©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BC856/857/858/859/860
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
VCEO Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -100 mA
PCCollector Power Dissipation 310 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA
hFE DC Current Gain VCE= -5V, IC= -2mA 110 800
VCE (sat) Collector-Emitter Satu ration Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -90
-250 -300
-650 mV
mV
VBE (sat) Base-Emitter Satu ration Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -700
-900 mV
mV
VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA -600 -660 -750
-800 mV
mV
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA
f=100MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC856/857/858
: BC859/860
: BC859
: BC860
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000Hz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
1. Base 2. Emitter 3. Collector
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
SOT-23
1
2
3
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BC856/857/858/859/860
hFE Classification
Marking Code
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
Type 856A 856B 856C 857A 857B 857C 858A 858B 858C
Mark 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC
Type 859A 859B 859C 860A 860B 860C
Mark 9DA 9DB 9DC 9EA 9EB 9EC
©2001 Fairchild Semiconductor Corporation
BC856/857/858/859/860
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = - 50µA
IB = - 100µA
IB = - 150µA
IB = - 200µA
IB = - 250µA
IB = - 300µA
IB = - 350µA
IB = - 400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
10
100
1000
VCE = - 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = - 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
f=1MHz IE=0
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BC856/857/858/859/860
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
