SILICON PNP TRANSISTOR
2N3963
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Unit
V(BR)CBO Collector-Base
Breakdown Voltage IC = -10µA -80 V
V(BR)CEO Collector-Emitter
Breakdown Voltage IC = -5mA -80 V
V(BR)CES Collector-Emitter
Breakdown Voltage IC = -10µA -80 V
V(BR)EBO Emitter - Base
Breakdown Voltage IE = -10µA -6 V
ICBO Collector Cut-Off Current VCB = -70V -10
ICES Collector Cut-Off Current VCE = -70V -10
IEBO Emitter Cut-Off Current VEB = -4V -10
nA
IC = -10µA VCE = -5V 100 300
-55°C 40
IC = -100µA VCE = -5V 100
IC = -1.0mA VCE = -5V 100 450
100°C 600
IC = -50mA
(1)
VCE = -5V 90
hFE DC Current Gain
-55°C 45
IC = -10mA IB = -0.5mA -0.25
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage IC = -50mA IB = -5.0mA -0.4
IC = -10mA IB = -0.5mA -0.9
VBE(sat)
(1)
Base-Emitter
Saturation Voltage IC = -50mA IB = -5.0mA -0.95
V
DYNAMIC CHARACTERISTICS
IC = 1.0mA VCE = -5.0V
hfe Small-Signal Current Gain f = 1.0KHz 100 550
IC = -0.5mA VCE = -5.0V
|hfe|
Magnitude of Forward Current
Transfer Ratio,
Common-Emitter f = 20MHz 2.0 8.0
Cobo Output Capacitance VCB = -5.0V f = 1.0MHz 6 pF
Cibo Input Capacitance VEB = -0.5V f = 1.0MHz 15 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%