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May 2014
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 1
FGD3245G2_F085 / FGB3245G2_F085
EcoSPARK®2 320mJ, 450V, N-Channel Ignition IGBT
Features
SCIS Energy = 320mJ at TJ = 25oC
Logic Level Gate Drive
Low Saturation Voltage
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
General Description
The FGB3245G2_F085 and FGD3245G2 are N-channel
IGBTs designed in Fairchild's EcoSPARK-2 technology
which helps in eliminating external protection circuitry. The
technology is optimized for driving the coil in the harsh
environment of automotive ignition systems and offers out-
standing Vsat and SCIS Energy capability also at elevated
operating temperatures. The logic level gate input is ESD
protected and features an integrated gate resistor. An inte-
grated zener-circuitry clamps the IGBT's collecter- to-emit-
ter voltage at 450V which enables systems requiring a
higher spark voltage
Symbol
Package
D²-Pak
JEDEC TO-263AB
E
G
JEDEC TO-252AA
D-Pak
E
G
GATE
COLLECTOR
EMITTER
R
2
R
1
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 2
Device Maximum Ratings TA = 25°C unless otherwise noted
Package Marking and Ordering Information
Electrical Characteristics TA = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Symbol Parameter Rating Units
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) 450 V
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V
ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 320 mJ
ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 180 mJ
IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 23 A
IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 23 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD
Power Dissipation Total, at TC = 25°C 150 W
Power Dissipation Derating, for TC > 25oC1.1W/
oC
TJOperating Junction Temperature Range -40 to +175 oC
TSTG Storage Junction Temperature Range -40 to +175 oC
TLMax. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC
TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 oC
ESD Electrostatic Discharge Voltage at100pF, 1500Ω 4kV
CDM-Electrostatic Discharge Voltage at 1Ω 2kV
Device Marking Device Package Reel Size Tape Width Quantity
FGD3245G2 FGD3245G2_F085 TO252AA 330mm 16mm 2500 units
FGB3245G2 FGB3245G2_F085 TO263AB 330mm 24mm 800 units
Symbol Parameter Test Conditions Min Typ Max Units
BVCER Collector to Emitter Breakdown Voltage
ICE = 2mA, VGE = 0,
RGE = 1KΩ,
TJ = -40 to 150oC
420 - 480 V
BVCES Collector to Emitter Breakdown Voltage
ICE = 10mA, VGE = 0V,
RGE = 0,
TJ = -40 to 150oC
440 - 500 V
BVECS Emitter to Collector Breakdown Voltage ICE = -75mA, VGE = 0V,
TJ = 25°C 28 - - V
BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V
ICER Collector to Emitter Leakage Current VCE = 250V, RGE = 1KΩ
TJ = 25oC--25μA
TJ = 150oC--1mA
IECS Emitter to Collector Leakage Current VEC = 24V,
TJ = 25oC --1
mA
TJ = 150oC--40
R1Series Gate Resistance - 120 - Ω
R2Gate to Emitter Resistance 10K - 30K Ω
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TJ = 2 5 oC - 1 . 1 3 1 . 2 5 V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TJ = 150oC - 1.32 1.50 V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4 . 5 V, TJ = 150oC - 1.64 1.85 V
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 3
Electrical Characteristics TA = 25°C unless otherwise noted
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Notes:
1: Self Clamping Inductive Switching Energy (ESCIS25) of 320 mJ is based on the test conditions that starting
Tj=25oC; L=3mHy, ISCIS=14.6A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
2: Self Clamping Inductive Switching Energy (ESCIS150) of 180 mJ is based on the test conditions that starting
Tj=150oC; L=3mHy, ISCIS=10.9A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
Symbol Parameter Test Conditions Min Typ Max Units
QG(ON) Gate Charge ICE = 10A, VCE = 12V,
VGE = 5V -23-nC
VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE,
TJ = 25oC 1.3 1.6 2.2 V
TJ = 150oC 0.75 1.1 1.8
VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 1 0 A - 2 . 7 - V
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
VGE = 5V, RG = 1KΩ
TJ = 25oC,
-0.94μs
trR Current Rise Time-Resistive - 2.6 7 μs
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,
VGE = 5V, RG = 1KΩ
ICE = 6.5A, TJ = 25oC,
- 5.4 15 μs
tfL Current Fall Time-Inductive - 2.7 15 μs
ESCIS Self Clamped Inductive Switching L = 3.0 mHy,RG = 1KΩ,
VGE = 5V, (Note 1) TJ = 25°C - - 320 mJ
RθJC Thermal Resistance Junction to Case All packages - - 0.9 oC/W
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 4
Typical Performance Curves
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
1101001000
1
10
100
SCIS Curves valid for Vcl a mp Volt ages of <430V
TJ = 150oC
TJ = 25oC
tCL P, TIME IN CLAMP (μS)
ISCIS
, INDUCTIVE SWITCHING CURRENT (A)
RG = 1KΩ, VGE = 5V, VCE = 100V
Figure 2.
03691215
0
10
20
30
40
SCIS Curves valid f or Vcl a m p Voltages of <430V
TJ
= 150oC
TJ = 25oC
L, INDUCTANCE (mHy)
ISCIS
, INDUCTIVE SWITCHING CURRENT (A)
RG = 1KΩ, VGE = 5V, VCE = 100V
Self Clamped Inductive Switching
Current vs. Inductance
Figure 3.
-50-250 255075100125150175
1.00
1.05
1.10
1.15
1.20 ICE = 6A
VGE
= 8V
VGE = 5V VGE = 4. 5V
VGE = 4 .0 V
VGE
= 3.7V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ
, JUNCTION TEMPERTURE (oC)
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4.
-50 -25 0 25 50 75 100 125 150 175
1.15
1.20
1.25
1.30
1.35
1.40
1.45
ICE = 10A
VGE
= 8V
VGE = 5 V
VGE = 4.5V
VGE = 4 .0 V
VGE = 3.7V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERTURE (oC)
Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 5.
012 34
0
10
20
30
40
TJ = -40oC
VGE
= 4.5V
VGE
= 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
012 34
0
10
20
30
40
TJ = 25oC
VGE
= 4.5V
VGE
= 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 5
Figure 7.
012 34
0
10
20
30
40
TJ
= 175oC
VGE
= 4.5V
VGE
= 5.0V
VGE = 3.7V
VGE = 4.0V
VGE = 8.0V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8.
1.0 1.5 2.0 2.5 3 .0 3.5 4.0 4.5
0
10
20
30
40
TJ = -40oC
TJ = 25o
C
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0. 5% MAX
VCE = 5V
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
Transfer Characteristics
Figure 9.
25 50 75 100 125 150 175
0
10
20
30
ICE, DC C OLLECTOR CURRENT (A)
TC, CASE TEMPERATURE(oC)
VGE = 5.0V
DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
-50 - 25 0 25 50 75 1 00 125 150 17 5
0.8
1.0
1.2
1.4
1.6
1.8
VCE = VGE
ICE = 1mA
VTH , THRESHOLD VOLTAGE (V)
TJ
, JUNCTION TEMPERATURE(oC)
Figure 11.
-50 -25 0 25 5 0 75 1 00 125 150 175
0.1
1
10
100
1000
10000
VCES = 250V
VCES = 300V
VECS = 24V
TJ
, JUNCTION TEMPERATURE (oC)
LEAKAGE CURRENT (μA)
Leakage Current vs. Junction
Temperature
Figure 12.
25 50 75 100 125 150 175
0
2
4
6
8
10
12
Resistive tON
Indu ctive tOFF
SWITCHING TIME (μS)
TJ
, JUNCTION TEMPERATURE (oC)
ICE = 6.5A, VGE
= 5V, RG = 1KΩ
Switching Time vs. Junction
Temperature
Typical Performance Curves (Continued)
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 6
Figure 13.
5 10152025
0
400
800
1200
1600
2000
f = 1MHz
CRES
COES
CIES
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Capacitance vs. Collector to Emitter
Voltage
Figure 14.
0 102030405060
0
2
4
6
8
10
ICE = 10A, IG=1mA, TJ
= 25oC
VCE = 6V
VGS
, GATE TO EMITTER VOLTAGE(V)
Qg, GATE CHARGE(nC)
VCE = 12V
Gate Charge
Figure 15.
10 100 1000 6000
420
430
440
450
460
470
480
TJ = 25oC
TJ = -40oC
TJ = 175oC
ICE R = 10mA
RG, SERIES GATE RESISTANCE (Ω)
BV
CER
, BREAKDOWN VOLTAGE (V)
Break down Voltage vs. Series Gate Resistance
Figure 16.
10-5 10-4 10-3 10-2 10-1 100
0.01
0.1
1
2
0.01
0.02
0. 05
0.10
SI NGLE PUL SE
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING OR DER
0.20
D = 0. 5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves (Continued)
Test Circuit and Waveforms
FGD3245G2_F085 / FGB3245G2_F085
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
www.fairchildsemi.com 7
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