Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1100 V
VCEO Collector-emitter voltage (open base) - 700 V
ICCollector current (DC) - 0.5 A
ICM Collector current peak value - 1 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 46 W
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 emitter
2 collector
3 base
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1100 V
VCEO Collector-emitter voltage (open base) - 700 V
ICCollector current (DC) - 0.5 A
ICM Collector current (peak value) tp = 2 ms - 1 A
IBBase current (DC) - 0.2 A
IBM Base current (peak value) - 0.3 A
-IBM Reverse base current (peak value)1- 0.3 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 46 W
Tstg Storage temperature -40 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - 2.7 K/W
Rth j-a Junction to ambient in free air 60 - K/W
123
tab
b
c
e
1 Turn-off current.
November 1999 1 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
ELECTRICAL CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES VBE = 0 V; VCE = VCESMmax - - 100 µA
ICES VBE = 0 V; VCE = VCESMmax; - - 1.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 5 V; IC = 0 A - - 1 mA
hFE DC current gain IC = 50 mA; VCE = 5 V 26 50 125
hFE DC current gain IC = 20 mA; VCE = 5 V 26 50 150
Cob Output capacitance VCB = 100 V; f = 1MHz - 4.7 - pF
November 1999 2 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
Fig.1. Typical transfer characteristics.
I
C
= f(V
CE
) ; parameter I
B
.
Fig.2. Typical transfer characteristics.
I
C
= f(V
CE
) ; parameter I
B
.
Fig.3. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
.
Fig.4. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25 ˚C
= f (T
mb
)
Fig.5. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.6. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
Collector current (mA)
0.0E+00
5.0E-04
1.0E-03
1.5E-03
2.0E-03
2.5E-03
0246810
Vce (V)
60uA
50uA
40uA
30uA
20uA
10uA
0
0.5
1
1.5
2
2.5
0 20 40 60 80 100 120 140
Tmb / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Collector current (A)
0
0.01
0.02
0.03
0.04
0.05
0.06
0246810
Vce (V)
1.2mA 0.98mA
0.78mA
0.58mA
0.38mA
0.18mA
1.0E-06 0.0001 0.01 1
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
Zth / (K/W) bux86p
t / s
D=
D =
tp
T
T
P
t
D
t
p
D.C Current Gain hFE
1
10
100
1000
0.1 1 10 100
Collector current (mA)
Tj = 25 C
Tj = -40 C
Tj = 125 C
Vce = 5V
VBESAT (V)
0.6
0.62
0.64
0.66
0.68
0.7
0.72
0.74
0.76
0.78
0 5 10 15 20IB (mA)
Ic = 20 mA
Ic= 50mA
Ic=100mA
November 1999 3 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
Fig.7. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
Fig.8. Typical output capacitance C
OB
.
C
OB
= f(V
CB
);
Vce(sat) (V)
0.01
0.1
1
10
0.1 1 10 100
IB (mA)
Ic=20mA Ic = 50mA
Ic = 100mA
Output Capacitance Cob (pF)
1
10
100
1 10 100
Vcb (V)
November 1999 4 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.9. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
November 1999 5 Rev 1.000
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUX87-1100
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1999 6 Rev 1.000
