5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BP 104 F BP 104 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 ... 5 5.08 mm spacing 1.6 1.2 Photosensitive area 2.20 mm x 2.20 mm Approx. weight 0.1 g 1.1 0.9 1.6 1.2 Photosensitive area 2.20 mm x 2.20 mm feo06861 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0...5 0.3 0...0.1 1.2 1.1 Chip position 0.2 0.1 GEO06075 Cathode lead GEO06861 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1997-11-19 BP 104 F BP 104 FS Wesentliche Merkmale Speziell geeignet fur Anwendungen bei 950 nm kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BP 104 FS: geeignet fur Vapor-Phase Loten und IR-Reflow Loten Features Especially suitable for applications of 950 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BP 104 FS: suitable for vapor-phase and IR-reflow soldering Anwendungen Applications IR-Fernsteuerung von Fernseh- und IR remote control of hi-fi and TV sets, Rundfunkgeraten, Videorecordern, Lichtdimmern, Geratefernsteuerungen Lichtschranken fur Gleich- und Wechsellichtbetrieb video tape recorders, dimmers, remote controls of various equipment Photointerrupters Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code BP 104 F (*BP 104 ) Q62702-P84 BP 104 FS Q62702-P1646 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 C Ptot 150 mW Semiconductor Group 2 1997-11-19 BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 S 34 ( 25) A Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 950 nm Spektraler Bereich der Fotoempfindlichkeit 780 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 4.84 mm2 Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area LxB 2.20 x 2.20 mm x mm Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface H 0.5 mm 0.3 (BP 104 FS) Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity S 0.70 A/W Quantenausbeute Quantum yield 0.90 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 ( 250) mV Kurzschlustrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 17 A Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 20 ns Durchlaspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 48 pF Semiconductor Group 3 S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax LxW 1997-11-19 BP 104 F BP 104 FS Kennwerte (TA = 25 C, = 950 nm) Characteristics (cont'd) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6 x 10-14 W Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.1 x 1012 cm * Hz W Semiconductor Group 4 1997-11-19 BP 104 F BP 104 FS Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) OHF00368 100 P S rel % OHF01056 10 3 A Total power dissipation Ptot = f (TA) 10 4 mV VO OHF00958 160 mW Ptot 140 80 10 2 10 3 VO 100 60 10 1 10 2 40 120 P 80 60 10 0 10 1 40 20 20 0 700 800 900 1000 nm 10 -1 10 0 1200 W/cm2 10 2 10 0 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHFD1781 8000 0 0 20 40 60 Ee Dark current IR = f (VR), E = 0 R 10 1 C pA Dark current IR = f (TA), VR = 10 V, E = 0 OHF01778 60 80 C 100 TA OHF00082 10 3 R nA pF 50 10 2 6000 40 10 1 30 4000 20 10 0 2000 10 0 10 0 20 30 V 0 -2 10 40 10 -1 10 0 10 1 V 10 2 VR VR 10 -1 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 5 100 120 1997-11-19