VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors Three Phase Bridge (Power Modules), 25 A to 35 A FEATURES * Universal, 3 way terminals: push-on, wrap around or solder * High thermal conductivity package, electrically insulated case * Center hole fixing * Excellent power/volume ratio * UL E300359 approved * Gold plated terminals solderable using lead (Pb)-free solder; solder alloy Sn/Ag/Cu (SAC305); solder temperature 260 C to 275 C * Designed and qualified for industrial and consumer level * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D-63 PRODUCT SUMMARY IO 25 A to 35 A VRRM 100 V to 1600 V Package D-63 Circuit Three phase bridge DESCRIPTION A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IO IFSM I2t 26MT 36MT UNITS 25 35 A C TC 70 60 50 Hz 360 475 60 Hz 375 500 50 Hz 635 1130 60 Hz 580 1030 A A2s VRRM 100 to 1600 V TJ - 55 to 150 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-26MT.., VS-36MT.. VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 150 20 200 275 40 400 500 60 600 725 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 IRRM MAXIMUM AT TJ MAXIMUM mA 2 Revision: 22-Jan-14 Document Number: 93565 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SYMBOL PARAMETER Maximum DC output current at TC IO t = 8.3 ms IFSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t t = 8.3 ms I2t for fusing t = 10 ms t = 8.3 ms Maximum I2t for fusing 26MT 120 rect. conduction angle t = 10 ms Maximum peak, one-cycle non-repetitive forward current VALUES TEST CONDITIONS I2t No voltage reapplied 100 % VRRM reapplied No voltage reapplied Initial TJ = TJ maximum 100 % VRRM reapplied UNITS 36MT 25 35 A 70 60 C 360 475 375 500 300 400 314 420 635 1130 580 1030 450 800 410 730 I2t for time tx = I2t x tx; 0.1 tx 10 ms, VRRM = 0 V 6360 11 300 Low level of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 0.88 0.86 High level of threshold voltage VF(TO)2 ( I > x IF(AV)), TJ maximum 1.13 1.03 Low level forward slope resistance rt1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 7.9 6.3 High level forward slope resistance rt2 ( I > x IF(AV)), TJ maximum 5.2 5.0 1.26 1.19 A A2s A2s V m Maximum forward voltage drop VFM TJ = 25 C, IFM = 40 Apk - per single junction Maximum DC reverse current IRRM TJ = 25 C, per junction at rated VRRM 100 A RMS isolation voltage VINS TJ = 25 C, all terminal shorted; f = 50 Hz, t = 1 s 2700 V V THERMAL - MECHANICAL SPECIFICATIONS Parameter SYMBOL Maximum junction and storage temperature range VALUES TEST CONDITIONS 26MT TJ, TStg - 55 to 150 Maximum thermal resistance, junction to case RthJC DC operation per bridge (based on total power loss of bridge) 1.42 1.35 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.2 0.2 Bridge to heatsink with screw M4 Instantaneous Forward Current (A) 160 Maximum Allowable Case Temperature (C) 26MT.. Series 140 120 100 + 120 (rect.) ~ 80 - 60 0 5 10 15 20 25 Total Output Current (A) Fig. 1 - Current Ratings Characteristics 30 C K/W Approximate weight Mounting torque 10 % UNITS 36MT 20 g 2.0 Nm 1000 26MT.. Series 100 Per junction 10 TJ = 25 C TJ = 150 C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Revision: 22-Jan-14 Document Number: 93565 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors 55 50 45 10 5 15 10 10 K/W 30 25 20 R - 15 2K /W 3K /W 4K /W 5K /W 7 K/ W 35 W 20 40 K/ 30 25 K/ W 7 0. 120 (rect.) 1 45 = 40 35 50 SA Maximum Total Power Loss (W) 26MT.. Series TJ = 150 C R th Maximum Total Power Loss (W) 55 5 0 0 0 5 10 20 0 25 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 3 - Total Power Loss Characteristics 320 150 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave Forward Current (A) 280 260 240 36MT.. Series Maximum Allowable Case Temperature (C) 300 220 200 180 160 140 120 130 110 90 120 (rect.) + ~ 70 - 100 26MT.. Series 80 50 1 10 0 100 400 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied Peak Half Sine Wave Forward Current (A) 280 240 200 160 120 26MT.. Series 80 0.01 0.1 20 25 30 35 40 1 Pulse Drain Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Current Ratings Characteristics Instantaneous Forward Current (A) Fig. 4 - Maximum Non-Repetitive Surge Current 320 15 Total Output Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 360 10 5 1000 36MT.. Series 100 Per junction 10 TJ = 25 C TJ = 150 C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 22-Jan-14 Document Number: 93565 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors 80 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 80 36MT.. Series TJ = 150 C 70 60 50 120 (rect.) 40 30 20 10 70 R th SA 60 /W 50 0. K/ W 2K 40 - R /W 3K /W 4 K/ W 5 K/W 7 K/W 30 20 10 K/W 10 0 = 7 1K 0 0 5 15 10 20 25 30 35 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (C) Fig. 8 - Total Power Loss Characteristics 500 450 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 450 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 400 300 250 200 400 350 300 250 200 150 150 36MT.. Series 36MT.. Series 100 0.01 100 1 10 100 0.1 1 Pulse Drain Duration (s) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 9 - Maximum Non-Repetitive Surge Current ZthJC - Transient Thermal Impedance (K/W) 10 1 Steady state value: RthJC = 1.42 K/W (DC operation) 0.1 26MT.. Series per bridge 0.01 . 0.001 0.001 . 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics Revision: 22-Jan-14 Document Number: 93565 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-26MT.., VS-36MT.. Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (K/W) 10 Steady state value: RthJC = 1.35 K/W (DC operation) 1 0.1 36MT.. Series per bridge 0.01 . . 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 36 MT 160 1 2 3 4 1 - Vishay Semiconductors product 2 - Current rating code 3 - Basic part number 4 - Voltage code x 10 = VRRM 26 = 25 A (average) 36 = 35 A (average) CIRCUIT CONFIGURATION + ~ - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95251 Revision: 22-Jan-14 Document Number: 93565 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-63 DIMENSIONS in millimeters (inches) 6.35 0.05 (0.25 0.002) 22 1 (0.87 0.004) 10 0.3 (0.39 0.01) 0.8 0.1 (0.03 0.0039) 24 0.5 (0.950 0.02) O5 .2 ( 0.2 0) AC1 28.5 0.15 (1.12 0.006) AC2 16.0 0.3 (0.63 0.012) 24 0.5 (0.950 0.02) AC3 12.25 (0.482) max. Not to scale Revision: 03-Feb-14 Document Number: 95251 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-26MT10 VS-26MT100 VS-26MT120 VS-26MT140 VS-26MT160 VS-26MT20 VS-26MT40 VS-26MT60 VS26MT80 VS-36MT10 VS-36MT100 VS-36MT120 VS-36MT140 VS-36MT160 VS-36MT40 VS-36MT60 VS-36MT80 VS-36MT20 VS-94MT160KPBF VS-54MT120KPBF VS-91MT160KPBF VS-92MT120KPBF VS-94MT80KPBF VS93MT120KPBF VS-92MT160KPBF VS-93MT160KPBF VS-94MT120KPBF VS-91MT80KPBF VS-92MT140KPBF VS-54MT160KPBF VS-54MT80KPBF VS-91MT120KPBF