TND308TD Ordering number : EN8150A SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) TND308TD General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Features * * * * * * * Dual buffer. Monolithic structure(High voltage CMOS process adopted). Withstand voltage of 25V is assured. Wide range of operating voltage : 4.5V to 25V. Peak output current : 1A. Fast switching time(30ns typical at 1000pF load). Fully compatible input to TTL/CMOS (VIH=not more than 2.6V, at VDD=4.5 to 25V). Specifications Absolute Maximum Ratings at Ta=25C Parameter Supply Voltage Symbol Conditions Ratings VDD Input Voltage Allowable Power Dissipation Unit 0 to 25 VIN PD max V GND--0.3 to VDD+0.3 V 0.25 W Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Recommended Operating Conditions at Ta=25C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage VDD 4.5 to 25 V Operating Temperature Topr --40 to +125 C Electrical Characteristics (AC Characteristics) at Ta=25C, VDD=18V, VIN=5V Parameter Turn-On Rise Time Turn-Off Fall Time Delay Time Symbol Conditions Ratings min typ Unit max tr tf CL=1000pF CL=1000pF 30 45 30 45 ns ns tD1 tD2 CL=1000pF CL=1000pF 30 45 ns 45 60 ns Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 40506 MS IM TB-00002258 / 22805IP TS IM TB-00000364 No.8150-1/5 TND308TD Electrical Characteristics (DC Characteristics) at Ta=25C, VDD=4.5 to 25V Parameter Symbol Logic "1" Input Voltage VIH Logic "0" Input Voltage VIL Input Bias Current IIN High Level Output Voltage VOH Low Level Output Voltage VOL VDD Supply Current Isupp Output High Short Circuit Pulse Current IO+ Output Low Short Circuit Pulse Current IO-- Output On Resistance ROUT Ratings Conditions min typ Unit max 2.6 VIN=0 or VDD V --1 IO=0 IO=0 0.8 V 1 A 0.1 V VDD--0.1 VDD=10V, VIN=3V, (both inputs) V 1.0 VDD=10V, VIN=0, (both inputs) VDD=18V, PW10s, VOUT=0 VDD=18V, PW10s, VOUT=18V 4.5 mA 0.2 mA 1.0 A 1.0 A VDD=18V, Iload=10mA, VOUT="H" 8 12 VDD=18V, Iload=10mA, VOUT="L" 6 10 0.95 Package Dimensions unit : mm 7006A-006 3.0 0.125 5 1 4 1.0 1 : VDD 2 : INA 3 : GND 4 : INB 5 : NC 6 : OUTB 7 : OUTA 8 : VDD 0.05 6.4 4.5 0.5 8 SANYO : TSSOP8 0.95 0.25 0.425 0.65 Block Diagram VDD IN OUT GND No.8150-2/5 TND308TD Switching Time Test Circuit VDD=18V 4.7F 0.1F TND308TD INPUT A OUTPUT A 1000pF INPUT B OUTPUT B 1000pF INPUT RISE AND FALL +5V TIMES=5ns +0.4V INPUT 90% 10% tD 1 tD 2 +18V NONINVERTING OUTPUT 0V 90% 90% 10% 10% tr tf tr -- Tc VDD=18V VIN=5V CL=1000pF Turn-On Rise Time, tr -- ns 45 40 35 30 25 VIN=5V CL=1000pF 60 40 30 10 0 50 100 Case Temperature, Tc -- C 150 0 5 10 40 35 30 25 25 30 IT05629 VIN=5V CL=1000pF Turn-Off Fall Time, tf -- ns 45 20 tf -- VDD 60 VDD=18V VIN=5V CL=1000pF 15 Supply Voltage, VDD -- V IT05628 tf -- Tc 50 Turn-Off Fall Time, tf -- ns 50 20 20 15 --50 tr -- VDD 70 Turn-On Rise Time, tr -- ns 50 50 40 30 20 20 15 --50 10 0 50 100 Case Temperature, Tc -- C 150 IT05630 0 5 10 15 20 Supply Voltage, VDD -- V 25 30 IT05631 No.8150-3/5 TND308TD tD1 -- Tc 50 40 VIN=5V CL=1000pF 45 Delay Time, tD1 -- ns Delay Time, tD1 -- ns 45 35 30 25 20 tD1 -- VDD 50 VDD=18V VIN=5V CL=1000pF 40 35 30 25 15 10 --50 20 0 50 100 Case Temperature, Tc -- C 0 70 60 50 40 30 15 20 25 30 IT05633 tD2 -- VDD 160 VIN=5V CL=1000pF 140 Delay Time, tD2 -- ns 80 10 Supply Voltage, VDD -- V VDD=18V VIN=5V CL=1000pF 90 5 IT05632 tD2 -- Tc 100 Delay Time, tD2 -- ns 150 120 100 80 60 40 20 20 10 0 --50 0 0 50 100 Case Temperature, Tc -- C 1.2 1.0 0.8 0.6 0 50 100 Case Temperature, Tc -- C 10 150 IT05636 15 20 25 30 IT08459 IO(--) -- Tc 1.4 VDD=18V 0.4 --50 5 Supply Voltage, VDD -- V Output "Low" Short Circuit Pulse Current, IO(--) -- A Output "High" Short Circuit Pulse Current, IO(+) -- A 0 IT05634 IO(+) -- Tc 1.4 VDD=18V 1.2 1.0 0.8 0.6 0.4 --50 0 50 100 Case Temperature, Tc -- C 150 IT05637 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W 150 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07154 No.8150-4/5 TND308TD Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.8150-5/5