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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FGD3245G2_F085 / FGB3245G2_F085 EcoSPARK(R)2 320mJ, 450V, N-Channel Ignition IGBT Features General Description SCIS Energy = 320mJ at TJ = 25oC The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK-2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450V which enables systems requiring a higher spark voltage Logic Level Gate Drive Low Saturation Voltage Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package Symbol JEDEC TO-263AB D-Pak COLLECTOR G COLLECTOR (FLANGE) E R1 GATE R2 JEDEC TO-252AA D-Pak G EMITTER COLLECTOR (FLANGE) E @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 1 www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 May 2014 Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) Rating 450 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 320 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25C 23 A IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110C 23 A VGEM Gate to Emitter Voltage Continuous 10 V Power Dissipation Total, at TC = 25C 150 W 1.1 W/oC PD Power Dissipation Derating, for TC > 25oC TJ Operating Junction Temperature Range -40 to +175 o C TSTG Storage Junction Temperature Range -40 to +175 o C TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 o C TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 o C ESD Electrostatic Discharge Voltage at100pF, 1500 4 kV CDM-Electrostatic Discharge Voltage at 1 2 kV Package Marking and Ordering Information Device Marking FGD3245G2 Device FGD3245G2_F085 Package TO252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units FGB3245G2 FGB3245G2_F085 TO263AB 330mm 24mm 800 units Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1K, TJ = -40 to 150oC 420 - 480 V BVCES ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC 440 - 500 V BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V, TJ = 25C 28 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2mA 12 14 - V Collector to Emitter Leakage Current VCE = 250V, RGE = 1K - - 25 A - - 1 mA IECS Emitter to Collector Leakage Current VEC = 24V, - - 1 - - 40 R1 Series Gate Resistance - 120 - R2 Gate to Emitter Resistance 10K - 30K ICER TJ = 25oC TJ = 150oC TJ = 25oC TJ = 150oC mA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 2 TJ = 25oC TJ = 150oC TJ = 150oC - 1.13 1.25 V - 1.32 1.50 V - 1.64 1.85 V www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 Device Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ - 23 Max Units Dynamic Characteristics QG(ON) Gate Charge ICE = 10A, VCE = 12V, VGE = 5V - nC 1.3 1.6 2.2 0.75 1.1 1.8 VCE = 12V, ICE = 10A - 2.7 - V Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 VGE = 5V, RG = 1K Current Rise Time-Resistive TJ = 25oC, - 0.9 4 s - 2.6 7 s - 5.4 15 s - 2.7 15 s - - 320 mJ - - 0.9 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE, VGEP Gate to Emitter Plateau Voltage TJ = 25oC TJ = 150oC V Switching Characteristics td(ON)R trR td(OFF)L tfL ESCIS Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH, VGE = 5V, RG = 1K Current Fall Time-Inductive ICE = 6.5A, TJ = 25oC, L = 3.0 mHy,RG = 1K, Self Clamped Inductive Switching VGE = 5V, (Note 1) TJ = 25C Thermal Characteristics RJC Thermal Resistance Junction to Case All packages o C/W Notes: 1: Self Clamping Inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that starting Tj=25oC; L=3mHy, ISCIS=14.6A,VCC=100V during inductor charging and VCC=0V during the time in clamp. 2: Self Clamping Inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that starting Tj=150oC; L=3mHy, ISCIS=10.9A,VCC=100V during inductor charging and VCC=0V during the time in clamp. @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 3 www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 Electrical Characteristics TA = 25C unless otherwise noted ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 100 RG = 1K, VGE = 5V, VCE = 100V o TJ = 25 C o TJ = 150 C 10 1 SCIS Curves valid for Vclamp Voltages of <430V 1 10 100 tCLP, TIME IN CLAMP (S) 1000 1.20 o TJ = 25 C 10 o T J = 150 C 0 1.45 SCIS Curves valid for Vclamp Voltages of <430V 0 3 VGE = 8V VGE = 5V -25 VGE = 4.5V VGE = 8V 1.15 -50 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) -25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERTURE ( C) Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 o TJ = -40 C 0 1 2 3 4 V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 VGE = 5V 1.20 I CE, COLLECTOR TO EMITTER CURRENT (A) I CE, COLLECTOR TO EMITTER CURRENT (A) VGE = 4.5V 1.25 Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature 0 VGE = 4.0V 1.30 1.10 1.00 -50 15 VGE = 3.7V 1.35 1.05 6 9 12 L, INDUCTANCE (mHy) ICE = 10A 1.40 VGE = 4.0V 1.15 20 Figure 2. Self Clamped Inductive Switching Current vs. Inductance ICE = 6A VGE = 3.7V RG = 1K , VGE = 5V, VCE = 100V 30 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp 40 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 o 0 TJ = 25 C 0 1 2 3 4 V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. Collector to Emitter On-State Voltage vs. Collector Current 4 www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 Typical Performance Curves I CE, COLLECTOR TO EMITTER CURRENT (A) I CE, COLLECTOR TO EMITTER CURRENT (A) (Continued) 40 VGE = 8.0V VGE = 5.0V VGE = 4.5V 30 VGE = 4.0V VGE = 3.7V 20 10 o 0 T J = 175 C 0 1 2 3 4 V CE, COLLECTOR TO EMITTER VOLTAGE (V) 30 VGE = 5.0V 20 10 0 25 50 75 100 125 150 o TC, CASE TEMPERATURE( C) 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VCE = 5V 20 TJ = 175oC 10 TJ = 25oC TJ = -40oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGE, GATE TO EMITTER VOLTAGE (V) 4.5 Figure 8. Transfer Characteristics VTH , THRESHOLD VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) Figure 7. Collector to Emitter On-State Voltage vs. Collector Current 40 1.8 1.6 1.4 1.2 1.0 0.8 -50 175 Figure 9. DC Collector Current vs. Case Temperature VCE = VGE ICE = 1mA -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE(oC) Figure 10. Threshold Voltage vs. Junction Temperature 10000 12 1000 SWITCHING TIME (S) LEAKAGE CURRENT (A) I CE = 6.5A, VGE = 5V, RG = 1K VECS = 24V 100 10 VCES = 300V 1 10 8 6 4 2 VCES = 250V 0.1 -50 -25 0 25 0 25 50 75 100 125 150 175 o TJ, JUNCTION TEMPERATURE ( C) Figure 11. Leakage Current vs. Junction Temperature @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 Inductive tOFF Resistive tON 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) 175 Figure 12. Switching Time vs. Junction Temperature 5 www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 Typical Performance Curves V GS, GATE TO EMITTER VOLTAGE(V) (Continued) 2000 CAPACITANCE (pF) f = 1MHz 1600 CIES 1200 800 CRES 400 COES 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V ) 25 10 o I CE = 10A, I G=1mA, T J = 25 C 8 V CE = 6V 6 VCE = 12V 4 2 0 0 10 Figure 13. Capacitance vs. Collector to Emitter Voltage BVCER, BREAKDOWN VOLTAGE (V) FGD3245G2_F085 / FGB3245G2_F085 Typical Performance Curves 20 30 40 Qg , GATE CHARGE(nC) 50 60 Figure 14. Gate Charge 480 I CER = 10mA 470 460 o TJ = -40 C 450 o T J = 25 C 440 o T J = 175 C 430 420 10 100 RG, SERIES GATE RESISTANCE () 1000 6000 Figure 15. Break down Voltage vs. Series Gate Resistance NORMALIZED THERMAL IMPEDANCE, ZJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.5 0.20 PDM 0.10 0.1 0.05 t1 t2 0.02 0.01 SINGLE PULSE 0.01 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 10 10 Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. C1 6 www.fairchildsemi.com FGD3245G2_F085 / FGB3245G2_F085 Test Circuit and Waveforms @2014 Fairchild Semiconductor Corporation FGB3245G2_F085 / FGB3245G2_F085 Rev. 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