TND308TD - ON Semiconductor L.L.C.

TND308TD

No.8150-1/5

Features

•Dual buffer.

•Monolithic structure(High voltage CMOS process adopted).

•Withstand voltage of 25V is assured.

•Wide range of operating voltage : 4.5V to 25V.

•Peak output current : 1A.

•Fast switching time(30ns typical at 1000pF load).

•Fully compatible input to TTL/CMOS (VIH=not more than 2.6V, at VDD=4.5 to 25V).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Supply Voltage VDD 0 to 25 V

Input Voltage VIN GND--0.3 to VDD+0.3 V

Allowable Power Dissipation PD max 0.25 W

Junction Temperature Tj --55 to +150 °C

Storage Temperature Tstg --55 to +150 °C

Recommended Operating Conditions at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Operating Supply Voltage VDD 4.5 to 25 V

Operating Temperature Topr --40 to +125 °C

Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD=18V, VIN=5V

Ratings

Parameter Symbol Conditions min typ max Unit

Turn-On Rise Time trCL=1000pF 30 45 ns

Turn-Off Fall Time tfCL=1000pF 30 45 ns

Delay T ime tD1C

L=1000pF 30 45 ns

tD2C

L=1000pF 45 60 ns

71206 / 40506 MS IM TB-00002258 / 22805IP TS IM TB-00000364

TND308TD

ExPD (Excellent Power Device)

General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,

Switching Power Supply, and DC / DC Converter Applications

Ordering number : EN8150A

SANYO Semiconductors

DATA SHEET

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

TND308TD

No.8150-2/5

Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD=4.5 to 25V

Ratings

Parameter Symbol Conditions min typ max Unit

Logic “1” Input Voltage VIH 2.6 V

Logic “0” Input Voltage VIL 0.8 V

Input Bias Current IIN VIN=0 or VDD --1 1 µA

High Level Output Voltage VOH IO=0 VDD--0.1 V

Low Level Output Voltage VOL IO=0 0.1 V

VDD Supply Current Isupp VDD=10V, VIN=3V, (both inputs) 1.0 4.5 mA

VDD=10V, VIN=0, (both inputs) 0.2 mA

Output High Short Circuit Pulse Current IO+V

DD=18V, PW≤10µs, VOUT=0 1.0 A

Output Low Short Circuit Pulse Current IO-- VDD=18V, PW ≤10µs, VOUT=18V 1.0 A

Output On Resistance ROUT VDD=18V, Iload=10mA, VOUT=“H” 8 12 Ω

VDD=18V, Iload=10mA, VOUT=“L” 6 10 Ω

Package Dimensions

unit : mm

7006A-006

Block Diagram

1 : VDD

2 : INA

3 : GND

4 : INB

5 : NC

6 : OUTB

7 : OUTA

8 : VDD

SANYO : TSSOP8

6.4

3.0

0.65

4.5 0.95

0.95

0.5

0.125

0.25

0.425

0.05 1.0

VDD

IN OUT

GND

TND308TD

No.8150-3/5

Switching Time Test Circuit

90%

INPUT

INPUT RISE

AND FALL

TIMES=5ns

NONINVERTING

OUTPUT

90%90%

10%

+5V

+0.4V

+18V

0.1µF

OUTPUT A

1000pF

OUTPUT B

INPUT A

INPUT B

4.7µF

trtf

tD1tD2

VDD=18V

TND308TD

0 5 10 15 20 25 30

--50 0 50 100 150

IT05628

tr -- Tc

Case Temperature, Tc -- °C

Turn-On Rise Time, tr -- ns

0 5 10 15 20 25 30

IT05629

Supply Voltage, VDD -- V

Turn-On Rise Time, tr -- ns

VDD=18V

VIN=5V

CL=1000pF

VIN=5V

CL=1000pF

tr -- VDD

IT05630

tf -- Tc

Case Temperature, Tc -- °C

Turn-Off Fall Time, tf -- ns

IT05631

Supply Voltage, VDD -- V

Turn-Off Fall Time, tf -- ns

VDD=18V

VIN=5V

CL=1000pF

VIN=5V

CL=1000pF

tf -- VDD

--50 0 50 100 150

TND308TD

No.8150-4/5

0.4

0.6

0.8

1.0

1.2

1.4

--50 0 50 100 150

IT05637

IO(--) -- Tc

Case Temperature, Tc -- °C

VDD=18V

0.4

0.6

0.8

1.0

1.2

1.4

--50 0 50 100 150

IT05636

Case Temperature, Tc -- °C

IO(+) -- Tc

VDD=18V

00 20 40 60 80 100 120 140 160

0.05

0.10

0.15

0.20

0.25

0.30

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

IT07154

0 5 10 15 20 25 30

100

--50 0 50 100 150

IT05632

tD1 -- Tc

Case Temperature, Tc -- °C

Delay T ime, tD1 -- ns

IT05633

Supply Voltage, VDD -- V

Delay T ime, tD1 -- ns

VDD=18V

VIN=5V

CL=1000pF

VIN=5V

CL=1000pF

tD1 -- VDD

IT05634

tD2 -- Tc

Case Temperature, Tc -- °C

Delay T ime, tD2 -- ns

VDD=18V

VIN=5V

CL=1000pF

Output "High" Short Circuit

Pulse Current, IO(+) -- A

Output "Low" Short Circuit

Pulse Current, IO(--) -- A

tD2 -- VDD

Delay T ime, tD2 -- ns

Supply Voltage, VDD -- V

100

120

160

140

0 5 10 15 20 25 30

IT08459

VIN=5V

CL=1000pF

TND308TD

No.8150-5/5PS

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of April, 2006. Specifications and information herein are subject

to change without notice.