Freescale Semiconductor Technical Data Document Number: MRFE8VP8600H Rev. 0, 7/2015 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use in both analog and digital TV transmitters. DBV--T Broadband Class AB Performance: VDD = 50 Vdc, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Signal Type Pout (W) f (MHz) Gps (dB) D (%) Output PAR (dB) DVB--T (8k OFDM) 140 Avg. 474 20.2 29.7 8.9 610 20.7 34.5 8.2 810 20.0 34.0 8.4 MRFE8VP8600H 470-860 MHz, 140 W AVG., 50 V RF POWER LDMOS TRANSISTOR Load Mismatch/Ruggedness Frequency (MHz) 860 Signal Type VSWR DVB--T (8k OFDM) 20:1 at all Phase Angles Pout (W) Test Voltage 125 (3 dB Overdrive) 50 Result No Device Degradation NI--1230H-4S Features Excellent Thermal Characteristics High Gain for Reduced PA Size High Efficiency for Class AB and Doherty Operations Integrated Input Matching. Unmatched Output. Extended Negative Gate--Source Voltage Range of -6.0 Vdc to +10 Vdc Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRFE8VP8600H 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -0.5, +115 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature Range TC -40 to +150 C Operating Junction Temperature Range (1) TJ -40 to +225 C Total Device Dissipation @ TC = 25C Derate above 25C PD 1250 6.25 W W/C Symbol Value (2,3) Unit RJC 0.16 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 99C, 125 W DVB--T (8k OFDM), 50 Vdc, IDQ = 1400 mA, 860 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS -- -- 1 Adc 115 118 -- Vdc Off Characteristics (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS -- -- 5 Adc Zero Gate Voltage Drain Leakage Current (VDS = 115 Vdc, VGS = 0 Vdc) IDSS -- -- 20 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 925 Adc) VGS(th) 1.3 2.1 2.3 Vdc Gate Quiescent Voltage (5) (VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGS(Q) 1.8 2.4 2.8 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2.8 Adc) VDS(on) 0.1 0.3 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 17 Adc) gfs -- 19.4 -- S Reverse Transfer Capacitance (6) (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.62 -- pF Output Capacitance (6) (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 71.2 -- pF Input Capacitance (7) (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss -- 452 -- pF On Characteristics Dynamic Characteristics (4) 1. 2. 3. 4. 5. 6. 7. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. Measurement made with device in push--pull configuration. Part internally input matched. Die capacitance value without internal matching. (continued) MRFE8VP8600H 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ 4 MHz Offset with an Integration Bandwidth of 4 kHz. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps 20.6 21.0 23.6 dB D 28.0 30.0 -- % ACPR -- -61.0 -59.4 dBc IRL -- -12 -9 dB Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz, DVB--T (8k OFDM) Single Channel. Output Peak--to--Average Ratio @ 0.01% Probability on CCDF, Pout = 125 W Avg. Load Mismatch VSWR 20:1 at all Phase Angles, 3 dB Overdrive from Rated Pout (125 W Avg.) PAR -- 7.8 -- dB No Degradation in Output Power Table 5. Ordering Information Device MRFE8VP8600R5 Tape and Reel Information R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel Package NI--1230H--4S 1. Measurement made with device in push--pull configuration. MRFE8VP8600H RF Device Data Freescale Semiconductor, Inc. 3 C1 C2 C18 C17 R1 C16 C13* COAX1 COAX3 C15 C24* C3* C5* C8 C9 C19* C21* L1 CUT OUT AREA C7 C4* C10* C6* COAX2 C14* C22* C26* C28* C27* C29 COAX4 C30 MRFE8VP8600H Rev. 0 C11 C12 C20* C25* C23* C31 R2 C32 D63637 *C3, C4, C5, C6, C10, C13, C14, C19, C20, C21, C22, C23, C24, C25, C26, C27, and C28 are mounted vertically. Figure 2. MRFE8VP8600H Test Circuit Component Layout -- 860 MHz, DVB--T (8k OFDM) Table 6. MRFE8VP8600H Test Circuit Component Designations and Values -- 860 MHz, DVB--T (8k OFDM) Part Description Part Number Manufacturer C1, C11 10 F Chip Capacitors GRM32ER61H106KA12L Murata C2, C12 2.2 F Chip Capacitors C3225X7R1H225K250AB TDK C3, C4, C5, C6 30 pF Chip Capacitors ATC100B300JT500XT ATC C7, C8 24 pF Chip Capacitors ATC100B240JT500XT ATC C9 0.8-8.0 pF Variable Capacitor 27291SL Johanson Components C10 12 pF Chip Capacitor ATC100B120JT500XT ATC C13, C14 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C15, C29 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK C16, C25, C26, C28, C30 100 pF Chip Capacitors ATC100B101JT500XT ATC C17, C31 4.7 F Chip Capacitors C575X7R2A475K230KA TDK C18, C32 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C19 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C20 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC C21 3.0 pF Chip Capacitor ATC100B3R0BT500XT ATC C22 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC C23 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C24, C27 1000 pF Chip Capacitors ATC100B102JT50XT ATC Coax1, 2 25 Semi Rigid Coax, 2.0 Shield Length UT--141C--25 Micro--Coax Coax3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro--Coax L1 2.5 nH, 1 Turn Inductor A01TKLC Coilcraft R1, R2 10 , 1/4 W Chip Resistors CRCW120610R0JNEA Vishay PCB Rogers RO4350B, 0.030, r = 3.66 D63637 MTL MRFE8VP8600H 4 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 Z2 RF Device Data Freescale Semiconductor, Inc. Z7 Z6 C8 C7 VBIAS Z9 L1 Z8 C12 C2 R2 Z13 C10 Z12 Z21 Z19 Z15 Z14 Z18 C14 Z17 Z16 C13 DUT Z49 Z47 Z23 Z22 Z46 Z48 C29 Z25 Z24 C15 Z28 Z51 Z29 C19 C30 Z27 Z26 C16 Z50 0.065 0.400 Microstrip 0.208 0.850 Microstrip 0.242 0.960 Microstrip Z12, Z13 Z14, Z15 Z16, Z17 *Line length includes microstrip bends 0.341 0.400 Microstrip 0.083 0.400 Microstrip Z6, Z7 Z10, Z11 0.019 0.100 Microstrip Z5 Z8, Z9 0.220 0.060 Microstrip 0.410 0.062 Microstrip Z3, Z4 0.245 0.080 Microstrip Z2 Description 0.204 0.062 Microstrip Z1 Microstrip C31 Z31 C20 Z30 C17 C22 Z35 C21 Z33 C32 VSUPPLY Z34 Z32 C18 VSUPPLY Z37 Z39 C23 Z36 Z38 Z36, Z37 Z34, Z35 Z32, Z33 Z30, Z31 Z28, Z29 Z26, Z27 Z24, Z25 Z22, Z23 Z20*, Z21* Z18, Z19 Microstrip 0.074 0.420 Microstrip 0.072 0.420 Microstrip 0.275 0.420 Microstrip 0.072 0.420 Microstrip 0.072 0.420 Microstrip 0.015 0.420 Microstrip 0.186 0.520 Microstrip 0.164 0.520 Microstrip 1.026 0.080 Microstrip 0.115 0.080 Microstrip Description Z50, Z51 Z48*, Z49* Z46, Z47 Z45 Z44 Z43 Z42 Z41 Z40 Z38, Z39 Microstrip COAX4 C27 Z42 C26 Z41 C25 Z40 C24 COAX3 0.371 0.080 Microstrip 0.297 0.080 Microstrip 0.358 0.080 Microstrip 0.204 0.062 Microstrip 0.018 0.080 Microstrip 0.070 0.080 Microstrip 0.280 0.060 Microstrip 0.155 0.060 Microstrip 0.389 0.060 Microstrip 0.211 0.100 Microstrip Description Figure 3. MRFE8VP8600H Test Circuit Schematic -- 860 MHz DVB--T (8k OFDM) C11 Z11 C9 Z10 C1 Z20 + Table 7. MRFE8VP8600H Test Circuit Schematic -- 860 MHz DVB--T (8k OFDM) COAX2 C6 Z5 C5 C4 C3 Z3 Z4 COAX1 VBIAS R1 + MRFE8VP8600H 5 C28 Z43 RF Z44 Z45 OUTPUT 7 6 VDD = 50 Vdc 40 Vdc 30 Vdc 20 Vdc 5 4 3 2 1 25 50 75 0 2.1 100 2.2 2.3 2.5 2.4 2.6 2.7 2.8 TC, CASE TEMPERATURE (C) VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 4. Normalized VGS versus Quiescent Current and Case Temperature Figure 5. Drain Current versus Gate--Source Voltage 1000 66 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Coss 100 P3dB = 59.6 dBm (917 W) 64 10 P2dB = 59.4 dBm (865 W) 62 P1dB = 59.0 dBm (799 W) 60 Actual 58 56 54 VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz Pulse Width = 100 sec, Duty Cycle = 10% 52 Crss 1 Ideal 50 0 10 20 30 40 30 50 31 32 33 34 35 36 37 38 39 40 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) Note: Each side of device measured separately. Figure 7. Pulse CW Output Power versus Input Power Figure 6. Capacitance versus Drain--Source Voltage 24 VDD = 50 Vdc, IDQ = 1400 mA f = 860 MHz Pulse Width = 100 sec Duty Cycle = 10% Gps, POWER GAIN (dB) 23 41 70 60 Gps 50 22 D 21 40 20 30 D, DRAIN EFFICIENCY (%) C, CAPACITANCE (pF) 8 VDD = 50 Vdc IDD, DRAIN CURRENT (AMPS) 1.08 1.07 IDS(Q) = 100 mA 1.06 1.05 1400 mA 1.04 1.03 1.02 1900 mA 1.01 1 2400 mA 0.99 0.98 0.97 0.96 0.95 0.94 0.93 --50 --25 0 Pout, OUTPUT POWER (dBm) NORMALIZED VGS(Q) TYPICAL CHARACTERISTICS -- 860 MHz 20 1000 19 100 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulse Power Gain and Drain Efficiency versus Output Power MRFE8VP8600H 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS -- DVB--T (8k OFDM) 100 10 PROBABILITY (%) 1 0.1 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols 0.01 0.001 0.0001 2 0 4 6 8 10 12 PEAK--TO--AVERAGE (dB) Figure 9. Source Peak--to--Average DVB--T (8k OFDM) --20 7.61 MHz --30 --40 --50 4 kHz BW 4 kHz BW (dB) --60 ACPR Measured at 4 MHz Offset from Center Frequency --70 --80 --90 DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols --100 --110 --5 --4 --3 --2 --1 0 1 2 3 4 5 f, FREQUENCY (MHz) Figure 10. DVB--T (8k OFDM) Spectrum MRFE8VP8600H RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS 109 VDD = 50 Vdc MTTF (HOURS) 108 ID = 6.56 Amps 107 8.18 Amps 9.88 Amps 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf/calculators. Figure 11. MTTF versus Junction Temperature -- CW f MHz Zsource Zload 860 0.85 - j0.90 4.0 + j1.1 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network 50 + Z load Figure 12. Series Equivalent Source and Load Impedance MRFE8VP8600H 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRFE8VP8600H RF Device Data Freescale Semiconductor, Inc. 9 MRFE8VP8600H 10 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2015 Description Initial Release of Data Sheet MRFE8VP8600H RF Device Data Freescale Semiconductor, Inc. 11 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MRFE8VP8600H Document Number: MRFE8VP8600H Rev. 0, 7/2015 12 RF Device Data Freescale Semiconductor, Inc.