Rugged Power MOSFETs IRF520R, IRF521R, IRF522R, IRF523R Avalanche Energy Rated N-Channel Power MOSFETs 7.0A and 8.0A, 60V-100V ros(On) = 0.30 and 0.400 Features: lf Single pulse avalanche energy rated SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF520R, IRF521R, IRF522R and IRF523R are ad- File Number 1994 N-CHANNEL ENHANCEMENT MODE oO 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE to withstand & specified level of energy in the breakdown DRAIN ~ = bran ifi v i - avalanche mode. of operation. These are n-channel en- (FLANGE) eS --&- pa hancement-mode silicon-gate power field-effect transis- CS tors designed for applications such as switching regulators, t GATE switching converters, motor drivers, relay drivers, and driv- TOP VIEW ers for high-power bipolar switching transistors requiring 9208-39528 high speed and low gate-drive power. These types can be JEDEC TO-220AB operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Parameter I(RF520R IRF521R IRF522R tRF523R Units Vos Drain - Source Voltage 100 60 100 60 Vv Voea Drain - Gate Voltage (Res = 20 KA) @ 100 60 100 60 Vv lp @ Tc = 25C Continuous Drain Current 8.0 8.0 7.0 7.0 A ln @ Tc = 100C Continuous Drain Current 5.0 5.0 4.0 4.0 A lom Pulsed Drain Current @ 32 32 28 28 A Ves Gate - Source Voltage +20 Vv Pp @ Te = 26C Max. Power Dissipation 40 (See Fig. 14) Ww Linear Derating Factor 0.32 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 36 mj Te Seg a otarure ange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-82Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) IRF520R, IRF521R, IRFS22R, IRF523R Parameter Type Min. | Typ. { Max. { Units Test Conditions BVpss Drain - Source Breakdown Voltage IRF520R _ _ = IRF522R | 100 V__| Yes=0v IRF521R _ = IRF523R 60 _ v Ip = 250uA Vesum _ Gate Threshold Voltage ALL 2.0 4.0 Vv. Vos = Vos, lo = 2507 A lass Gate-Source Leakage Forward ALL = = 500 nA Ves = 20V less Gate-Source Leakage Reverse ALL =_ ~500 nA Ves = -20V \pss Zero Gate Voltage Drain Current = - 250 pA Vos = Max. Rating, Ves = OV ALL - | 1000 | A _| Vos = Max. Rating x 0.8, Veg = OV, Te = 125C loiom On-State Drain Current IRF520R | 55 _ _ A IRF521R Vos > toion X Rosiow max, Vas = 10V IRF522R _ iars2gR | 7 | A Rosion Static Drain-Source On-State IRF520R =_ 0.25 0.30 Q Resistance @ Ren Vos = 10V, tp = 4.0A IRF523R _ 0.30 0.40 Q is Forward Transconductance @ ALL 1.5 2.9 = S$) | Vos > loien X Rosionimex, !o = 4.0A Cras Input Capacitance ALL = 450 = pF Vas = OV, Vos = 25V, f = 1.0 MHz Coes Output Capacitance ALL. = 200 = pF See Fig. 10 Cras Reverse Transfer Capacitance ALL ~ 50 = pF toon Turn-On Delay Time ALL = 20 40 ns Voo = 0.5 BVoss, Ip = 4.0A, 20 = 502 t Rise Time ALL = 36 70 ns See Fig. 17 tation Turn-Off Delay Time ALL = 50 100 ns (MOSFET switching times are essentially tr Falt Time ALL =~ 35 70 ns independent of operating temperature.) Qu Total Gate Charge ALL _ 10 18 no | ss = 10V, lo = 10A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qye Gate-Source Charge ALL _ 60 - nC__| essentially independent of operating Q Gate-Drain (Miller) Gharge Au {| | 40 | | nc_| temperature) Lo {internal Drain Inductance _~ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL. _~ 45 nH_ | Measured from the inductances. drain lead, 6mm (0.25 6 in.) trom package to Lo center of die. Ls Internal Source Inductance ALL _ 75 _ nH Measured from the 6 source lead, 6mm us (0.25 in.) from package to source an bonding pad. Thermal Resistance RnJC__ Junction-to-Case ALL _ _ 3.12 | C/W RnCS__Case-to-Sink ALL _ 1.0 - C/W_| Mounting surface flat, smooth, and greased. RuJA Junction-to-Ambient ALL _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF520R _ _ go +A Modified MOSFET symbol {Body Diode) IRF521A . showing the integral o IRF522R A reverse P-N junction rectifier. inrs23R| | ~ | 7% Isa Pulse Source Current (RFS20R} _ 32 A s (Body Diode) @ IRF521R IRF522R vrca-anese tarsean| ~ | ~ | 28 | A Vsp Diode Forward Voltage IRF520R = 9R0 = = IRF521R _~ - 2.5 v Tc = 25C, Is = 8.0A, Ves = OV iRF522R = = = IRF523R _ - 2.3 v Te = 25C, Is = 7.0A, Vas = OV ty Reverse Recovery Time ALL =~ 280 _ ns Ta = 150C, le = 8.0A, dle/dt = 100A/ps Qra Reverse Recovered Charge ALL = 16 _ uc Ts = 150C, Ir = 8.0A, dir/dt = 100A/us fon Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ta = 26C to 150C, Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Voo = 25V, starting T; = 25C, L = 640vH, Ros = 252, boeax = 9.2A. See figures 15, 16. 6-83Rugged Power MOSFETs IRF520R, IRF521R, IRF522R, IRF523R TEST: Vins > 'Dtan) * Jp, DRAIN CURRENT (AMPERES) 4p. DRAIN CURRENT (AMPERES) a 10 20 n 40 El 9 2 4 5 8 10 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics OPERATION IN THIS AREA IS LIMITED 8Y Rpston) = g 3 = 3 z <6 e e =z = @ = 5 3 3 z4 z = a a 5 Te = 25C a a ~ - Ty = 150C MAX 2 Ringe = 3.12 IRF521R, 0 1 2 3 5 19 2 5 10 20 so foo 200 =| S00 Vos. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area . z a z < Ee Ss Ee Ss ee we fu a= 3 gs Z nef 2 tp S80 % 3s 1. DUTY FACTOR, D+ 7. a PULSE s THERMAL IMPEDANCE} 2. PER UNIT BASE = Rinyc = 3.12 DEG. CW 8 3. Tya- To Pom Zenuclt). vs 001 wh 2 5 wt 2 5 ws 2 5 we 2 5 wl 2 5 to 2 5 10 1, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-84Rugged Power MOSFETs IRF520R, IRF521R, IRF522R, IRF523R =. he o S n on Of. TRANSCONDUCTANCE (SIEMENS) Vos > 'Dton) * Aoston} max. 00 ys PULSE TEST lpn, REVERSE DRAIN CURRENT (AMPERES) 4 2506 10 % 4 8 n 16 ri) a 1 2 a a 1p, DRAIN CURRENT (AMPERES) Vgp. SOUACE-TO-DRAIN VOLTAGE (VOLTS! Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 125 22 S w Bos 2 16 md 2 2 z 3 3 = a z ZS 105 Sata en gy 2N PS zs ws ax og BE zz Sz 25 ee Bz 095 zz 10 2 z z 2 g , z ye (088 g 08 8 > 3 ars 02 40 0 40 80 120 160 -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature Ves=4 tf 1MHe Cig * Cys + Cog. Cas SHORTED Coy = Cag Coma = Cog * Vos 20V ku Vs = 50 Vos = 80V, IRF520R, 522R C, CAPACITANCE <pF) Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Ip = 10A FOR TEST CIRCUIT SEE FIGURE 18 0 10 20 20 a 30 9 4 8 2 16 20 Vos. DRAIN-TO-SQUACE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-85Rugged Power MOSFETs JRFS20R, IRFS27R, IRF522R, IRF523R 08 a 2 =z 3 3 Zz 06 a & = a 2 z = os bt w Zz = 04 = IRFS22R, S 3 3 e z eS < z S < Veg = 20V 5 = a Gs oS = & 2 Apsiont PULSE OF 2.0 us DURATION. INITIAL Ty = 25C, (HEATING EFFECT OF 2.0 us IS MINIMAL) 0 0 10 20 30 a0 2B 50 5 100 125 150 ip, ORAIN CURRENT (AMPERES! Tc. CASE TEMPERATURE (C) Fig. 12 ~ Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 40 5 25 VARY tp TO OBTAIN Py, POWER DISSIPATION (WATTS) 3 REQUIRED PEAK I, our + Ros =o 18 Vos 10 i Fo 0.018 10 9208-42699 5 Fig. 15 Unclamped Energy Test Circult 0 20 ae 60 ao 1020180 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve ADIUSTAL OF; TO OBTAIN SPECIFIED tg SR vi PULSE 9 GENERATOR Ow.T. i so > TO SCOPE F7 \ pin ! son HIGH FREQUENCY be de me a od SHUNT s2cs- 42660 nd = Fig. 16 Unclamped Energy Waveforms Fig. 17 Switching Time Test Circuit Vos CURRENT uSOLATED REGULATOR SUPPLY} SAME TYPE + i AS DUT tatreay Out sone 3 Tr l = o3ut buT . | | tSmA 0 ---- AANA Vos Ig 10 CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit