 860C Mark 9DA 9DB 9DC 9EA 9EB 9EC (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BC856/857/858/859/860 hFE Classification BC856/857/858/859/860 Typical Characteristics -50 1000 IB = - 400 A IB = - 350A -40 VCE = - 5V IB = - 300A -35 IB = - 250A -30 IB = - 200A -25 IB = - 150A -20 IB = - 100A -15 -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 IB = - 50A -5 10 -0.1 -0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Figure 1. Static Characteristic -100 Figure 2. DC current Gain -10 -100 -1 IC[mA], COLLECTOR CURRENT IC = 10 IB V BE(sat) -0.1 VCE(sat) -0.01 -0.1 VCE = - 5V -10 -1 -0.1 -1 -10 -100 -0.2 -0.4 IC[mA], COLLECTOR CURRENT 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2001 Fairchild Semiconductor Corporation -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE=0 10 -0.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1 1000 f=1MHz IE=0 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A1, June 2001 BC856/857/858/859/860 Package Demensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3