M66515FP#TC2J - Renesas Electronics

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company nam e remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

Notice

1. All information included in this document is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights

of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.

No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights

of Renesas Electronics or others.

3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.

4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of

semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,

and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by

you or third parties arising from the use of these circuits, software, or information.

5. When exporting the products or technology described in this document, you should comply with the applicable export control

laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas

Electronics products or the technology described in this document for any purpose relating to military applications or use by

the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and

technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited

under any applicable domestic or foreign laws or regulations.

6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics

does not warrant t hat such information is error free. Renesas Electronics assumes no liability whatsoever for any damages

incurred by you resulting from errors in or omissions from the information included herein.

7. Renesas Electronics products are classified accord ing to the following three quality grades: “Standard”, “High Quality”, and

“Specific”. The recommend ed applications for each Renesas Electron i cs product depends on the product’s quality grade, as

indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular

application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior

written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for

which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way

liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an

application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written

consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise

expressl y specified in a Renesas Electronics data sheets or data boo ks, etc.

“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual

equipment; home electron ic appliances; machine tools; personal electro nic equipment ; and industrial robots.

“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-

crime systems; safety equipment; and medical equipment not specifically designed for life support.

“Specific”: Aircraft; aerospace equipment; submersible repeat ers; nuclear reactor contro l systems; medical equipment or

systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare

interven tion (e.g. excision, etc.), an d any other applications or purpo s es t hat pose a di rect th reat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,

especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation

characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or

damages arising out of the use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have

specific chara cteristi cs such as the o ccurren ce of failure at a certai n rat e and malfun cti on s under certain u se cond itions. Further,

Renesas Electronics prod ucts are not subject to radiation resistance design. Please be sure to implement safet y measures to

guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a

Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire

control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because

the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system

manufactured by you.

10. Please contact a Renesas Electronics sales of fice for details as t o environmental matters such as the environ mental

compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable

laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS

Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with

applicable laws and regulations.

11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas

Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this

document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) “Renesas Electronics” as used i n this document mean s Renesas Electronics Corporation and also in cludes its majority-

owned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

Rev.1.00, Sep.22.2003, page 1 of 11

M66515FP

Laser Diode Driver/Controller REJ03F0084-0100Z

Rev.1.0

Sep.22.2003

Description

The M66515 is a laser diode driver/contro ller that performs drive and controls the laser power control of a type of

semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem

in which the semiconductor laser diode anode and monitoring photo diode cathode are connected to the stem.

This IC has a sink-type laser driving current output pin, and can drive a laser diode with a bias current of up to a

maximum 30 mA and with switched currents of up to 120 mA, switched at rates of up to 40 Mbps.

The IC incorporates a sample hold circuit, so that a self-APC (Automatic Power Control) system, which does not

require external laser power control, can be realized.

Features

• Internal sample-and-hold circuit for self-APC configuration

• High-speed switching (40 Mbps)

• High driving currents (150 mA max)

• Settable bias current (30 mA max)

• Single 5 V power su ppl y

Applications

• Equipment employing semiconductor laser diodes

Function Overview

The M66515 is a laser diode driver/controller which dr ives and controls the laser power of a semiconductor laser diode

(LD) the anode of which is connected, with the cathode of a photodiode (PD) for monitoring, to a stem (among

Mitsubishi lasers, N type models).

LD driving and laser power control are executed by connecting an external capacitance to the CH pin and applying a

reference voltage to the Vr pin.

The PD current occurring when a LD emits light flows through a resistance connected across 1RM and 2RM, resulting

in a potential difference (V M). This VM is compared with the voltag e applied to the Vr pin, and when VM<Vr, a constant

current source from the CH pin flows to charge the external capacitor. When VM>Vr, a constant current sink from the

CH pin causes the charge on the external capacitor to be discharged.

This operation is performed when the S/H input is "L" (sample); when the S /H input is in the "H" state, the CH pin is in

the high-impedance state (hold), regardless of VM, Vr and the DATA input state.

The LD driving current consists of a switched current ISW, which is controlled by the DATA input, an d IB, a LD bias

current which is independent of the DATA input state.

M66515FP

Rev.1.00, Sep.22.2003, page 2 of 11

Pin Configuration (top view)

Description of Pin

Pin name Name Function

LD Laser current output Connected to the semiconductor LD cathode

PD Monitor diode input Connected to the monitor PD anode

RSSwitching current setting load

output Connects the load resistance to set the current for switching (ISW) to GND

RBBias current setting load

output Connects the load resistance to set the bias current (IB) to GND. If IB is not

used, this pin should be left open.

VBBias current setting voltage

input The bias current value (IB) can be set by applying a voltage to this pin. If IB

is not used, this pin should be left open.

DATA Switching data input At "L", the current ISW+IB flows to the LD; at "H", the current to the LD is IB

1RM, 2RM Load input for monitoring Connect a load resistance to convert the monitor PD current to a voltage

across 1RM and 2RM

ENB Laser current enable input When "H", all current source circuits are turned off

RO Laser current load output Connect a laser current load resistance between this pin and VCC

S/H Sample hold control input When "L", sample (APC) operation is performed; when "H", hold

(switching) is performed

CH Hold capacitor load

input/output Connect a hold capacitor between this pin and GND. This pin is connected

within the M66515 to the sample hold circuit output and ISW current source

input.

Vref Reference voltage output Output pin for the M66515 internal reference vo ltage (1.2 V typ)

Vr Reference voltage input A reference voltage is applied to cause operation of the comparator within

the sample hold circuit. When using th e reference voltage within the

M66515, this pin should be connected to the Vref pin.

TEST Test pin Pin used for testing at time of shipment of the M66515; should be left open

VCC1 Power supply pin 1 Power supply for the internal analo g system; connect to a positive power

supply (+5 V)

VCC2 Power supply pin 2 Power supply for the internal digital system; connect to a positive power

supply (+5 V)

GND1 GND pin 1 GND for internal analog system

GND2 GND pin 2 GND for internal digital system

M66515FP

Rev.1.00, Sep.22.2003, page 3 of 11

Block Diagram

Explanation of operation

1. Laser driving current values

The values of the laser driving currents ISW and IB can be approximated as follows, if VC is the voltage of the hold

capacitor connected to the CH pin.

(1) ISW (switched current)

Here 0≤VC≤VCC-1.8 V, ISW (max) =120 mA, and RS is the value of the resistance connected between the RS pin and

GND

(2) IB (bias current)

Here 0≤VB≤VCC-2.7 V, IB (max) =30 mA, and RB is the value of the resistance connected between the RB pin and GND

2. Switching oper ati o n

When DATA="L", the LD driving current is ISW+IB; when DATA="H", the LD driving current is IB.

3. ENB input

Whereas the laser driving current is controlled by DATA input by controlling the driving current applied to the laser

with the current sour ce in the M66515 turned on, control by ENB turns the current source operation on and off.

When ENB="L" the current source is turned on, and when ENB="H" the current source is turned off.

When ENB="H", the CH pin is forced to "L" level, an d the charge on the capacitor connected to the CH pin is forcibly

discharged.

4. Internal reset operati on

The M66515 incorporates a reset circuit to prevent the flow of excessive current to the laser when power is turned on;

when VCC<3.5 V (typ), the internal current source is turned off and the CH pin is forced to "L" level.

M66515FP

Rev.1.00, Sep.22.2003, page 4 of 11

5. RO pin

The RO pin is connected to the laser driving current load resistance; current essentially equal to ISW flows from this pin.

The load resistance is connected between this pin and VCC; by this means the Power dissipation within the IC is

reduced.

However, the circuit operation requires that the voltage at this pin be 2.5 V or above. Hence if the maximum value of

ISW is ISW(max), then the maximum value RO(max) of the load resistance RO is as follows.

For example, if VCC(min)=4.75 V and ISW(max)=120 mA, then RO(max)=18.8 Ω. In other words, when setting the

resistance RS such that the ma ximum value of ISW is 120 mA, RO should be 18.8 Ω or lower.

6. Sample-and-hold circuit

(1) Summary of circuit operation

The following is a summary of operation of the sample hold circuit within the M66515.

A PD current arising upon LD light emission flows through the resistance connected between 1RM and 2RM, giving

rise to a potential difference (VM). This VM is compared with the voltage applied to the pin Vr, and if VM<Vr, pin CH is

a constant current source which charges the external capacitor. If VM>Vr, pin CH is a constant current sink which

discharges the external capacitor. This operation is performed when the S /H input is "L" (sample); when the S/H input

is "H", the CH pin is kept in the high-impedance state (hold), regardless of VM, Vr, and the DATA input state.

Function table

Input Switched state

ENB S/H Vm, Vr SW1 SW2 Tr1 Output

H X X OFF OFF ON Fixed at "L"

L H X OFF OFF OFF High-impedance state (hold)

LLV

M < Vr ON OFF OFF Constant current source (sample)

VM > Vr OFF ON OFF Consta nt current sink (sample)

X: arbitrary

(2) APC operation timing chart

An example of an APC operation timing chart for a given sample hold control signal is shown below.

In this example, a case is shown in which it is assu med that the direction of the leakage current of the CH pin in the hold

state is the direction flowing out from the M66515 (the negative direction).

M66515FP

Rev.1.00, Sep.22.2003, page 5 of 11

7. VCC and GND pins

The VCC1 and VCC2 pins and the GND1 and GND2 pins are related to the power supply. The internal circuitry

connected to these pins is as follows.

VCC1, GND1: Connected to analog circuitry

VCC2, GND2: Connected to digital circuitry

The following should be taken into account in designing the actual wiring.

(1) Wiring widths should be as broad as possible, and drawn-out lengths of wiring should be avoided.

(2) The electrolytic capacitor for voltage stability should be positioned close to VCC1 and GND1.

(3) The bypass capacitor should be positioned close to VCC2 and GND2.

Important Information Regarding Peripheral Element Wiring

Peripheral elements necessary for M66515 operation should be positioned as close to the M66515 as possible.

Method of Calculating Power dissipation

The M66515 Power dissipation P is essentially given by the following formula.

P = ICC × VCC + I(RO) × I(RO) + I(LD) × V(LD)

Here V(RO) is the RO pin voltage, V(LD) is the LD pin voltage, I(RO) is the RO pin load current, and I(LD) is the LD pin

load current.

For example, when VCC = 5.25 V, V(RO) = V(LD) = 2.5 V, and I(RO) = I(LD) = 150 mA, the Power dissipation when the laser

is turned on and off is as follo ws.

(1) When the laser is on (DATA = “L”, ICC = 75 mA):

PON = 75 × 5.25 + 0 + 150 × 2.5 = 768.8 (mW)

(2) When the laser is off (DATA = “H”, ICC = 74 mA):

POFF = 74 × 5.25 + 0 + 150 × 2.5 = 763.5 (mW)

M66515FP

Rev.1.00, Sep.22.2003, page 6 of 11

Absolute Maximum Ratings

(Unless otherwise noted, Ta = –20 to 70°C)

Symbol Parameter Conditions Value Unit

VCC Power supply voltage −0.5 to +7.0 V

VIInput voltage CH, Vr −0.3 to VCC V

DATA, ENB, S/H −0.3 to +7.0 V

VOOutput voltage RO −0.5 to +7.0 V

ISW Switching current 150 mA

IBBias current 45 mA

Pd Power dissipation Mounted on board, with

Ta=25°C (see note) 1200 mW

Tstg Storage temperatur e −60 to +150 °C

Note: When Ta ≥ 25°C, derating at 9.6 mW/°C should be performed.

Recommended Operating Conditions

(Unless otherwise noted, Ta = –20 to 70°C)

LimitsSymbol Parameter Min Typ Max Unit

VCC Power supply voltage 4.75 5.0 5.25 V

ISW Switching current 120 mA

IBBias current 30 mA

Topr Operating ambient temperature −20 70 °C

M66515FP

Rev.1.00, Sep.22.2003, page 7 of 11

Electrical Characteristics

(Unless otherwi se noted, VCC = 5 V ±5%, Ta = –20 to 70°C)

LimitsSym-

bol Parameter Measurement conditions

Min Typ Max

Unit Mea-

sure-

ment

cir-

cuit

VIH "H" input

voltage

DATA, ENB, S/H 2.0 V

VIL "L" input voltage DATA, ENB, S/H 0.8 V

Vr Reference

voltage input Vr 0.4 2.0 V

Vref IO = –10 µA1.2V

Ta = –20 to 25°C –0.9

Vref Reference

voltage output Temperature

coefficient Ta = 25 to 70°C –0.9 mV/°C1

VLD Operating

voltage range LD 2.5 VCC V

VIEffective

voltage upper

limit

CHVCC–

1.8 VCC–

1.4 V

VOH "H" output

voltage CHENB = 0.8 V, IOH = –2 mA 4.0 V 1

VOL "L" output

voltage CHENB = 0.8 V, IOL = 2 mA 0.6 V 1

VI = 2.7 V 20 µADATA, ENB

VI = 0.4 V –0.2 mA

ILInput current

CHVI = 0 to VCC ±1µA

CH = 3.0 V, Rs = 360 Ω, VLD = 2 V 120 mAISW Switching

current (see

note)

LD Temperature

coefficient Ta = 20 to 70°C0.11mA/°C2

IBBias current

(see note) LD VB = 1.2 V, RB = 360 Ω, VLD = 2 V 30 mA 2

Icg Load charging

current CHENB = 0.8 V, VO = 0.6 to 4.0 V –0.66 –2.0 mA 3

Idg Load discharge

current CHENB = 0.8 V, VO = 0.6 to 4.0 V 0.66 2.0 mA 3

Ioz Output current

in off state CHVO = 0 to VCC, Hold state ±5µA3

ENB = 0.8 V, DATA = 2.0 V 0.33 50IOFF Output current

when off LD

ENB = 2.0 V, DATA = 0.8 V 0.01 50 µA2

DATA =

0 V 54 75ICC Power supply current VCC = 5.25 V, ENB = 0 V,

CH = 3.0 V, VB = 1.2 V,

RS = 300 Ω, RB = 360 Ω,

RO = LD = 5.0 V DATA =

4.5 V 52 74

mA 4

*Typical values are for Ta = 25°C, VCC = 5 V.

Note: These quantities indicate the input voltage-ou tput current conversion characteristic; ISW and IB should be used

within the range of the rated values under recommended operating conditions.

M66515FP

Rev.1.00, Sep.22.2003, page 8 of 11

Switching Characteristics

(Ta = 25°C, VCC = 5 V)

Measurement pin LimitsSymbol Item Input Output Measurement

conditions Min. Typ. Max. Unit

fOP Operating

frequency 40 Mbps

ILD(L) = 0 mA

ILD(H) = 60 mA (Note 1) 7µs

tRP1 Circuit response

time 1 CH voltage LD current

ILD(L) = 55 mA

ILD(H) = 65 mA (Note 1) 2µs

IPD(L) = 0 mA

IPD(H) = 2 mA

RM = 1 kΩ (Note 2)

15 µs

tRP2 Circuit response

time 2 PD current CH voltage

|∆IPD| = 0.2 mA

RM = 1 kΩ (Note 2) 8µs

tRP3 Circuit response

time 3

S/H voltage CH voltage IPD = 0 mA, 2 mA

RM = 1 kΩ, Vr = 1.2 V

(Note 3)

1µs

tON Circuit turn-on

time

ENB voltage LD current ILD(H) = 60 mA (Note 4) 5 µs

tOFF Circuit turn-off

time

ENB voltage LD current ILD(H) = 60 mA (Note 4) 2 µs

Note 1. Measurement circuit and Timing chart

M66515FP

Rev.1.00, Sep.22.2003, page 9 of 11

Note 2. Measurement circuit and Timing chart

Note 3. Measurement circuit and Timing chart

M66515FP

Rev.1.00, Sep.22.2003, page 10 of 11

Note 4. Measurement circuit and Timing chart

Application example

M66515FP

Rev.1.00, Sep.22.2003, page 11 of 11

Package Dimensions

SOP20-P-300-1.27

Weight(g)

—

JEDEC Code

0.26

EIAJ Package Code Lead Material

Cu Alloy

20P2N-A Plastic 20pin 300mil SOP

Symbol Min Nom Max

Dimension in Millimeters

—

.350

.180

.512

.25

—

.57

.40

—

.271

.10

—

.81

.40

.20

.612

.35

.271

.87

.60

.251

—

.627

—

.20

.12

—

.50

.250

.712

.45

—

.18

.80

—

.10

—

0.76

—

0°8°

20 11

Recommended Mount Pad

Detail F

Detail G

—

—Z

—

0.585

—

0.735

0.25

MMP

2003. Renesas Technolo

Corp., All ri

hts reserved. Printed in Japan

Colo

hon 1.0

Keep safet

first in

our circuit desi

1. Renesas Technolo

Corp. puts the maximum effort into makin

semiconductor products better and more reliable, but there is alwa

s the possibilit

that trouble

occur with them. Trouble with semiconductors ma

lead to personal in

, fire or propert

dama

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a

product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater

use.

6. The prior written approval of Renesas Technolo

Corp. is necessar

to reprint or reproduce in whole or in part these materials

. If these products or technolo

ies are sub

ect to the Japanese export control restrictions, the

must be exported under a license from the Japanese

overnment and

cannot

e imported into a countr

other than the approved destination.

diversion or reexport contrar

to the export control laws and re

ulatio

s of Japan and/or the countr

of destination is prohibited

8. Please contact Renesas Technolo

Corp. for further details on these materials or the products contained therein

ales Strate

ic Plannin

Div. Nippon Bld

., 2-6-2, Ohte-machi, Chi

oda-ku, Tok

o 100-0004, Japa

htt

://www.renesas.co

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501

Renesas Technology Europe Limited.

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom

Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900

Renesas Technology Europe GmbH

Dornacher Str. 3, D-85622 Feldkirchen, Germany

Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.

7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.

FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

RENESAS SALES OFFICES