MRFE8VP8600H
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This high power transistor is designed for use in UHF TV broadcast
applications. The device has an integrated input matching network for better
power distribution and is ideal for use in both analog and digital TV
transmitters.
DBV--T Broadband Class AB Performance: VDD =50Vdc,I
DQ = 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output
PAR
(dB)
DVB--T (8k OFDM) 140 Avg. 474 20.2 29.7 8.9
610 20.7 34.5 8.2
810 20.0 34.0 8.4
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pout
(W)
Test
Voltage Result
860 DVB--T
(8k OFDM)
20:1 at all
Phase Angles
125
(3 dB
Overdrive)
50 No Device
Degradation
Features
Excellent Thermal Characteristics
High Gain for Reduced PA Size
High Efficiency for Class AB and Doherty Operations
Integrated Input Matching. Unmatched Output.
Extended Negative Gate--Source Voltage Range of –6.0 Vdc to +10 Vdc
Document Number: MRFE8VP8600H
Rev. 0, 7/2015
Freescale Semiconductor
Technical Data
470–860 MHz, 140 W AVG., 50 V
RF POWER LDMOS TRANSISTOR
MRFE8VP8600H
NI--1230H–4S
Figure 1. Pin Connections
(Top View)
Drain A
31
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistors.
Freescale Semiconductor, Inc., 2015. All rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +115 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1) TJ–40 to +225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD1250
6.25
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 99C, 125 W DVB--T (8k OFDM), 50 Vdc, IDQ = 1400 mA, 860 MHz
RJC 0.16 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=10Adc)
V(BR)DSS 115 118 —Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =115Vdc,V
GS =0Vdc)
IDSS — — 20 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 925 Adc)
VGS(th) 1.3 2.1 2.3 Vdc
Gate Quiescent Voltage (5)
(VDD =50Vdc,I
D= 1400 mAdc, Measured in Functional Test)
VGS(Q) 1.8 2.4 2.8 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=2.8Adc)
VDS(on) 0.1 0.3 0.5 Vdc
Forward Transconductance
(VDS =10Vdc,I
D=17Adc)
gfs —19.4 —S
Dynamic Characteristics (4)
Reverse Transfer Capacitance (6)
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.62 —pF
Output Capacitance (6)
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —71.2 —pF
Input Capacitance (7)
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —452 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching. (continued)
MRFE8VP8600H
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ 4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain Gps 20.6 21.0 23.6 dB
Drain Efficiency D28.0 30.0 — %
Adjacent Channel Power Ratio ACPR —–61.0 –59.4 dBc
Input Return Loss IRL — –12 –9 dB
Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 1400 mA, f = 860 MHz,
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
Pout = 125 W Avg.
PAR —7.8 —dB
Load Mismatch
VSWR 20:1 at all Phase Angles, 3 dB Overdrive from
Rated Pout (125 W Avg.)
No Degradation in Output Power
Table 5. Ordering Information
Device Tape and Reel Information Package
MRFE8VP8600R5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--1230H--4S
1. Measurement made with device in push--pull configuration.
4
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
Figure 2. MRFE8VP8600H Test Circuit Component Layout — 860 MHz, DVB--T (8k OFDM)
*C3, C4, C5, C6, C10, C13, C14, C19, C20, C21, C22, C23, C24, C25, C26, C27, and C28 are mounted vertically.
MRFE8VP8600H
Rev. 0
CUT OUT AREA
COAX1
COAX2
C1
COAX3
COAX4
D63637
C2 R1
C13*
C3*
C4*
C5*
C6*
C7
C8
L1
C9
C10*
C11 C12 R2
C14*
C32
C31
C29
C30
C26*
C27* C28*
C24*
C25*
C19*
C20*
C21*
C22*
C23*
C15
C16
C17 C18
Table 6. MRFE8VP8600H Test Circuit Component Designations and Values — 860 MHz, DVB--T (8k OFDM)
Part Description Part Number Manufacturer
C1, C11 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C2, C12 2.2 F Chip Capacitors C3225X7R1H225K250AB TDK
C3, C4, C5, C6 30 pF Chip Capacitors ATC100B300JT500XT ATC
C7, C8 24 pF Chip Capacitors ATC100B240JT500XT ATC
C9 0.8–8.0 pF Variable Capacitor 27291SL Johanson Components
C10 12 pF Chip Capacitor ATC100B120JT500XT ATC
C13, C14 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC
C15, C29 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK
C16, C25, C26, C28, C30 100 pF Chip Capacitors ATC100B101JT500XT ATC
C17, C31 4.7 F Chip Capacitors C575X7R2A475K230KA TDK
C18, C32 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C19 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC
C20 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC
C21 3.0 pF Chip Capacitor ATC100B3R0BT500XT ATC
C22 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
C23 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C24, C27 1000 pF Chip Capacitors ATC100B102JT50XT ATC
Coax1, 2 25 Semi Rigid Coax, 2.0Shield Length UT--141C--25 Micro--Coax
Coax3, 4 25 Semi Rigid Coax, 2.2Shield Length UT--141C--25 Micro--Coax
L1 2.5 nH, 1 Turn Inductor A01TKLC Coilcraft
R1, R2 10 , 1/4 W Chip Resistors CRCW120610R0JNEA Vishay
PCB Rogers RO4350B, 0.030,r=3.66 D63637 MTL
MRFE8VP8600H
5
RF Device Data
Freescale Semiconductor, Inc.
+
RF
INPUT Z1 Z2
Z6
C8
Z7
COAX1
COAX2
Z8
C7
Z9
Z10
Z11
Z12
Z13
C9 C10
VBIAS
C1 C2
R1
Z18
Z14
Z15
DUT
Z22
Z23
Z24
Z25
Z26 Z30
Z27 Z31
C19
C18
Z43
RF
OUTPUT
VSUPPLY
Table 7. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB--T (8k OFDM)
DescriptionMicrostripDescriptionMicrostripDescriptionMicrostrip
Z1 0.2040.062Microstrip
Z2 0.2450.080Microstrip
Z3, Z4 0.2200.060Microstrip
Z5 0.4100.062Microstrip
Z6, Z7 0.0190.100Microstrip
Z8, Z9 0.3410.400Microstrip
Z10, Z11 0.0830.400Microstrip
Z12, Z13 0.0650.400Microstrip
Z14, Z15 0.2080.850Microstrip
Z16, Z17 0.2420.960Microstrip
*Line length includes microstrip bends
Figure 3. MRFE8VP8600H Test Circuit Schematic — 860 MHz DVB--T (8k OFDM)
Z18, Z19 0.1150.080Microstrip
Z20*, Z21* 1.0260.080Microstrip
Z22, Z23 0.1640.520Microstrip
Z24, Z25 0.1860.520Microstrip
Z26, Z27 0.0150.420Microstrip
Z28, Z29 0.0720.420Microstrip
Z30, Z31 0.0720.420Microstrip
Z32, Z33 0.2750.420Microstrip
Z34, Z35 0.0720.420Microstrip
Z36, Z37 0.0740.420Microstrip
Z38, Z39 0.2110.100Microstrip
Z40 0.3890.060Microstrip
Z41 0.1550.060Microstrip
Z42 0.2800.060Microstrip
Z43 0.0700.080Microstrip
Z44 0.0180.080Microstrip
Z45 0.2040.062Microstrip
Z46, Z47 0.3580.080Microstrip
Z48*, Z49* 0.2970.080Microstrip
Z50, Z51 0.3710.080Microstrip
Z5
C5
C6
Z3
C4
C3
Z4
L1
C13
Z20
Z16
Z17
VBIAS
C11 C12
R2
Z19
C14
Z21
Z46
C15
C16
Z50
C17
+
C32
VSUPPLY
Z47
C29
C30
Z51
C31
Z48
Z49
Z28
Z29
C20 C21
Z32
Z33
C22
Z34
Z35
C23
Z36
Z37
Z38
Z39
COAX3
COAX4
Z41
C27
Z40
C24
C25
C26
Z42
C28
Z44 Z45
6
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
TYPICAL CHARACTERISTICS — 860 MHz
P3dB = 59.6 dBm (917 W)
Actual
Ideal
P2dB = 59.4 dBm (865 W)
VDD =50Vdc,I
DQ = 1400 mA, f = 860 MHz
Pulse Width = 100 sec, Duty Cycle = 10%
P1dB = 59.0 dBm (799 W)
IDS(Q) = 100 mA
Figure 4. Normalized VGS versus Quiescent
Current and Case Temperature
NORMALIZED VGS(Q)
2.8
0
8
2.1 2.3
2.2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 5. Drain Current versus Gate--Source Voltage
2.4
4
VDD =50Vdc
TC, CASE TEMPERATURE (C)
1.08
1.07
1.06
1.04
1.03
1.05
1.02
1.01
1
0.99
0.98
0.97
0.93
100-- 5 0 0--25 25 50 75
1400 mA
1900 mA
2400 mA
VDD =50Vdc 7
6
5
2
3
1
2.62.5 2.7
IDD, DRAIN CURRENT (AMPS)
40 Vdc
30 Vdc
20 Vdc
50
1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
100
10
40
Coss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
Note: Each side of device measured separately.
Crss
50
66
32
62
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
60
58
36 37 38 39 40 41
Pout, OUTPUT POWER (dBm)
56
54
34 3533
52
Figure 8. Pulse Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
Gps, POWER GAIN (dB)
19
24
100
21
23
22
1000
D
Gps
20
VDD =50Vdc,I
DQ = 1400 mA
f = 860 MHz
Pulse Width = 100 sec
Duty Cycle = 10%
20
70
50
40
30
D, DRAIN EFFICIENCY (%)
0.96
0.95
0.94
64
30 31
60
MRFE8VP8600H
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
12
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. Source Peak--to--Average DVB--T (8k OFDM)
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
5
-- 2 0
-- 5
7.61 MHz
f, FREQUENCY (MHz)
Figure 10. DVB--T (8k OFDM) Spectrum
-- 3 0
-- 4 0
-- 5 0
-- 9 0
-- 7 0
-- 8 0
--100
-- 11 0
-- 6 0
-- 4 -- 3 -- 2 -- 1 0 1 2 3 4
4kHzBW
(dB)
10
ACPR Measured at 4 MHz Offset
from Center Frequency
4kHzBW
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
8
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 11. MTTF versus Junction Temperature -- CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf/calculators.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
VDD =50Vdc
ID=6.56Amps
8.18 Amps
9.88 Amps
f
MHz
Zsource
Zload
860 0.85 – j0.90 4.0 + j1.1
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured
from drain to drain, balanced configuration.
Figure 12. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
50
50
MRFE8VP8600H
9
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
MRFE8VP8600H
11
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0July 2015 Initial Release of Data Sheet
12
RF Device Data
Freescale Semiconductor, Inc.
MRFE8VP8600H
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E2015 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: MRFE8VP8600H
Rev. 0, 7/2015