Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation VBE = 0 V PINNING - TO220AB PIN DESCRIPTION 1 emitter 2 collector 3 base tab TYP. - Tmb 25 C PIN CONFIGURATION MAX. UNIT 1100 700 0.5 1 46 V V A A W SYMBOL c tab b collector e 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb 25 C MIN. -40 - MAX. UNIT 1100 700 0.5 1 0.2 0.3 0.3 46 150 150 V V A A A A A W C C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient CONDITIONS in free air TYP. MAX. UNIT - 2.7 K/W 60 - K/W 1 Turn-off current. November 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 ELECTRICAL CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Emitter cut-off current DC current gain DC current gain Output capacitance VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 5 V; IC = 0 A IC = 50 mA; VCE = 5 V IC = 20 mA; VCE = 5 V VCB = 100 V; f = 1MHz ICES ICES IEBO hFE hFE Cob November 1999 2 MIN. TYP. MAX. UNIT - - 100 1.0 A mA 26 26 - 50 50 4.7 1 125 150 - mA pF Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 2.5 Collector current (mA) 120 2.5E-03 60uA 100 90 2 2.0E-03 50uA 80 1.5 1.5E-03 70 40uA 60 50 1 1.0E-03 30uA 0.5 5.0E-04 0 Normalised Power Derating PD% 110 40 20uA 30 10uA 20 10 0 0.0E+00 0 2 4 Vce (V) 6 8 0 10 40 60 80 100 Tmb / C 120 140 Fig.4. Normalised power dissipation. PD% = 100PD/PD 25 C = f (Tmb) Fig.1. Typical transfer characteristics. IC = f(VCE) ; parameter IB . 0.06 20 Collector current (A) Zth / (K/W) bux86p 10 1.2mA 0.05 0.98mA 0.04 0.78mA 0.5 1 0.2 0.03 0.1 0.58mA 0.02 0.38mA 0.01 0.18mA 0.1 4 Vce (V) 6 8 T 1.0E-06 0.0001 10 t 0.01 1 t/s Fig.2. Typical transfer characteristics. IC = f(VCE) ; parameter IB . 1000 tp T 0.02 0.01 2 D= D= 0 0 0 tp PD 0.05 Fig.5. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBESAT (V) D.C Current Gain hFE 0.78 Vce = 5V 0.76 Tj = 125 C Ic=100mA 0.74 100 Tj = 25 C 0.72 0.7 Ic = 20 mA Tj = -40 C Ic= 50mA 0.68 10 0.66 0.64 0.62 1 0.1 1 10 Collector current (mA) 0.6 100 0 Fig.3. Typical DC current gain. hFE = f(IC); parameter VCE. November 1999 5 IB (mA) 10 15 20 Fig.6. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 BUX87-1100 Vce(sat) (V) 100 Output Capacitance Cob (pF) 1 Ic = 100mA 10 0.1 Ic = 50mA Ic=20mA 0.01 1 0.1 1 IB (mA) 10 100 1 Fig.7. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC November 1999 10 Vcb (V) 100 Fig.8. Typical output capacitance COB. COB = f(VCB); 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.9. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 6 Rev 1.000