ELECTRICAL CH ARA CTERISTI CS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO 350 475 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CER 350 475 V IC=1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage V(BR)CEO 300 350 V IC=10mA*
Emitter-Base B reakdown
Voltage V(BR)EBO 68 VIE=100µA
Collector Cut-Off Current ICBO 50
1nA
µAVCB=300V
VCB=300V,
Tamb
=100°C
Collector Cut-Off Current ICER
R ≤1kΩ
50
1nA
µAVCB=300V
VCB=300V,
Tamb
=100°C
Emitter Cut-Off Current IEBO 10 nA VEB=6V
Collector-Emitter
Saturation Voltage VCE(sat) 100
155
230
345
mV
mV
mV
mV
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3.5A, IB=600mA*
Base-Emitter
Saturation Voltage VBE(sat) 1250 mV IC=3.5A, IB=600mA*
Base-Emitter
Turn-On Voltage VBE(on) 1.12 V IC=3.5A, VCE=10V*
Static Forward
Current Transfer
Ratio
hFE 100
100
15
200
200
25
15
300 IC=10mA, V CE=5V
IC=500mA, V CE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
Transition Freq uency fT80 MHz IC==100mA, VCE=10V
f=50MHz
Output Capacitanc e Cobo 11 pF VCB=20V, f=1MHz
Switching Times ton
toff
100
5300 ns
ns IC=250mA, IB1=25mA
IB2=25mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT857