SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 5 - AUGUST 2003
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
*V
CEO = 300V
* Very low saturation voltage
*Excellent h
FE specified up to 3 Amps
PARTM A RK ING DE TA I L - FZT8 57
COMPLEM E NTARY TYPE - FZT957
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 350 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6V
Peak Pulse Current ICM 5A
Continuous C ollector Current IC3.5 A
Power Diss ipation at Tamb=25°C Ptot 3W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
*The power whic h can be dissipated assuming the device is mounted in a typical manner o n a
P.C.B. with copp er eq ua l to 2 inche s squa re.
FZT857
C
C
E
B
ELECTRICAL CH ARA CTERISTI CS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO 350 475 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CER 350 475 V IC=1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage V(BR)CEO 300 350 V IC=10mA*
Emitter-Base B reakdown
Voltage V(BR)EBO 68 VIE=100µA
Collector Cut-Off Current ICBO 50
1nA
µAVCB=300V
VCB=300V,
Tamb
=100°C
Collector Cut-Off Current ICER
R ≤1kΩ
50
1nA
µAVCB=300V
VCB=300V,
Tamb
=100°C
Emitter Cut-Off Current IEBO 10 nA VEB=6V
Collector-Emitter
Saturation Voltage VCE(sat) 100
155
230
345
mV
mV
mV
mV
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3.5A, IB=600mA*
Base-Emitter
Saturation Voltage VBE(sat) 1250 mV IC=3.5A, IB=600mA*
Base-Emitter
Turn-On Voltage VBE(on) 1.12 V IC=3.5A, VCE=10V*
Static Forward
Current Transfer
Ratio
hFE 100
100
15
200
200
25
15
300 IC=10mA, V CE=5V
IC=500mA, V CE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
Transition Freq uency fT80 MHz IC==100mA, VCE=10V
f=50MHz
Output Capacitanc e Cobo 11 pF VCB=20V, f=1MHz
Switching Times ton
toff
100
5300 ns
ns IC=250mA, IB1=25mA
IB2=25mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT857
FZT857
0.001 0.01 0.1 1
0.4
0
0.8
TYPI CAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
0.001 0.01 0.1 1
1.0
0.5
2.0
1.5
IC - Collector Current (Amps )
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.6
0.2
0.01 0.1 110
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
300
200
100
h
FE
- Typical Gain
0
10
VCE=2V
100.00010.001 0.01 0.1 1
1.0
0.5
2.0
1.5
100.0001
VCE=5V
IC/IB=10
IC/IB=50
VCE=10V
IC/IB=50
IC/IB=10
I
C
- Collector Current (A)
Safe Operating Area
Single Pulse Test Tamb=25 °C
0.1
1
110100
VCE - Collector Voltage (V)
10
DC
10ms
1ms
100µs
100ms
1s
0.01 1000
